Low-threshold 630 nm-band AlGaInP multiquantum-well laser diodes grown on misoriented substrates

1992 ◽  
Vol 28 (10) ◽  
pp. 905-906 ◽  
Author(s):  
M. Shono ◽  
H. Hamada ◽  
S. Honda ◽  
R. Hiroyama ◽  
K. Yodoshi ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Low Threshold ◽  
Multiquantum Well

Ordered Structure in GalnP/AIGalnP Quantum Wells and p-Doped Multiquantum Well AIGalnp Laser Diodes

1991 ◽  
Vol 240 ◽  
Author(s):  
Toshiaki Tanaka ◽  
Hironori Yanagisawa ◽  
Shin-Ichiro Yano ◽  
Shigekazu Minagawa
Keyword(s):  
Quantum Wells ◽  
Hole Concentration ◽  
Laser Diodes ◽  
Ordered Structure ◽  
Transmission Electron ◽  
Zinc Doping ◽  
Low Threshold ◽  
Diffraction Patterns ◽  
20 Nm ◽  
Multiquantum Well

ABSTRACTZinc doping is performed on the GalnP/AIGalnP multiquantum well (MQW) structure with the aim of dissolving the ordered atomic arrangement which results in higher quantum levels and therefore shorter lasing wavelengths. It is shown that the photoluminescence (PL) peak wavelength gradually shortens with doping and decreases by 20 nm when the hole concentration reaches 1×1018 cm−3, while the PL relative intensity becomes half that of an undoped MQW layer. Therefore, a moderate level of zinc doping of around 4∼5×1017 cm−3 is desirable to shorten the PL wavelength without decreasing the crystal quality. Transmission electron nano-diffraction patterns confirm that the ordered structure in the MQW layers disappears as the hole concentration increases. On the basis of this data, uniformly p-doped and modulation p-doped MQW laser diodes are fabricated and their characteristics are compared with the undoped MQW lasers. CW operation is achieved at wavelengths of 631 to 633 nm, which is 10 nm shorter than the 643 nm in an undoped MQW laser. Comparatively low threshold currents of 73 and 88 mA are attained for uniformly p-doped and modulation p-doped MQW lasers, respectively. However, they are about 20∼30 mA higher than those of the undoped MQW lasers. This results from the large overflow of electrons from the active layer, and the fact that the differential gain becomes smaller in the 630-nm band.

Low-threshold-current 670 nm multiquantum-well laser diodes

1994 ◽  
Vol 30 (25) ◽  
pp. 2140-2142 ◽  
Author(s):  
H. Fujii ◽  
H. Makita ◽  
H. Yoshii ◽  
H. Yamada ◽  
T. Kishi ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Threshold Current ◽  
Low Threshold ◽  
Multiquantum Well

High-power operation of 630 nm-band tensile strained multiquantum-well AlGaInP laser diodes with a multiquantum barrier

1993 ◽  
Vol 29 (11) ◽  
pp. 1010-1011 ◽  
Author(s):  
M. Shono ◽  
S. Honda ◽  
T. Ikegami ◽  
Y. Bessyo ◽  
R. Hiroyama ◽  
...  
Keyword(s):  
High Power ◽  
Laser Diodes ◽  
High Power Operation ◽  
Power Operation ◽  
Multiquantum Well

High‐peak‐power low‐threshold AlGaAs/GaAs stripe laser diodes on Si substrates grown by migration‐enhanced molecular beam epitaxy

1988 ◽  
Vol 53 (14) ◽  
pp. 1248-1250 ◽  
Author(s):  
Jae‐Hoon Kim ◽  
Akbar Nouhi ◽  
Gouri Radhakrishnan ◽  
John K. Liu ◽  
Robert J. Lang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Peak Power ◽  
Molecular Beam ◽  
Laser Diodes ◽  
High Peak ◽  
High Peak Power ◽  
Si Substrates ◽  
Low Threshold ◽  
Stripe Laser

Longitudinal mode spectra and ultrashort pulse generation of InGaN multiquantum well structure laser diodes

1997 ◽  
Vol 70 (5) ◽  
pp. 616-618 ◽  
Author(s):  
Shuji Nakamura ◽  
Masayuki Senoh ◽  
Shin-ichi Nagahama ◽  
Naruhito Iwasa ◽  
Takao Yamada ◽  
...  
Keyword(s):  
Ultrashort Pulse ◽  
Laser Diodes ◽  
Longitudinal Mode ◽  
Pulse Generation ◽  
Ultrashort Pulse Generation ◽  
Structure Laser ◽  
Multiquantum Well
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