scholarly journals Optical study of good quality InGaP/GaAs quantum wells: Influence of the indium content around the lattice‐matched composition

1996 ◽  
Vol 68 (15) ◽  
pp. 2111-2113 ◽  
Author(s):  
Juan Martínez‐Pastor ◽  
Luisa González ◽  
Philippe Roussignol
Keyword(s):  
Quantum Wells ◽  
Indium Content ◽  
Optical Study ◽  
Lattice Matched

Strained Quantum Wells for P-channel InGaAs CMOS

2008 ◽  
Vol 1108 ◽  
Author(s):  
Padmaja Nagaiah ◽  
Vadim Tokranov ◽  
Michael Yakimov ◽  
Serge Oktyabrsky
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Room Temperature ◽  
Indium Content ◽  
Hole Transport ◽  
Scattering Mechanism ◽  
Almost All ◽  
20 Nm ◽  
Lattice Matched ◽  
Ingaas Quantum Well

AbstractWe present experimental results on the effect of strain on hole transport in InGaAs quantum well (QW) structures. Indium content was varied from lattice matched to high compressive stress in InGaAs/InP QW and the transport properties were analyzed at various temperatures (T = 77-300 K) using Hall measurements. The effect of QW thickness (4-20 nm) on hole transport is also presented. The current best results include room temperature mobility and sheet resistance of 390 cm2/V-s and 8500 Ω/sq., respectively. It was observed that the mobility had a T-1.8 dependence indicating similar scattering mechanism in almost all of the samples with prominent mechanism being due to interface and barrier scattering. Further optimization of p-channel for InGaAs CMOS needs to be performed using the above results as guidelines.

scholarly journals Role of dislocations in nitride laser diodes with different indium content

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Agata Bojarska-Cieślińska ◽  
Łucja Marona ◽  
Julita Smalc-Koziorowska ◽  
Szymon Grzanka ◽  
Jan Weyher ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Defect Density ◽  
Laser Diodes ◽  
Diffusion Path ◽  
Vapour Phase ◽  
Indium Content ◽  
Nonradiative Recombination ◽  
Light Emitters ◽  
Vapour Phase Epitaxy

AbstractIn this work we investigate the role of threading dislocations in nitride light emitters with different indium composition. We compare the properties of laser diodes grown on the low defect density GaN substrate with their counterparts grown on sapphire substrate in the same epitaxial process. All structures were produced by metalorganic vapour phase epitaxy and emit light in the range 383–477 nm. We observe that intensity of electroluminescence is strong in the whole spectral region for devices grown on GaN, but decreases rapidly for the devices on sapphire and emitting at wavelength shorter than 420 nm. We interpret this behaviour in terms of increasing importance of dislocation related nonradiative recombination for low indium content structures. Our studies show that edge dislocations are the main source of nonradiative recombination. We observe that long wavelength emitting structures are characterized by higher average light intensity in cathodoluminescence and better thermal stability. These findings indicate that diffusion path of carriers in these samples is shorter, limiting the amount of carriers reaching nonradiative recombination centers. According to TEM images only mixed dislocations open into the V-pits, usually above the multi quantum wells thus not influencing directly the emission.

Optical Study of Localized and Delocalized States in GaAsN/GaAs

2003 ◽  
Vol 798 ◽  
Author(s):  
Z. Y. Xu ◽  
X. D. Luo ◽  
X. D. Yang ◽  
P. H. Tan ◽  
C. L. Yang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Rapid Thermal Annealing ◽  
Short Pulse ◽  
Selective Excitation ◽  
Excitation Power ◽  
Pulse Excitation ◽  
Optical Study ◽  
Time Resolved ◽  
Exciton Localization ◽  
Time Resolved Photoluminescence

ABSTRACTTaking advantages of short pulse excitation and time-resolved photoluminescence (PL), we have studied the exciton localization effect in a number of GaAsN alloys and GaAsN/GaAs quantum wells (QWs). In the PL spectra, an extra transition located at the higher energy side of the commonly reported N-related emissions is observed. By measuring PL dependence on temperature and excitation power along with PL dynamics study, the new PL peak has been identified as a transition of the band edge-related recombination in dilute GaAsN alloy and delocalized transition in QWs. Using selective excitation PL we further attribute the localized emission in QWs to the excitons localized at the GaAsN/GaAs interfaces. This interface-related exciton localization could be greatly reduced by a rapid thermal annealing.

Far-infrared magneto-optical study of two-dimensional electrons and holes in InAs/AlxGa1−xSb quantum wells

1997 ◽  
Vol 55 (3) ◽  
pp. 1617-1636 ◽  
Author(s):  
J. Kono ◽  
B. D. McCombe ◽  
J.-P. Cheng ◽  
I. Lo ◽  
W. C. Mitchel ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Far Infrared ◽  
Two Dimensional ◽  
Optical Study

Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness

2015 ◽  
Vol 117 (5) ◽  
pp. 055709 ◽  
Author(s):  
J. Yang ◽  
D. G. Zhao ◽  
D. S. Jiang ◽  
P. Chen ◽  
J. J. Zhu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Layer Thickness ◽  
Structural Characteristics ◽  
Indium Content ◽  
Cap Layer ◽  
High Indium Content

Optical Study of Bandedge Blue-Shift in AlGaN/GaN Double Quantum Wells

1997 ◽  
Vol 14 (9) ◽  
pp. 708-711
Author(s):  
Yang Kai ◽  
Shen Bo ◽  
Zhang Rong ◽  
Zhou Yu-gang ◽  
Chen Zhi-zhong ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Blue Shift ◽  
Double Quantum ◽  
Optical Study

Research on the high indium content InGaAs multiple quantum wells wafers for λ>1.55μm laser diodes

2015 ◽  
Vol 631 ◽  
pp. 283-287 ◽  
Author(s):  
Tao Lin ◽  
Hang Sun ◽  
Haoqing Zhang ◽  
Yonggang Wang ◽  
Nan Lin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Laser Diodes ◽  
Indium Content ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
High Indium Content

Electroabsorption in lattice-matched InGaAlAs-InAlAs quantum wells at 1.3 μm

1995 ◽  
Vol 7 (10) ◽  
pp. 1159-1161 ◽  
Author(s):  
A.-N. Cheng ◽  
H.H. Wieder ◽  
W.S.C. Chang
Keyword(s):  
Quantum Wells ◽  
Lattice Matched

Near-field optical study of InGaN/GaN epitaxial layers and quantum wells

1998 ◽  
Vol 72 (21) ◽  
pp. 2645-2647 ◽  
Author(s):  
A. Vertikov ◽  
M. Kuball ◽  
A. V. Nurmikko ◽  
Y. Chen ◽  
S.-Y. Wang
Keyword(s):  
Quantum Wells ◽  
Near Field ◽  
Epitaxial Layers ◽  
Optical Study
Sign in / Sign up

Export Citation Format

Share Document