Influence of substitutional carbon incorporation on implanted-indium-related defects and transient enhanced diffusion

2003 ◽  
Vol 83 (20) ◽  
pp. 4169-4171 ◽  
Author(s):  
Chung Foong Tan ◽  
Eng Fong Chor ◽  
Jinping Liu ◽  
Hyeokjae Lee ◽  
Elgin Quek ◽  
...  
Keyword(s):  
Carbon Incorporation ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion

Suppression of Boron Transient Enhanced Diffusion in SiGe HBTs by Carbon Incorporation

1997 ◽  
Vol 469 ◽  
Author(s):  
L. D. Lanzerotti ◽  
J. C. Sturm ◽  
E. Stach ◽  
R. Hull ◽  
T. Buyuklimanli ◽  
...  
Keyword(s):  
Thermal Diffusion ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Electrical Characteristics ◽  
Carbon Incorporation ◽  
Carbon Fractions ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Heavily Doped

ABSTRACTIn this paper we demonstrate, using both SIMS and transistor electrical characteristics, that substitutional carbon fractions of 0.5% in heavily doped Si0.8Ge0.2 base heterojunction bipolar transistors (HBTs) reduce both thermal diffusion and transient enhanced diffusion (TED) of boron. Furthermore we show that carbon suppresses TED of boron in carbon-free regions that surround the carbon layers.

Quantitative Measurement of Reduction of Boron Diffusion by Substitutional Carbon Incorporation

1998 ◽  
Vol 527 ◽  
Author(s):  
M. S. Carroll ◽  
L. D. Lanzerotti ◽  
J. C. Sturm
Keyword(s):  
Quantitative Measurement ◽  
Device Modeling ◽  
Electrical Characteristics ◽  
Boron Diffusion ◽  
Carbon Incorporation ◽  
Combined Process ◽  
Enhanced Diffusion ◽  
Interstitial Concentration ◽  
Transient Enhanced Diffusion ◽  
Boron Diffusivity

ABSTRACTRecently, the suppression of boron diffusion due to both thermal and transient enhanced diffusion (TED) has been demonstrated through the incorporation of 0.5% substitutional carbon in the base of Si/SiGe/Si heterojunction transistor's (HBT)[1,2]. Because the devices are sensitive to diffusion on a scale less than that we can detect with SIMS, in this paper combined process and device modeling (TMA TSUPREM4 and MEDICI) are used to relate observed electrical characteristics (collector saturation currents and Early voltages) of the HBT's to boron diffusion, with a sensitivity of 20-30Å. Boron diffusivity in the SiGeC base is ~8 times slower than that of the boron diffusivity in the SiGe base without implant damage (no TED). In the case of ion implant damage in an overlying layer to cause TED the excess interstitial concentration due to ion implant damage is reduced by approximately 99% through incorporation of 0.5% substitutional carbon in the HBT SiGe bases. This demonstrates that carbon incorporation acts as an effective sink for interstitials.

Suppression of boron transient enhanced diffusion in SiGe heterojunction bipolar transistors by carbon incorporation

1997 ◽  
Vol 70 (23) ◽  
pp. 3125-3127 ◽  
Author(s):  
L. D. Lanzerotti ◽  
J. C. Sturm ◽  
E. Stach ◽  
R. Hull ◽  
T. Buyuklimanli ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Carbon Incorporation ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion

scholarly journals Enhanced Diffusion of Dopants in Vacancy Supersaturation Produced by MeV Implantation

1997 ◽  
Vol 469 ◽  
Author(s):  
V. C. Venezia ◽  
T. E. Haynes ◽  
A. Agarwal ◽  
H. -J. Gossmann ◽  
D. J. Eaglesham
Keyword(s):  
Surface Layer ◽  
Surface Region ◽  
Silicon On Insulator ◽  
Rich Region ◽  
Near Surface ◽  
Enhanced Diffusion ◽  
Float Zone ◽  
Transient Enhanced Diffusion

ABSTRACTThe diffusion of Sb and B markers has been studied in vacancy supersaturations produced by MeV Si implantation in float zone (FZ) silicon and bonded etch-back silicon-on-insulator (BESOI) substrates. MeV Si implantation produces a vacancy supersaturated near-surface region and an interstitial-rich region at the projected ion range. Transient enhanced diffusion (TED) of Sb in the near surface layer was observed as a result of a 2 MeV Si+, 1×1016/cm2, implant. A 4× larger TED of Sb was observed in BESOI than in FZ silicon, demonstrating that the vacancy supersaturation persists longer in BESOI than in FZ. B markers in samples with MeV Si implant showed a factor of 10× smaller diffusion relative to markers without the MeV Si+ implant. This data demonstrates that a 2 MeV Si+ implant injects vacancies into the near surface region.

Ultra Shallow Junction Formation by B+/BF2+ Implantation at Energy of 0.5 KEV

1998 ◽  
Vol 532 ◽  
Author(s):  
M. Kase ◽  
Y Kikuchi ◽  
H. Niwa ◽  
T. Kimura
Keyword(s):  
Junction Depth ◽  
Shallow Junction ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Junction Formation

ABSTRACTThis paper describes ultra shallow junction formation using 0.5 keV B+/BF2+ implantation, which has the advantage of a reduced channeling tail and no transient enhanced diffusion. In the case of l × 1014 cm−2, 0.5 keV BF2 implantation a junction depth of 19 nm is achieved after RTA at 950°C.

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