Epitaxial Silicon-Germanium Alloy Films on Silicon Substrates

1962 ◽  
Vol 109 (1) ◽  
pp. 70 ◽  
Author(s):  
K. J. Miller ◽  
M. J. Grieco
Keyword(s):  
Silicon Germanium ◽  
Silicon Substrates ◽  
Epitaxial Silicon ◽  
Alloy Films ◽  
Germanium Alloy

Extreme Supersaturation of Oxygen in Low Temperature Epitaxial Silicon and Silicon-Germanium Alloys

1989 ◽  
Vol 163 ◽  
Author(s):  
P.V. Schwartz ◽  
J.C. Sturm ◽  
P.M. Garone ◽  
S.A. Schwarz
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Silicon Germanium ◽  
Stacking Faults ◽  
Exact Nature ◽  
Epitaxial Silicon ◽  
Infrared Transmission ◽  
Temperature Growth ◽  
Structural And Electrical Properties ◽  
Germanium Alloy

AbstractWe report the low temperature growth (625 - 700 °C) of epitaxial silicon and silicon-germanium alloy films by vapor phase techniques with oxygen concentrations approximately 1020 cm-3. These concentrations are well above the accepted solid solubility for oxygen in silicon. The films, however, have excellent structural and electrical properties with virtually no stacking faults or “haze”. Infrared transmission analysis suggests the possible presence of OH, but the exact nature of the oxygen is not known.

Low Resistivity Boron Doped Amorphous Silicon-Germanium Alloy Films Obtained with a Low Frequency

2003 ◽  
Vol 796 ◽  
Author(s):  
Plasma A. Heredia-J ◽  
A. Torres-J ◽  
F.J. De la Hidalga-W ◽  
A. Jaramillo-N ◽  
J. Sanchez-M ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Low Frequency ◽  
Chemical Vapor ◽  
Refraction Index ◽  
Alloy Films ◽  
Boron Doped ◽  
Structural And Electrical Properties ◽  
Germanium Alloy ◽  
Amorphous Silicon Germanium

AbstractThe structural and electrical properties of boron doped amorphous silicon-germanium alloy films, obtained using a low frequency plasma enhanced chemical vapor deposition (LF PECVD), are presented in this contribution. These thin films were deposited on a substrate heated at 270°C, and by decomposing a mixture of silane, germane, and diborane gases. The chemical bond structure was studied by Infrared Spectroscopy. Our results show that, for a constant diborane flow, the increase of germane flow enhances the incorporation of boron into the film; the peak at 2540 cm−1 becomes larger as the Ge content increases. Transport of carriers was studied by measuring current-voltage curves as a function of temperature. The conductivity increased from 10−6 to 10 (Ω-cm)−1, while the refraction index increased from 3.312 to 4.4458, for an increasing Ge content; this makes the films suitable for optical waveguide applications. On the other hand, the activation energy varied from 0.668 to 0.220 eV when the sample was doped with boron. The AFM images showed that the surface roughness was improved for an alloy with 50% of Ge.

scholarly journals Laser processed semiconductors for integrated photonic devices -INVITED

2020 ◽  
Vol 238 ◽  
pp. 01001
Author(s):  
Anna C. Peacock ◽  
Stuart J. MacFarquhar ◽  
Yohann Franz ◽  
Antoine F. J. Runge ◽  
Sakellaris Mailis ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Low Temperatures ◽  
Laser Processing ◽  
Low Cost ◽  
Photonic Devices ◽  
High Density ◽  
Semiconductor Materials ◽  
Alloy Films ◽  
Germanium Alloy

We report results of laser processing of amorphous silicon and silicon-germanium semiconductor materials for the production of integrated photonic platforms. As the materials are deposited and processed at low temperatures, they are flexible, low cost, and suitable for multi-layer integration with other photonic or electronic layers. We demonstrate the formation of waveguides via crystallization of pre-patterned silicon components and functional microstructures through crystallization and compositional tuning of silicon-germanium alloy films. These results open a route for the fabrication of high density, multi-functional integrated optoelectronic chips.

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