Mid-infrared (3.3-3.9 /spl mu/m) lasers and light-emitting diodes with type-II "W" InAs(P,Sb)/InAsSb active regions

2000 ◽  
Author(s):  
A. Stein ◽  
A. Behres ◽  
J. Kluth ◽  
K. Heime ◽  
P. Christol ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Active Regions ◽  
Type Ii ◽  
Mid Infrared ◽  
Light Emitting

Room temperature thermo-electric pumping in mid-infrared light-emitting diodes

2013 ◽  
Vol 103 (18) ◽  
pp. 183513 ◽  
Author(s):  
Parthiban Santhanam ◽  
Duanni Huang ◽  
Rajeev J. Ram ◽  
Maxim A. Remennyi ◽  
Boris A. Matveev
Keyword(s):  
Room Temperature ◽  
Light Emitting Diodes ◽  
Infrared Light ◽  
Thermo Electric ◽  
Mid Infrared ◽  
Light Emitting

Designs of blue and green light-emitting diodes based on type-II InGaN-ZnGeN2 quantum wells

2016 ◽  
Vol 120 (10) ◽  
pp. 103102 ◽  
Author(s):  
Lu Han ◽  
Kathleen Kash ◽  
Hongping Zhao
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Type Ii ◽  
Light Emitting

scholarly journals Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays

Micromachines ◽  
2019 ◽  
Vol 10 (8) ◽  
pp. 492 ◽  
Author(s):  
Ha Quoc Thang Bui ◽  
Ravi Teja Velpula ◽  
Barsha Jain ◽  
Omar Hamed Aref ◽  
Hoang-Duy Nguyen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
High Performance ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Light Emission ◽  
Active Regions ◽  
Core Shell ◽  
Next Generation ◽  
Light Emitting ◽  
Full Color

We have demonstrated full-color and white-color micro light-emitting diodes (μLEDs) using InGaN/AlGaN core-shell nanowire heterostructures, grown on silicon substrate by molecular beam epitaxy. InGaN/AlGaN core-shell nanowire μLED arrays were fabricated with their wavelengths tunable from blue to red by controlling the indium composition in the device active regions. Moreover, our fabricated phosphor-free white-color μLEDs demonstrate strong and highly stable white-light emission with high color rendering index of ~ 94. The μLEDs are in circular shapes with the diameter varying from 30 to 100 μm. Such high-performance μLEDs are perfectly suitable for the next generation of high-resolution micro-display applications.

Cascading, efficiency, and broadband emission in mid-infrared Superlattice Light Emitting Diodes (SLEDs)

2017 ◽  
Author(s):  
J. P. Prineas ◽  
R. J. Ricker ◽  
A. Muhowski ◽  
C. Bogh ◽  
S. Provence ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Mid Infrared ◽  
Light Emitting ◽  
Broadband Emission

scholarly journals High-pressure measurements of mid-infrared electroluminescence from InAs light-emitting diodes at 3.3 μm

2003 ◽  
Vol 82 (8) ◽  
pp. 1149-1151 ◽  
Author(s):  
S. A. Choulis ◽  
A. Andreev ◽  
M. Merrick ◽  
A. R. Adams ◽  
B. N. Murdin ◽  
...  
Keyword(s):  
High Pressure ◽  
Light Emitting Diodes ◽  
Pressure Measurements ◽  
Mid Infrared ◽  
Light Emitting

Pentenary GaInAsPSb for mid-infrared light-emitting diodes and lasers grown by liquid phase epitaxy

2007 ◽  
Author(s):  
V. M. Smirnov ◽  
P. J. Batty ◽  
A. Krier ◽  
R. Jones ◽  
V. I. Vasil'ev ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Light Emitting Diodes ◽  
Infrared Light ◽  
Mid Infrared ◽  
Light Emitting

High power cascaded mid-infrared InAs/GaSb light emitting diodes on mismatched GaAs

2015 ◽  
Vol 118 (12) ◽  
pp. 123108 ◽  
Author(s):  
S. R. Provence ◽  
R. Ricker ◽  
Y. Aytac ◽  
T. F. Boggess ◽  
J. P. Prineas
Keyword(s):  
High Power ◽  
Light Emitting Diodes ◽  
Mid Infrared ◽  
Light Emitting
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