Evidence of a gas phase transport mechanism for Si incorporation in the metalorganic chemical vapor deposition of GaAs

1989 ◽  
Vol 55 (20) ◽  
pp. 2090-2092 ◽  
Author(s):  
T. George ◽  
E. R. Weber ◽  
S. Nozaki ◽  
J. J. Murray ◽  
A. T. Wu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Transport Mechanism ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Gas Phase Transport ◽  
Phase Transport ◽  
Metalorganic Chemical

A Kinetic Model for Metalorganic Chemical Vapor Deposition of GaAs from Trimethylgallium and Arsine

1988 ◽  
Vol 131 ◽  
Author(s):  
Triantafillos J. Mountziaris ◽  
Klavs F. Jensen
Keyword(s):  
Chemical Vapor Deposition ◽  
Kinetic Model ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Transport Model ◽  
Surface Reactions ◽  
Experimental Studies ◽  
Chemical Vapor ◽  
Metalorganic Chemical

ABSTRACTA kinetic model for metalorganic chemical vapor deposition (MOCVD) of GaAs from trimethylgallium and arsine is presented. The proposed mechanism includes 15 gas-phase species, 17 gas-phase reactions, 9 surface species and 29 surface reactions. The surface reactions take into account different crystallographic orientations of the GaAs substrate. Sensitivity analysis and existing experimental observations have been used to develop the reduced mechanism from the large number of reactions that might in principle occur. Rate constants are estimated by using thermochemical methods and reported experimental data. The kinetic mechanism is combined with a two-dimensional transport model of a hot-wall tubular reactor used in experimental studies. Model predictions of gas-phase composition and GaAs growth rates show good agreement with published experimental studies. In addition, the model predicts reported trends in carbon incorporation.

scholarly journals Metalorganic chemical vapor deposition of InN quantum dots and nanostructures

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Caroline E. Reilly ◽  
Stacia Keller ◽  
Shuji Nakamura ◽  
Steven P. DenBaars
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Chemical Vapor ◽  
Electromagnetic Spectrum ◽  
Material System ◽  
Metalorganic Chemical

AbstractUsing one material system from the near infrared into the ultraviolet is an attractive goal, and may be achieved with (In,Al,Ga)N. This III-N material system, famous for enabling blue and white solid-state lighting, has been pushing towards longer wavelengths in more recent years. With a bandgap of about 0.7 eV, InN can emit light in the near infrared, potentially overlapping with the part of the electromagnetic spectrum currently dominated by III-As and III-P technology. As has been the case in these other III–V material systems, nanostructures such as quantum dots and quantum dashes provide additional benefits towards optoelectronic devices. In the case of InN, these nanostructures have been in the development stage for some time, with more recent developments allowing for InN quantum dots and dashes to be incorporated into larger device structures. This review will detail the current state of metalorganic chemical vapor deposition of InN nanostructures, focusing on how precursor choices, crystallographic orientation, and other growth parameters affect the deposition. The optical properties of InN nanostructures will also be assessed, with an eye towards the fabrication of optoelectronic devices such as light-emitting diodes, laser diodes, and photodetectors.

Sign in / Sign up

Export Citation Format

Share Document