Metal/Al-doped ZnO ohmic contact for AlGaN/GaN high electron mobility transistor

2004 ◽  
Vol 84 (20) ◽  
pp. 3996-3998 ◽  
Author(s):  
K. Nishizono ◽  
M. Okada ◽  
M. Kamei ◽  
D. Kikuta ◽  
K. Tominaga ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Doped Zno

Ohmic Contact Properties Depending on AlGaN Layer Thickness for AlGaN/GaN High Electron Mobility Transistor Structures

2014 ◽  
Vol 61 (4) ◽  
pp. 265-270 ◽  
Author(s):  
Y. Takei ◽  
M. Okamoto ◽  
W. Saito ◽  
K. Tsutsui ◽  
K. Kakushima ◽  
...  
Keyword(s):  
Layer Thickness ◽  
Ohmic Contact ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Algan Layer ◽  
High Electron Mobility

AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor using Pd/Ge Ohmic Contact

2001 ◽  
Vol 40 (Part 1, No. 3A) ◽  
pp. 1188-1193 ◽  
Author(s):  
Jong-Lam Lee ◽  
Yi-Tae Kim ◽  
Jung-Woo Oh ◽  
Byung-Teak Lee
Keyword(s):  
Ohmic Contact ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility

scholarly journals An AlN/Al0.85Ga0.15N high electron mobility transistor with a regrown ohmic contact

2016 ◽  
Author(s):  
Albert G. Baca ◽  
Andrew M. Armstrong ◽  
Andrew A. Allerman ◽  
Erica A. Douglas ◽  
Carlos A. Sanchez ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility
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