Internal oxidation of vacancy agglomerates in Czochralski silicon wafers during high-temperature anneals

1998 ◽  
Vol 72 (2) ◽  
pp. 223-225 ◽  
Author(s):  
G. Kissinger ◽  
G. Morgenstern ◽  
J. Vanhellemont ◽  
D. Gräf ◽  
U. Lambert ◽  
...  
Keyword(s):  
High Temperature ◽  
Internal Oxidation ◽  
Silicon Wafers ◽  
Czochralski Silicon

Improvement of Czochralski Silicon Wafers By High‐Temperature Annealing

1995 ◽  
Vol 142 (9) ◽  
pp. 3189-3192 ◽  
Author(s):  
D. Gräf ◽  
U. Lambert ◽  
M. Brohl ◽  
A. Ehlert ◽  
R. Wahlich ◽  
...  
Keyword(s):  
High Temperature ◽  
Silicon Wafers ◽  
High Temperature Annealing ◽  
Czochralski Silicon

Enhancement of oxygen precipitation in Czochralski silicon wafers by high-temperature anneals

2006 ◽  
Vol 376-377 ◽  
pp. 169-172 ◽  
Author(s):  
Ling Zhong ◽  
Xiangyang Ma ◽  
Daxi Tian ◽  
Deren Yang
Keyword(s):  
High Temperature ◽  
Silicon Wafers ◽  
Czochralski Silicon ◽  
Oxygen Precipitation

Comparison of high temperature annealed Czochralski silicon wafers and epitaxial wafers

1996 ◽  
Vol 36 (1-3) ◽  
pp. 50-54 ◽  
Author(s):  
D. Gräf ◽  
U. Lambert ◽  
M. Brohl ◽  
A. Ehlert ◽  
R. Wahlich ◽  
...  
Keyword(s):  
High Temperature ◽  
Silicon Wafers ◽  
Czochralski Silicon

Study of the electrical properties of  Cz p-type solar-grade silicon wafers against the high-temperature processes

2021 ◽  
Vol 127 (6) ◽  
Author(s):  
Mohamed Maoudj ◽  
Djoudi Bouhafs ◽  
Nacer Eddine Bourouba ◽  
Abdelhak Hamida-Ferhat ◽  
Abdelkader El Amrani
Keyword(s):  
High Temperature ◽  
Electrical Properties ◽  
Silicon Wafers ◽  
Solar Grade Silicon ◽  
High Temperature Processes ◽  
Grade Silicon ◽  
P Type

Precipitation Enhancement of "so Called" Defect-Free Czochralski Silicon Material

2005 ◽  
Vol 108-109 ◽  
pp. 11-16
Author(s):  
Timo Müller ◽  
G. Kissinger ◽  
P. Krottenthaler ◽  
C. Seuring ◽  
R. Wahlich ◽  
...  
Keyword(s):  
High Temperature ◽  
Thermal Treatments ◽  
Low Oxygen ◽  
Zone Formation ◽  
Czochralski Silicon ◽  
Silicon Material ◽  
Free Material ◽  
Precipitation Enhancement

Thermal treatments to enhance precipitation like RTA, ramp anneal and argon anneal were performed on low oxygen 300 mm wafers without vacancy or interstitial agglomerates (“so called” defect-free material). Best results were achieved using high temperature argon anneal leading to a homogenous BMD and denuded zone formation. Furthermore the getter efficiency was positively tested by intentional Ni-contamination. Concepts to overcome the slip danger like improved support geometries and nitrogen codoping were also evaluated and are seen to be beneficial.

Oxygen Precipitation in Conventional and Nitrogen Co-Doped Heavily Arsenic-Doped Czochralski Silicon Crystals: Oswald Ripening

2009 ◽  
Vol 156-158 ◽  
pp. 275-278
Author(s):  
Xiang Yang Ma ◽  
Yan Feng ◽  
Yu Heng Zeng ◽  
De Ren Yang
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Oxygen Precipitation ◽  
High Temperature Anneal ◽  
Oxygen Precipitates ◽  
Co Doped ◽  
Oswald Ripening

Oxygen precipitation (OP) behaviors in conventional and nitrogen co-doped heavily arsenic-doped Czocharalski silicon crystals subjected to low-high two-step anneals of 650 oC/8 h + 1000 oC/4-256 h have been comparatively investigated. Due to the nitrogen enhanced nucleation of OP during the low temperature anneal, much higher density of oxygen precipitates generated in the nitrogen co-doped specimens. With the extension of high temperature anneal, Oswald ripening of OP in the nitrogen co-doped specimens preceded that in the conventional ones. Moreover, due to the Oswald ripening effect, the oxygen precipitates in the conventional specimens became larger with a wider range of sizes. While, the sizes of oxygen precipitates in the nitrogen co-doped specimens distributed in a much narrower range with respect to the conventional ones.

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