Ohmic Contact Properties Depending on AlGaN Layer Thickness for AlGaN/GaN High Electron Mobility Transistor Structures
2016 ◽
Vol 55
(4)
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pp. 040306
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1998 ◽
Vol 16
(5)
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pp. 2725
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2001 ◽
Vol 40
(Part 1, No. 3A)
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pp. 1188-1193
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2016 ◽
Vol 93
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pp. 303-307
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Keyword(s):
2011 ◽
Vol 29
(2)
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pp. 021002
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1999 ◽
Vol 17
(3)
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pp. 1034
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Keyword(s):