Modified Dislocation Structures in GexSi1-x Double Epilayers on (001)Si

1989 ◽  
Vol 160 ◽  
Author(s):  
Eric P. Kvam
Keyword(s):  
Misfit Dislocation ◽  
Critical Thickness ◽  
Misfit Dislocations ◽  
Strain Relief ◽  
Edge Type

AbstractDouble epilayers of different compositions of GexSi1-x on (001)Si are observed to have dislocation contents which differ markedly from similar single epilayers. An initial epilayer, grown below its critical thickness, underwent substantial misfit dislocation introduction, while a second epilayer, grown at a composition where edge-type misfit dislocations are normally observed to dominate the morphology, contained mostly 60° type dislocations. It is suggested that dislocation entry into the upper, high mismatch epilayer allows many dislocations to enter the buried, low mismatch epilayer, and that this in turn affects the dislocation morphology in the upper layer through strain relief.

Equilibrium Analysis of Lattice-Mismatched Nanowire Heterostructures

2002 ◽  
Vol 737 ◽  
Author(s):  
E. Ertekin ◽  
P.A. Greaney ◽  
T. D. Sands ◽  
D. C. Chrzan
Keyword(s):  
Simple Model ◽  
Misfit Dislocation ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Equilibrium Analysis ◽  
Misfit Dislocations ◽  
Model Based ◽  
Large Lattice ◽  
Large Lattice Mismatch

ABSTRACTThe quality of lattice-mismatched semiconductor heterojunctions is often limited by the presence of misfit dislocations. Nanowire geometries offer the promise of creating highly mismatched, yet dislocation free heterojunctions. A simple model, based upon the critical thickness model of Matthews and Blakeslee for misfit dislocation formation in planar heterostructures, illustrates that there exists a critical nanowire radius for which a coherent heterostructured nanowire system is unstable with respect to the formation of misfit dislocations. The model indicates that within the nanowire geometry, it should be possible to create perfect heterojunctions with large lattice-mismatch.

Dislocation Behaviour in GexSi1-x Epilayers on (001)Si

1989 ◽  
Vol 160 ◽  
Author(s):  
Eric P. Kvam ◽  
D.M. Maher ◽  
C.J. Humphreys
Keyword(s):  
Dislocation Density ◽  
Film Thickness ◽  
Critical Thickness ◽  
Three Dimensional ◽  
Critical Value ◽  
Misfit Dislocations ◽  
Island Growth ◽  
Edge Type ◽  
Dislocation Behaviour ◽  
Step Mechanism

AbstractWe have observed that the nature of misfit dislocations introduced near the critical thickness in GexSi1-x alloys on (001)Si changes markedly in the region 0.4 ≤ x ≤ 0.5. At or below the lower end of this compositional range, the observed microstructure is comprised almost entirely of 60° type dislocations, while at the high end, the dislocation structure is almost entirely Lomer edge type. Concurrent with this change, the dislocation density at the top of the epilayer varies by a factor of about 60X. Similarly, several other observables (e.g. dislocation length and spacing) also change appreciably.Part of the reason for the morphological variation seems to be a change in the source for dislocation introduction, in conjunction with a change in glide behaviour of dislocations as a function of film thickness. Evidence will be presented that indicates strain, as well as thickness, has a critical value for some dislocation introduction mechanisms, and that these together determine the resulting microstructure.Furthermore, it appears unlikely that the edge-type Lomer dislocations which appear at about x = 0.5 are either introduced directly, by climb, or grown in, as in the three-dimensional island growth and coalescence which occurs when x approaches unity. Instead, a two-step mechanism involving glissile dislocations is proposed and discussed.

A Theoretical Calculation of Misfit Dislocation and Strain Relaxation in Step-graded InxGa 1-x N/GaN Layers

2011 ◽  
Vol 403-408 ◽  
pp. 456-460 ◽  
Author(s):  
Md. Arafat Hossain ◽  
Md. Rafiqul Islam
Keyword(s):  
Theoretical Calculation ◽  
Layer Thickness ◽  
Misfit Dislocation ◽  
Residual Strain ◽  
Critical Thickness ◽  
Strain Relaxation ◽  
Misfit Strain ◽  
Misfit Dislocations ◽  
Uniform Layer ◽  
Dislocation Energy

This paper presents a theoretical calculation of misfit dislocation and strain relaxation in compositionally step graded InxGa1-xN grown on GaN using the total dislocation energy at each interface. The results also compared with uniform layer of In0.17Ga0.83N and In0.14Ga0.86N grown differently on GaN. Due to having residual strain and a step increase in indium composition a lower misfit strain in upper layers and hence larger critical thickness at each interface has been reported. These effects significantly reduced the misfit dislocations from 2.6×105cm-1to 9.5×104cm-1in step graded In0.14Ga0.86N(500nm)/In0.09Ga0.91N(100nm)/In0.05Ga0.95N(100nm)/GaN layers instead of a uniform In0.14Ga0.86N(700nm)/GaN. A small residual strain of 0.0007 after 700 nm graded layer thickness has been reported with 87.04% strain relaxation.

Reduction of Misfit Dislocation Density in Finite Lateral Size Sil-xGex Films Grown by Selective Epitaxy

1993 ◽  
Vol 298 ◽  
Author(s):  
L. Vescan ◽  
T. Stoica ◽  
C. Dieker ◽  
H. LÜth
Keyword(s):  
Dislocation Density ◽  
Misfit Dislocation ◽  
Equilibrium Model ◽  
Size Dependence ◽  
Critical Thickness ◽  
Misfit Dislocations ◽  
Lateral Size ◽  
Relaxation Model ◽  
Main Hypothesis ◽  
Strained Layers

AbstractIn Si0.88Ge0.12/Si strained layers misfit dislocations formed during growth in small pads are generated at a significantly higher critical thickness than on extended areas, while pads of lateral size of 10 μm or smaller show no evidence of misfit dislocations at all. The SiGe layers investigated were selectively grown on patterned substrates with pad sizes from 2 μm to 1 cm. An elastic relaxation model was used to calculate the pad size dependence of the critical thickness. The main hypothesis of the model is that the density of misfit dislocations is solely affected by the elastic relaxation at the edges of small epitaxial areas. This equilibrium model is able to explain the observed absence of misfit dislocations on small pads, however it predicts a critical thickness for finite sizes much lower than the observed one.

A phase field crystal model simulation of morphology evolution and misfit dislocation generation in nanoheteroepitaxy

2017 ◽  
Vol 31 (30) ◽  
pp. 1750283 ◽  
Author(s):  
J. Zhang ◽  
Z. Chen ◽  
C. Cheng ◽  
Y. X. Wang
Keyword(s):  
Misfit Dislocation ◽  
Phase Field ◽  
Lattice Mismatch ◽  
Model Simulation ◽  
Rough Surfaces ◽  
Morphology Evolution ◽  
Misfit Dislocations ◽  
Dislocation Generation ◽  
Strain Relief ◽  
Phase Field Crystal

A phase field crystal (PFC) model is employed to study morphology evolution of nanoheteroepitaxy and misfit dislocation generation when applied with enhanced supercooling, lattice mismatch and substrate vicinal angle conditions. Misfit strain that rises due to lattice mismatch causes rough surfaces or misfit dislocations, deteriorates film properties, hence, efforts taken to reveal their microscopic mechanism are significant for film quality improvement. Uniform islands, instead of misfit dislocations, are developed in subcritical thickness film, serving as a way of strain relief by surface mechanism. Misfit dislocations generate when strain relief by surface mechanism is deficient in higher supercooling, multilayers of misfit dislocations dominate, but the number of layers reduces gradually when the supercooling is further enhanced. Rough surfaces like islands or cuspate pits are developed which is ascribed to lattice mismatch, multilayers of misfit dislocations generate to further enhance lattice mismatch. Layers of misfit dislocations generate at a thickening position at enhanced substrate vicinal angle, this further enhancing the angle leading to sporadic generation of misfit dislocations.

A Molecular Dynamics Study of InGaAs Layers on GaAs Substrates

1994 ◽  
Vol 340 ◽  
Author(s):  
G J Moran ◽  
I Morrison ◽  
C C Matthai
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulations ◽  
Elasticity Theory ◽  
Critical Thickness ◽  
Strain Relaxation ◽  
Thin Layers ◽  
Misfit Dislocations ◽  
Strain Relief ◽  
Gaas Substrates ◽  
Dynamics Simulations

ABSTRACTWe have performed molecular dynamics simulations of thin layers of InGaAs on GaAs substrates for different In concentrations to determine the critical thickness before strain relaxation occurs. We have considered both dislocation formation and islanding as possible mechanisms for strain relief. The results for the critical thickness for strain relief by misfit dislocations is slightly lower than that found using elasticity theory. For high In concentrations, facetted islands are found to be stable and are energetically favoured.

Structural properties of GaAs/InGaAs/GaAs (001) and InGaAs/GaAs (001) heterostructures and correlation with electronic properties

1990 ◽  
Vol 48 (4) ◽  
pp. 602-603
Author(s):  
J.M. Bonar ◽  
R. Hull ◽  
R. Malik ◽  
R. Ryan ◽  
J.F. Walker
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Gaas Substrate ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Band Offset ◽  
Misfit Dislocations ◽  
Gaas Substrates ◽  
Gaas Structure ◽  
Low X

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.

Misfit Dislocations in the Ilmenite (FeTiO3)-Hematite (Fe2O3) System

1980 ◽  
Vol 38 ◽  
pp. 212-213 ◽  
Author(s):  
K.P.D. Lagerlöf ◽  
A.H. Heuer ◽  
T.E. Mitchell
Keyword(s):  
Misfit Dislocation ◽  
Lattice Parameters ◽  
Dislocation Network ◽  
Misfit Dislocations ◽  
Space Group ◽  
Two Phases ◽  
Hematite Fe2o3

It has been reported by Lally et. al. [1] that precipitates of hematite (Fe2O3, space group R3c) in a matrix of ilmenite (FeTiO3, space group R3) are lens shaped and flattened along the [0001]-direction. The coherency across the interface is lost by the introduction of a misfit dislocation network, which minimizes the strain due to the deviation in lattice parameters between the two phases [2]. The purpose of this paper is to present a new analysis of this network.

Stars and stripes. Nanoscale misfit dislocation patterns on surfaces

2002 ◽  
Vol 74 (9) ◽  
pp. 1663-1671 ◽  
Author(s):  
Raghani Pushpa ◽  
Shobhana Narasimhan
Keyword(s):  
Surface Structure ◽  
Misfit Dislocation ◽  
Domain Walls ◽  
Chemical Potential ◽  
Model System ◽  
Misfit Dislocations ◽  
Face Centered Cubic ◽  
Hexagonal Close Packed ◽  
Structure Changes ◽  
Face Centered

Close-packed metal surfaces and heteroepitaxial systems frequently display a structure consisting of regularly spaced misfit dislocations, with a network of domain walls separating face-centered cubic (fcc) and hexagonal close-packed (hcp) domains. These structures can serve as templates for growing regularly spaced arrays of nanoislands. We present a theoretical investigation of the factors controlling the size and shape of the domains, using Pt(111) as a model system. Upon varying the chemical potential, the surface structure changes from being unreconstructed to the honeycomb, wavy triangles, "bright stars", or Moiré patterns observed experimentally on Pt(111) and other systems. For the particular case of Pt(111), isotropically contracted star-like patterns are favored over uniaxially contracted stripes.

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