Far-infrared magneto-optical study of two-dimensional electrons and holes in InAs/AlxGa1−xSb quantum wells

1997 ◽  
Vol 55 (3) ◽  
pp. 1617-1636 ◽  
Author(s):  
J. Kono ◽  
B. D. McCombe ◽  
J.-P. Cheng ◽  
I. Lo ◽  
W. C. Mitchel ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Far Infrared ◽  
Two Dimensional ◽  
Optical Study

FAR INFRARED MAGNETO-ABSORPTION STUDY OF BARRIER IMPURITIES AND SCREENING IN GaAs/AlGaAs MULTIPLE QUANTUM WELLS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-239-C5-242 ◽  
Author(s):  
E. GLASER ◽  
B. V. SHANABROOK ◽  
R. J. WAGNER ◽  
R. L. HAWKINS ◽  
W. J. MOORE ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Far Infrared ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Absorption Study

scholarly journals Anisotropic 2D excitons unveiled in organic–inorganic quantum wells

2021 ◽  
Author(s):  
Lorenzo Maserati ◽  
Sivan Refaely-Abramson ◽  
Christoph Kastl ◽  
Christopher T. Chen ◽  
Nicholas J. Borys ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Crystalline Polymer ◽  
Binding Energies ◽  
Two Dimensional ◽  
Metal Chalcogenide

Hybrid layered metal chalcogenide crystalline polymer hosts strongly anisotropic two-dimensional excitons with large binding energies.

Optical Study of Localized and Delocalized States in GaAsN/GaAs

2003 ◽  
Vol 798 ◽  
Author(s):  
Z. Y. Xu ◽  
X. D. Luo ◽  
X. D. Yang ◽  
P. H. Tan ◽  
C. L. Yang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Rapid Thermal Annealing ◽  
Short Pulse ◽  
Selective Excitation ◽  
Excitation Power ◽  
Pulse Excitation ◽  
Optical Study ◽  
Time Resolved ◽  
Exciton Localization ◽  
Time Resolved Photoluminescence

ABSTRACTTaking advantages of short pulse excitation and time-resolved photoluminescence (PL), we have studied the exciton localization effect in a number of GaAsN alloys and GaAsN/GaAs quantum wells (QWs). In the PL spectra, an extra transition located at the higher energy side of the commonly reported N-related emissions is observed. By measuring PL dependence on temperature and excitation power along with PL dynamics study, the new PL peak has been identified as a transition of the band edge-related recombination in dilute GaAsN alloy and delocalized transition in QWs. Using selective excitation PL we further attribute the localized emission in QWs to the excitons localized at the GaAsN/GaAs interfaces. This interface-related exciton localization could be greatly reduced by a rapid thermal annealing.

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