scholarly journals Pd/Ge/Ti/Au ohmic contact to AlGaAs/InGaAs pseudomorphic high electron mobility transistor with an undoped cap layer

1997 ◽  
Vol 71 (18) ◽  
pp. 2656-2658 ◽  
Author(s):  
Yi-Tae Kim ◽  
Jong-Lam Lee ◽  
Jae Kyoung Mun ◽  
Haecheon Kim
Keyword(s):  
Ohmic Contact ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Cap Layer

Ohmic Contact Properties Depending on AlGaN Layer Thickness for AlGaN/GaN High Electron Mobility Transistor Structures

2014 ◽  
Vol 61 (4) ◽  
pp. 265-270 ◽  
Author(s):  
Y. Takei ◽  
M. Okamoto ◽  
W. Saito ◽  
K. Tsutsui ◽  
K. Kakushima ◽  
...  
Keyword(s):  
Layer Thickness ◽  
Ohmic Contact ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Algan Layer ◽  
High Electron Mobility

WSiN Cap Layer for Improvement of Ohmic Contact Morphology in AlGaN/GaN High Electron Mobility Transistors

2009 ◽  
Vol 48 (11) ◽  
pp. 111003
Author(s):  
Chung Yu Lu ◽  
Oliver Hilt ◽  
Richard Lossy ◽  
Nidhi Chaturvedi ◽  
Wilfred John ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Cap Layer

scholarly journals Characteristic analysis of new AlGaN/GaN high electron mobility transistor with a partial GaN cap layer

2017 ◽  
Vol 66 (16) ◽  
pp. 167301
Author(s):  
Guo Hai-Jun ◽  
Duan Bao-Xing ◽  
Yuan Song ◽  
Xie Shen-Long ◽  
Yang Yin-Tang
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Characteristic Analysis ◽  
High Electron Mobility ◽  
Cap Layer

Metal/Al-doped ZnO ohmic contact for AlGaN/GaN high electron mobility transistor

2004 ◽  
Vol 84 (20) ◽  
pp. 3996-3998 ◽  
Author(s):  
K. Nishizono ◽  
M. Okada ◽  
M. Kamei ◽  
D. Kikuta ◽  
K. Tominaga ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Doped Zno

AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor using Pd/Ge Ohmic Contact

2001 ◽  
Vol 40 (Part 1, No. 3A) ◽  
pp. 1188-1193 ◽  
Author(s):  
Jong-Lam Lee ◽  
Yi-Tae Kim ◽  
Jung-Woo Oh ◽  
Byung-Teak Lee
Keyword(s):  
Ohmic Contact ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility
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