Langmuir probe analysis of distributed electron cyclotron resonance silicon nitride deposition plasma

F. Delmotte; M. C. Hugon; B. Agius; A. M. Pointu; S. Teodoru

doi:10.1063/1.120608

Langmuir probe analysis of distributed electron cyclotron resonance silicon nitride deposition plasma

Applied Physics Letters ◽

10.1063/1.120608 ◽

1998 ◽

Vol 72 (12) ◽

pp. 1448-1450 ◽

Cited By ~ 5

Author(s):

F. Delmotte ◽

M. C. Hugon ◽

B. Agius ◽

A. M. Pointu ◽

S. Teodoru

Keyword(s):

Silicon Nitride ◽

Langmuir Probe ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Probe Analysis

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Silicon nitride films synthesized by reactive pulsed laser deposition in an electron cyclotron resonance nitrogen plasma

Thin Solid Films ◽

10.1016/s0040-6090(99)00324-7 ◽

1999 ◽

Vol 350 (1-2) ◽

pp. 101-105 ◽

Cited By ~ 26

Author(s):

J.D Wu ◽

J Sun ◽

X.X Zhong ◽

Z.Y Zhou ◽

C.Z Wu ◽

...

Keyword(s):

Silicon Nitride ◽

Pulsed Laser Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Pulsed Laser ◽

Nitrogen Plasma ◽

Electron Cyclotron ◽

Laser Deposition ◽

Silicon Nitride Films

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Silicon nitride deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposititon for micromachining applications

10.1117/12.324050 ◽

1998 ◽

Author(s):

Roberto R. Panepucci ◽

Jose A. Diniz ◽

Eduardo Carli ◽

Peter J. Tatschi ◽

Jacobus W. Swart

Keyword(s):

Silicon Nitride ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Langmuir probe and optical emission studies of Ar, O2, and N2 plasmas produced by an electron cyclotron resonance microwave source

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.577874 ◽

1992 ◽

Vol 10 (5) ◽

pp. 3119-3124 ◽

Cited By ~ 29

Author(s):

A. A. Shatas ◽

Y. Z. Hu ◽

E. A. Irene

Keyword(s):

Langmuir Probe ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Optical Emission ◽

Electron Cyclotron ◽

Microwave Source ◽

Emission Studies ◽

Resonance Microwave

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Measurements of rf bias effect in a dual electron cyclotron resonance-rf methane plasma using the Langmuir probe method

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.582215 ◽

2000 ◽

Vol 18 (2) ◽

pp. 497-502 ◽

Cited By ~ 9

Author(s):

Junegie Hong ◽

Agnès Granier ◽

Christiane Leteinturier ◽

Marie-Claude Peignon ◽

Guy Turban

Keyword(s):

Langmuir Probe ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Probe Method ◽

Bias Effect

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Langmuir probe diagnostics of microwave electron cyclotron resonance (ECR) plasma

Vacuum ◽

10.1016/j.vacuum.2008.05.030 ◽

2008 ◽

Vol 83 (2) ◽

pp. 372-377 ◽

Cited By ~ 19

Author(s):

S.B. Singh ◽

N. Chand ◽

D.S. Patil

Keyword(s):

Langmuir Probe ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Ecr Plasma ◽

Probe Diagnostics

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Formation of silicon nitride layers by nitrogen ion irradiation of silicon biased to a high voltage in an electron cyclotron resonance microwave plasma

Applied Physics Letters ◽

10.1063/1.121001 ◽

1998 ◽

Vol 72 (10) ◽

pp. 1164-1166 ◽

Cited By ~ 8

Author(s):

W. Ensinger ◽

K. Volz ◽

G. Schrag ◽

B. Stritzker ◽

B. Rauschenbach

Keyword(s):

Silicon Nitride ◽

High Voltage ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Microwave Plasma ◽

Ion Irradiation ◽

Electron Cyclotron ◽

Nitrogen Ion ◽

Nitride Layers ◽

Resonance Microwave

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Kinetics and Compositional Dependence on the Microwave Power and SiH4 / N 2 Flow Ratio of Silicon Nitride Deposited by Electron Cyclotron Resonance Plasmas

Journal of The Electrochemical Society ◽

10.1149/1.2059309 ◽

1994 ◽

Vol 141 (11) ◽

pp. 3234-3237 ◽

Cited By ~ 13

Author(s):

M. J. Hernandez ◽

J. Garrido ◽

J. Martinez ◽

J. Piqueras

Keyword(s):

Silicon Nitride ◽

Microwave Power ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Flow Ratio ◽

Compositional Dependence

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I‐Vcharacteristics of electron‐cyclotron‐resonance plasma‐enhanced chemical‐vapor‐deposition silicon nitride thin films

Journal of Applied Physics ◽

10.1063/1.356455 ◽

1994 ◽

Vol 75 (2) ◽

pp. 979-984 ◽

Cited By ~ 26

Author(s):

Yoo‐Chan Jeon ◽

Ho‐Young Lee ◽

Seung‐Ki Joo

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Silicon Nitride ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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On the silicon nitride film formation from N/sub 2/-SiH/sub 4/ electron cyclotron resonance plasma

IEEE Conference Record - Abstracts. 1992 IEEE International Conference on Plasma ◽

10.1109/plasma.1992.697984 ◽

2005 ◽

Author(s):

Sun-Kyu Song ◽

Hong-young Chang

Keyword(s):

Silicon Nitride ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Film Formation ◽

Electron Cyclotron ◽

Nitride Film ◽

Silicon Nitride Film ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Low temperature growth of silicon nitride by electron cyclotron resonance plasma enhanced chemical vapour deposition

Thin Solid Films ◽

10.1016/s0040-6090(00)01628-x ◽

2001 ◽

Vol 383 (1-2) ◽

pp. 172-177 ◽

Cited By ~ 34

Author(s):

A.J. Flewitt ◽

A.P. Dyson ◽

J. Robertson ◽

W.I. Milne

Keyword(s):

Silicon Nitride ◽

Low Temperature ◽

Chemical Vapour Deposition ◽

Cyclotron Resonance ◽

Vapour Deposition ◽

Electron Cyclotron Resonance ◽

Chemical Vapour ◽

Electron Cyclotron ◽

Temperature Growth ◽

Resonance Plasma

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