Photo- and electro-luminescence studies of uncooled arsenic-rich In(As,Sb) strained layer superlattice light-emitting diodes for the 4-12-μm band

Author(s):  
Patrick J. Tang ◽  
Mark J. Pullin ◽  
S. J. Chung ◽  
Christopher C. Phillips ◽  
R. A. Stradling ◽  
...  
1999 ◽  
Vol 74 (16) ◽  
pp. 2384-2386 ◽  
Author(s):  
M. J. Pullin ◽  
H. R. Hardaway ◽  
J. D. Heber ◽  
C. C. Phillips ◽  
W. T. Yuen ◽  
...  

2006 ◽  
Vol 955 ◽  
Author(s):  
Ramya Chandrasekaran ◽  
Anirban Bhattacharyya ◽  
Ryan France ◽  
Christos Thomidis ◽  
Adrian Williams ◽  
...  

ABSTRACTIn this paper, we report the growth and fabrication of non-polar A-plane AlGaN multiple quantum well based ultraviolet light emitting diodes (UV-LEDs). The LEDs were grown on R-plane sapphire substrates using molecular beam epitaxy (MBE). The Current-voltage characteristics of the fabricated devices demonstrated rectifying behavior with a series resistance of 38 ohms. An electro-luminescence emission at 338 nm was obtained.


2005 ◽  
Vol 202 (9) ◽  
pp. 1869-1873 ◽  
Author(s):  
Jaehee Cho ◽  
Cheolsoo Sone ◽  
Yongjo Park ◽  
Euijoon Yoon

Sign in / Sign up

Export Citation Format

Share Document