scholarly journals Microstructural evidence on direct contact of Au/Ge/Ni/Au ohmic metals to InGaAs channel in pseudomorphic high electron mobility transistor with undoped cap layer

1998 ◽  
Vol 73 (12) ◽  
pp. 1670-1672 ◽  
Author(s):  
Jong-Lam Lee ◽  
Yi-Tae Kim ◽  
Jeong Yong Lee
Keyword(s):  
Electron Mobility ◽  
Direct Contact ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Cap Layer

scholarly journals Characteristic analysis of new AlGaN/GaN high electron mobility transistor with a partial GaN cap layer

2017 ◽  
Vol 66 (16) ◽  
pp. 167301
Author(s):  
Guo Hai-Jun ◽  
Duan Bao-Xing ◽  
Yuan Song ◽  
Xie Shen-Long ◽  
Yang Yin-Tang
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Characteristic Analysis ◽  
High Electron Mobility ◽  
Cap Layer

The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor

2019 ◽  
Vol 217 (7) ◽  
pp. 1900694
Author(s):  
Uiho Choi ◽  
Donghyeop Jung ◽  
Kyeongjae Lee ◽  
Taemyung Kwak ◽  
Taehoon Jang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Double Heterostructure ◽  
Aln Buffer

Double δ-Doped Enhancement-Mode InGaP/AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor for Linearity Application

2006 ◽  
Vol 45 (No. 35) ◽  
pp. L932-L934 ◽  
Author(s):  
Li-Hsin Chu ◽  
Heng-Tung Hsu ◽  
Edward-Yi Chang ◽  
Tser-Lung Lee ◽  
Sze-Hung Chen ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Enhancement Mode
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