Origin of dislocation-related photoluminescence bands in very thin silicon–germanium layers grown on silicon substrates

1997 ◽  
Vol 71 (26) ◽  
pp. 3823-3825 ◽  
Author(s):  
Hosun Lee ◽  
Suk-Ho Choi ◽  
T.-Y. Seong
Keyword(s):  
Silicon Germanium ◽  
Silicon Substrates ◽  
Thin Silicon

Doping and crystallization of amorphous SiGe films with an excimer (KrF) laser

1995 ◽  
Vol 10 (8) ◽  
pp. 1884-1888 ◽  
Author(s):  
S. Krishnan ◽  
M.I. Chaudhry ◽  
S.V. Babu
Keyword(s):  
Silicon Germanium ◽  
Room Temperature ◽  
Laser Pulses ◽  
Laser Exposure ◽  
Silicon Substrates ◽  
A Value ◽  
Crystal Film ◽  
Krf Laser ◽  
Amorphous Silicon Germanium

Amorphous silicon germanium (a-SiGe) films, deposited on silicon substrates at room temperature in a molecular beam epitaxy system, were transformed into a single-crystal film and doped with phosphorus by exposure to KrF laser pulses. Electron channeling patterns showed that laser exposure resulted in crystallization of the undoped a-SiGe films. The SiGe films were doped by laser irradiation, using a phosphorus spin-on-dopant. The sheet resistance of the doped films decreased with increasing numbers of pulses, reaching a value of about ∼ 5 × 104 ohms/□ after 15 pulses. I-V data from mesa-type n-SiGe/p-Si diode devices were used to determine the effect of laser processing on the quality of the SiGe films.

High-speed amorphous silicon germanium infrared sensors prepared on crystalline silicon substrates

1998 ◽  
Vol 45 (9) ◽  
pp. 2085-2088 ◽  
Author(s):  
Jyh-Jier Ho ◽  
Y.K. Fang ◽  
Kun-Hsien Wu ◽  
W.T. Hsieh ◽  
S.C. Huang ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Silicon Germanium ◽  
High Speed ◽  
Crystalline Silicon ◽  
Silicon Substrates ◽  
Infrared Sensors ◽  
Amorphous Silicon Germanium

UV-laser-assisted processing of thin silicon–germanium–carbon films

2006 ◽  
Vol 508 (1-2) ◽  
pp. 48-52 ◽  
Author(s):  
E. López ◽  
S. Chiussi ◽  
J. Serra ◽  
P. González ◽  
B. León
Keyword(s):  
Silicon Germanium ◽  
Carbon Films ◽  
Uv Laser ◽  
Thin Silicon ◽  
Silicon Germanium Carbon

scholarly journals Compensating film stress in thin silicon substrates using ion implantation

2019 ◽  
Vol 27 (8) ◽  
pp. 11182 ◽  
Author(s):  
Brandon D. Chalifoux ◽  
Youwei Yao ◽  
Kevin B. Woller ◽  
Ralf K. Heilmann ◽  
Mark L. Schattenburg
Keyword(s):  
Ion Implantation ◽  
Film Stress ◽  
Silicon Substrates ◽  
Thin Silicon

Contact Resistivity of Laser Annealed SiGe for MEMS Structural Layers Deposited at 210°C

2011 ◽  
Vol 1299 ◽  
Author(s):  
Joumana El-Rifai ◽  
Ann Witvrouw ◽  
Ahmed Abdel Aziz ◽  
Robert Puers ◽  
Chris Van Hoof ◽  
...  
Keyword(s):  
Silicon Germanium ◽  
Laser Annealing ◽  
Contact Resistivity ◽  
Silicon Substrates ◽  
Lower Electrode ◽  
Micro Electro Mechanical Systems ◽  
High Hydrogen ◽  
Flexible Polymer ◽  
Major Disadvantage ◽  
Structural Layer

ABSTRACTLowering the silicon germanium (SiGe) deposition temperature from the current 450°C to below 250°C will enable processing Micro Electro-Mechanical Systems (MEMS) on flexible polymer instead of on rigid silicon substrates or glass carriers. A major disadvantage of such a low temperature deposition is that the films are amorphous, with high hydrogen content and yield poor electrical and mechanical properties. To ensure films suitable for MEMS applications, a post-deposition laser annealing (LA) treatment is used. It is essential that the contact resistance between the SiGe MEMS structural layer and any lower electrode is minimized. In this work we investigate what beneficial effect a LA treatment can have on the contact resistivity of an initially amorphous SiGe MEMS structural layer with a bottom TiN electrode. We report a minimum contact resistivity of 2.14×10−3Ωcm2.

Germanium-rich silicon-germanium films epitaxially grown by ultrahigh vacuum chemical-vapor deposition directly on silicon substrates

2007 ◽  
Vol 91 (25) ◽  
pp. 252111 ◽  
Author(s):  
Douglas D. Cannon ◽  
Jifeng Liu ◽  
David T. Danielson ◽  
Samerkhae Jongthammanurak ◽  
Uchechukwu U. Enuha ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Germanium ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Germanium Films

Optimisation of amorphous and polymorphous thin silicon layers for the formation of the front-side of heterojunction solar cells on p-type crystalline silicon substrates

2006 ◽  
Vol 511-512 ◽  
pp. 543-547 ◽  
Author(s):  
Y. Veschetti ◽  
J.-C. Muller ◽  
J. Damon-Lacoste ◽  
P. Roca i Cabarrocas ◽  
A.S. Gudovskikh ◽  
...  
Keyword(s):  
Solar Cells ◽  
Crystalline Silicon ◽  
Silicon Substrates ◽  
Front Side ◽  
Heterojunction Solar Cells ◽  
Thin Silicon ◽  
P Type
Sign in / Sign up

Export Citation Format

Share Document