Silicon germanium-heterostructures on silicon substrates

1987 ◽  
pp. 265-277 ◽  
Author(s):  
Erich Kasper
Keyword(s):  
Silicon Germanium ◽  
Silicon Substrates

Doping and crystallization of amorphous SiGe films with an excimer (KrF) laser

1995 ◽  
Vol 10 (8) ◽  
pp. 1884-1888 ◽  
Author(s):  
S. Krishnan ◽  
M.I. Chaudhry ◽  
S.V. Babu
Keyword(s):  
Silicon Germanium ◽  
Room Temperature ◽  
Laser Pulses ◽  
Laser Exposure ◽  
Silicon Substrates ◽  
A Value ◽  
Crystal Film ◽  
Krf Laser ◽  
Amorphous Silicon Germanium

Amorphous silicon germanium (a-SiGe) films, deposited on silicon substrates at room temperature in a molecular beam epitaxy system, were transformed into a single-crystal film and doped with phosphorus by exposure to KrF laser pulses. Electron channeling patterns showed that laser exposure resulted in crystallization of the undoped a-SiGe films. The SiGe films were doped by laser irradiation, using a phosphorus spin-on-dopant. The sheet resistance of the doped films decreased with increasing numbers of pulses, reaching a value of about ∼ 5 × 104 ohms/□ after 15 pulses. I-V data from mesa-type n-SiGe/p-Si diode devices were used to determine the effect of laser processing on the quality of the SiGe films.

High-speed amorphous silicon germanium infrared sensors prepared on crystalline silicon substrates

1998 ◽  
Vol 45 (9) ◽  
pp. 2085-2088 ◽  
Author(s):  
Jyh-Jier Ho ◽  
Y.K. Fang ◽  
Kun-Hsien Wu ◽  
W.T. Hsieh ◽  
S.C. Huang ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Silicon Germanium ◽  
High Speed ◽  
Crystalline Silicon ◽  
Silicon Substrates ◽  
Infrared Sensors ◽  
Amorphous Silicon Germanium

Contact Resistivity of Laser Annealed SiGe for MEMS Structural Layers Deposited at 210°C

2011 ◽  
Vol 1299 ◽  
Author(s):  
Joumana El-Rifai ◽  
Ann Witvrouw ◽  
Ahmed Abdel Aziz ◽  
Robert Puers ◽  
Chris Van Hoof ◽  
...  
Keyword(s):  
Silicon Germanium ◽  
Laser Annealing ◽  
Contact Resistivity ◽  
Silicon Substrates ◽  
Lower Electrode ◽  
Micro Electro Mechanical Systems ◽  
High Hydrogen ◽  
Flexible Polymer ◽  
Major Disadvantage ◽  
Structural Layer

ABSTRACTLowering the silicon germanium (SiGe) deposition temperature from the current 450°C to below 250°C will enable processing Micro Electro-Mechanical Systems (MEMS) on flexible polymer instead of on rigid silicon substrates or glass carriers. A major disadvantage of such a low temperature deposition is that the films are amorphous, with high hydrogen content and yield poor electrical and mechanical properties. To ensure films suitable for MEMS applications, a post-deposition laser annealing (LA) treatment is used. It is essential that the contact resistance between the SiGe MEMS structural layer and any lower electrode is minimized. In this work we investigate what beneficial effect a LA treatment can have on the contact resistivity of an initially amorphous SiGe MEMS structural layer with a bottom TiN electrode. We report a minimum contact resistivity of 2.14×10−3Ωcm2.

Germanium-rich silicon-germanium films epitaxially grown by ultrahigh vacuum chemical-vapor deposition directly on silicon substrates

2007 ◽  
Vol 91 (25) ◽  
pp. 252111 ◽  
Author(s):  
Douglas D. Cannon ◽  
Jifeng Liu ◽  
David T. Danielson ◽  
Samerkhae Jongthammanurak ◽  
Uchechukwu U. Enuha ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Germanium ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Germanium Films

Piezoresistance in Strained Silicon and Strained Silicon Germanium

2006 ◽  
Vol 958 ◽  
Author(s):  
Jacob Richter ◽  
M. B. Arnoldus ◽  
J. Lundsgaard Hansen ◽  
A. Nylandsted Larsen ◽  
O. Hansen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Silicon Germanium ◽  
Molecular Beam ◽  
Silicon Crystal ◽  
Experimental Results ◽  
Strained Silicon ◽  
Silicon Substrates ◽  
Temperature Dependency ◽  
Strained Layer

ABSTRACTThis paper presents experimental results of the piezoresistance in p-type tensile strained silicon and compressive strained silicon germanium grown by molecular beam epitaxy (MBE) on (001) silicon substrates. The piezoresistance decreases in a tensile strained layer and increases in a compressive strained layer when compared to the unstrained material. The results show that one can tune the piezoresistance by tuning the strain in the piezoresistor and thus tailor the performance of the device. The obtained results show an increase in the piezoresistance effect of 35% in compressive strained silicon germanium and a decrease in the piezoresistance effect in tensile strained silicon of 24%. Furthermore, the results show that the piezoresistance of a tensile strained silicon crystal has a smaller temperature dependency compared to that of unstrained silicon. The piezoresistance effect decreases by 7% in tensile strained silicon compared to the piezoresistance effect decrease in silicon of 18% when changing the temperature from 30°C to 80°C.

Observation of dislocations in strain-relaxed silicon–germanium thin films with flat surfaces grown on ion-implanted silicon substrates

2004 ◽  
Vol 7 (4-6) ◽  
pp. 389-392 ◽  
Author(s):  
Junji Yamanaka ◽  
Kentaro Sawano ◽  
Kiyokazu Nakagawa ◽  
Kumiko Suzuki ◽  
Yusuke Ozawa ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Germanium ◽  
Silicon Substrates ◽  
Flat Surfaces ◽  
Ion Implanted

Etch Selectivity of Novel Epitaxial Layers for Bulk Micromachining

1998 ◽  
Vol 546 ◽  
Author(s):  
J. T. Borenstein ◽  
N. D. Gerrish ◽  
M. T. Currie ◽  
E. A. Fitzgerald
Keyword(s):  
Epitaxial Layer ◽  
Silicon Germanium ◽  
High Performance ◽  
Microstructural Analysis ◽  
Epitaxial Layers ◽  
Silicon Substrates ◽  
High Concentration ◽  
Dislocation Arrays ◽  
High Boron ◽  
Micromechanical Sensors

AbstractThe present work demonstrates very high etch selectivity for a novel epitaxial layer in several standard bulk micromachining etchants. High selectivities have previously been achieved using high-concentration boron diffusions, resulting in a wide array of high performance micromechanical sensors. However, doping gradients, precipitates and dislocation arrays generated from the high boron concentrations can have deleterious effects on device performance. In this work, we report on the performance of a novel epitaxial structure composed of a silicon-germanium alloy device layer over a graded buffer layer. Chemical and microstructural analysis of the epitaxial layers reveal high purity and minimal defect densities. The selectivities of this layer and of boron-diffused layers are determined for a variety of etching conditions. High selectivity against low-doped silicon substrates is demonstrated in both ethylenediamine pyrocatechol and potassium hydroxide. Micromachined structures built using the SiGe epitaxial layer show smooth surfaces and precise build dimensions.

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