Gas‐phase transport of WF6 through annular nanopipes in TiN during chemical vapor deposition of W on TiN/Ti/SiO2 structures for integrated circuit fabrication

1996 ◽  
Vol 69 (21) ◽  
pp. 3179-3181 ◽  
Author(s):  
G. Ramanath ◽  
J. R. A. Carlsson ◽  
J. E. Greene ◽  
L. H. Allen ◽  
V. C. Hornback ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Integrated Circuit ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Integrated Circuit Fabrication ◽  
Circuit Fabrication ◽  
Gas Phase Transport ◽  
Phase Transport

Surface Photochemically Activated Chemical Vapor Deposition of Patterned Aluminum Thin Films

1986 ◽  
Vol 75 ◽  
Author(s):  
G. S. Higashi ◽  
G. E. Blonder ◽  
C. G. Fleming
Keyword(s):  
Integrated Circuit ◽  
Vapor Deposition ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Catalytic Decomposition ◽  
Deposition Technique ◽  
Integrated Circuit Fabrication ◽  
Circuit Fabrication ◽  
Krf Excimer Laser ◽  
Inert Surfaces

AbstractKrF excimer laser (248 nm) images of mask patterns have been Iused to photochemically activate tihe surface catalytic decomposition of triisobutylaluminum (TIBA). The activation step is shown to involve the photolysis of organoaluminum surface adlayers leading to the formation of reactive Al sites. These sites serve to selectively nucleate the thermal decomposition of TIBA which results in the growth of high quality Al filns (resistivities ∼5 μΩ-cm). The growth on the chemically inert surfaces of SiO2 and Al2O3 is extremely selective and results in patterns with resolutions ∼2 μm. To evaluate the utility of this process for real circuit applications, the laser activated deposition technique has been used in conjunction with standard photolithographic processing to fabricate metal-oxide field effect transistors and Al interconnects. The successful fabrication of working devices indicates that the laser activated deposition technique is compatible with standard photolithographic patterning schemes and may provide a means for simplifying integrated circuit fabrication.

scholarly journals Gas Phase Chemistry of Trimethylboron in Thermal Chemical Vapor Deposition

2017 ◽  
Vol 121 (47) ◽  
pp. 26465-26471 ◽  
Author(s):  
Mewlude Imam ◽  
Laurent Souqui ◽  
Jan Herritsch ◽  
Andreas Stegmüller ◽  
Carina Höglund ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thermal Chemical Vapor Deposition ◽  
Gas Phase Chemistry ◽  
Phase Chemistry

scholarly journals Gas-phase aluminium acetylacetonate decomposition: Revision of the current mechanism by VUV synchrotron radiation

2021 ◽  
Author(s):  
Sebastian Grimm ◽  
Seung-Jin Baik ◽  
Patrick Hemberger ◽  
Andras Bodi ◽  
Andreas Kempf ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Synchrotron Radiation ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Aluminium Oxide ◽  
Chemical Vapor ◽  
Phase Decomposition ◽  
Common Precursor ◽  
Current Mechanism

Although aluminium acetylacetonate, Al(C5H7O2)3, is a common precursor for chemical vapor deposition (CVD) of aluminium oxide, its gas phase decomposition is not very well investigated. Here, we studied its thermal...

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