Low threshold 1.55 μm wavelength InAsP/InGaAsP strained multiquantum well laser diode grown by chemical beam epitaxy

1997 ◽  
Vol 71 (1) ◽  
pp. 13-15 ◽  
Author(s):  
J. F. Carlin ◽  
A. V. Syrbu ◽  
C. A. Berseth ◽  
J. Behrend ◽  
A. Rudra ◽  
...  
Keyword(s):  
Laser Diode ◽  
Chemical Beam Epitaxy ◽  
Low Threshold ◽  
Multiquantum Well

Low-threshold-current (~85 mA) of AlGaN-based UV-B laser diode with refractive-index waveguide structure

2021 ◽  
Author(s):  
Shunya Tanaka ◽  
Yuya Ogino ◽  
Kazuki Yamada ◽  
Reo Ogura ◽  
Shohei Teramura ◽  
...  
Keyword(s):  
Refractive Index ◽  
Laser Diode ◽  
Threshold Current ◽  
Waveguide Structure ◽  
Low Threshold

1.3 μm InGaAsP/InP multiquantum well buried heterostructure lasers grown by chemical‐beam epitaxy

1991 ◽  
Vol 59 (24) ◽  
pp. 3084-3086 ◽  
Author(s):  
W. T. Tsang ◽  
F. S. Choa ◽  
R. A. Logan ◽  
T. Tanbun‐Ek ◽  
M. C. Wu ◽  
...  
Keyword(s):  
Chemical Beam Epitaxy ◽  
Buried Heterostructure ◽  
Multiquantum Well

InGaAsP/InP burled crescent laser diode (λ = 1.3 μm) with very low threshold current and fundamental transverse mode

1981 ◽  
Author(s):  
E. Oomura ◽  
H. Higuchi ◽  
R. Hirano ◽  
H. Namizaki ◽  
I. Murotani ◽  
...  
Keyword(s):  
Laser Diode ◽  
Transverse Mode ◽  
Threshold Current ◽  
Low Threshold

Low-threshold 630 nm-band AlGaInP multiquantum-well laser diodes grown on misoriented substrates

1992 ◽  
Vol 28 (10) ◽  
pp. 905-906 ◽  
Author(s):  
M. Shono ◽  
H. Hamada ◽  
S. Honda ◽  
R. Hiroyama ◽  
K. Yodoshi ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Low Threshold ◽  
Multiquantum Well

QUANTUM WELL LASERS AND THEIR APPLICATIONS

1996 ◽  
Vol 07 (03) ◽  
pp. 373-381
Author(s):  
LIANGHUI CHEN
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Mainland China ◽  
Optical Fiber Communication ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Well Lasers ◽  
Material System ◽  
High Modulation ◽  
Low Threshold

Quantum well lasers have attracted a great deal of attention by their many advantages such as low threshold current density, excellent temperature feature, high modulation rate and wavelength adjustability etc. The investigation on quantum well laser in mainland China started in the early 80s. AlGaAs/GaAs QW laser diode and InGaAs/GaAs strained layer QW laser diode have been developed using MBE technology with extremely low threshold current and high T0. Now the growth technologies for QW structure have been expanded to MOCVD technology. Emission wavelengths, on longer wavelength sides have been expanded up to 1.3 µm and 1.55 µm with InGaAsP/InP material system for application in optical fiber communication. On shorter wavelength sides, the emission wavelength has been expanded to lower than 670 nm, for applications in optical information processing. The characteristics of these devices will be demonstrated in this paper. The QW-DFB LD and low-dimension quantum wire and quantum dot lasers are under investigation.

Sign in / Sign up

Export Citation Format

Share Document