Midinfrared lasers and light-emitting diodes with InAsSb/InAsP strained-layer superlattice active regions

1997 ◽  
Vol 70 (24) ◽  
pp. 3188-3190 ◽  
Author(s):  
S. R. Kurtz ◽  
A. A. Allerman ◽  
R. M. Biefeld
Keyword(s):  
Light Emitting Diodes ◽  
Active Regions ◽  
Light Emitting ◽  
Strained Layer ◽  
Strained Layer Superlattice

Room-temperature InAsSb strained-layer superlattice light-emitting diodes at λ=4.2 μm with AlSb barriers for improved carrier confinement

1999 ◽  
Vol 74 (16) ◽  
pp. 2384-2386 ◽  
Author(s):  
M. J. Pullin ◽  
H. R. Hardaway ◽  
J. D. Heber ◽  
C. C. Phillips ◽  
W. T. Yuen ◽  
...  
Keyword(s):  
Room Temperature ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Strained Layer ◽  
Carrier Confinement ◽  
Strained Layer Superlattice

scholarly journals Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays

Micromachines ◽  
2019 ◽  
Vol 10 (8) ◽  
pp. 492 ◽  
Author(s):  
Ha Quoc Thang Bui ◽  
Ravi Teja Velpula ◽  
Barsha Jain ◽  
Omar Hamed Aref ◽  
Hoang-Duy Nguyen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
High Performance ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Light Emission ◽  
Active Regions ◽  
Core Shell ◽  
Next Generation ◽  
Light Emitting ◽  
Full Color

We have demonstrated full-color and white-color micro light-emitting diodes (μLEDs) using InGaN/AlGaN core-shell nanowire heterostructures, grown on silicon substrate by molecular beam epitaxy. InGaN/AlGaN core-shell nanowire μLED arrays were fabricated with their wavelengths tunable from blue to red by controlling the indium composition in the device active regions. Moreover, our fabricated phosphor-free white-color μLEDs demonstrate strong and highly stable white-light emission with high color rendering index of ~ 94. The μLEDs are in circular shapes with the diameter varying from 30 to 100 μm. Such high-performance μLEDs are perfectly suitable for the next generation of high-resolution micro-display applications.

Novel Technique for Reliable AlGaAs/GaAs Light Emitting Diodes on Si Using GaAs Islands Active Regions

1995 ◽  
Vol 196-201 ◽  
pp. 1933-1938
Author(s):  
Yuki Hasegawa ◽  
Takashi Egawa ◽  
Takashi Jimbo ◽  
Masayoshi Umeno
Keyword(s):  
Light Emitting Diodes ◽  
Active Regions ◽  
Light Emitting ◽  
Novel Technique

InNxSb1−x Light Emitting Diodes Grown by MBE

1999 ◽  
Vol 607 ◽  
Author(s):  
A. D. Johnson ◽  
R. H. Bennett ◽  
J. Newey ◽  
G J Pryce ◽  
G M Williams ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Electron Cyclotron Resonance ◽  
Secondary Ion Mass Spectrometry ◽  
Active Regions ◽  
Plasma Source ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Light Emitting ◽  
Ecr Plasma ◽  
Transmission Electron

We present the first reported MBE growth of light emitting diodes (LED's) with active regions made up of InSb/ InNxSbl−x (O<x<0.02) superlattices, grown onto InSb(100) substrates. Such dilute alloys of nitrogen in other III-V materials have been shown to exhibit very large bandgap bowing parameters due to differences in atomic size and the electro-negativity of nitrogen. Novel growth techniques have been developed to enable epitaxy of high quality InNxSbl−x, using an electron cyclotron resonance (ECR) plasma source. Material characterisation was performed by double crystal x-ray diffraction (DXRD) and transmission electron microscopy (TEM), and nitrogen composition has been determined using DXRD and secondary ion mass spectrometry (SIMS). To determine the effect of nitrogen on bandgap, the structures have been fabricated into LED's with InSb/InNxSbl−x superlattice active regions with period ∼1100A. For a nitrogen content of ∼0.3%, the peak emission of the diodes shifts from ∼6pm to >71µm at room temperature.

Deep ultraviolet emitting polarization induced nanowire light emitting diodes with AlxGa1−xN active regions

2014 ◽  
Vol 25 (45) ◽  
pp. 455201 ◽  
Author(s):  
Thomas F Kent ◽  
Santino D Carnevale ◽  
A T M Sarwar ◽  
Patrick J Phillips ◽  
Robert F Klie ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Active Regions ◽  
Light Emitting ◽  
Deep Ultraviolet

scholarly journals UVA and UVB light emitting diodes with Al y Ga1−y N quantum dot active regions covering the 305–335 nm range

2018 ◽  
Vol 33 (7) ◽  
pp. 075007 ◽  
Author(s):  
J Brault ◽  
M Al Khalfioui ◽  
S Matta ◽  
B Damilano ◽  
M Leroux ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Active Regions ◽  
Light Emitting ◽  
Nm Range

Time of carrier escape and recombination coefficients in InGaN quantum-well active regions of blue, cyan, and green light-emitting diodes

2018 ◽  
Vol 34 (1) ◽  
pp. 015007 ◽  
Author(s):  
I Reklaitis ◽  
L Krencius ◽  
T Malinauskas ◽  
S Yu Karpov ◽  
H J Lugauer ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Active Regions ◽  
Light Emitting ◽  
Carrier Escape
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