scholarly journals GAS PHASE REACTION IN SYNTHESIS OF SiC FILMS BY LOW PRESSURE CHEMICAL VAPOR DEPOSITION FROM Si2H6 AND C2H2 AT 873 K

1991 ◽  
Vol 02 (C2) ◽  
pp. C2-87-C2-93
Author(s):  
L.-S. HONG ◽  
Y. SHIMOGAKI ◽  
H. KOMIYAMA
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Phase Reaction ◽  
Gas Phase Reaction ◽  
Pressure Chemical ◽  
Sic Films

Homogeneous Gas Phase Nucleation of Silane in Low Pressure Chemical Vapor Deposition (LPCVD)

1988 ◽  
Vol 135 (9) ◽  
pp. 2378-2379 ◽  
Author(s):  
Z. M. Qian ◽  
H. Michiel ◽  
A. Van Ammel ◽  
J. Nijs ◽  
R. Mertens
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical ◽  
Phase Nucleation

Properties of Single-Crystalline SiC Films Grown on Si by Low-Pressure Chemical Vapor Deposition at 750°C

1992 ◽  
Vol 282 ◽  
Author(s):  
I. Golecki ◽  
J. Marti ◽  
F. Reidinger
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Double Crystal ◽  
X Ray ◽  
Si Substrates ◽  
Pressure Chemical ◽  
Means Of Transmission ◽  
Sic Films

ABSTRACTMonocrystalline, epitaxial cubic (100) SiC films have been grown on (100) Si substrates at 750°C, the lowest temperature reported to date, by low-pressure chemical vapor deposition, using methylsilane, SiCH3H3, a single precursor with a Si:C ratio of 1:1, and H2. Hexagonal SiC films were obtained with the aid of a remote H2 plasma, which also increased the deposition rate through a reduction in the activation enthalpy. The films were characterized by means of transmission electron microscopy, single- and double-crystal X-ray diffraction, infra-red absorption, ellipsometry, thickness measurements, four-point probe measurements, and other methods. Based on X-ray diffractometry, the crystalline quality of our β-SiC films is equivalent to that of commercial films of similar thickness. We describe the novel growth apparatus and the properties of the films.

Nitrogen-Doping of Polycrystalline 3C-SiC Films Deposited by Low Pressure Chemical Vapor Deposition

2006 ◽  
Vol 527-529 ◽  
pp. 311-314 ◽  
Author(s):  
Xiao An Fu ◽  
Jacob Trevino ◽  
Mehran Mehregany ◽  
Christian A. Zorman
Keyword(s):  
Residual Stress ◽  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Atom Concentration ◽  
Pressure Chemical ◽  
Sic Films

This paper reports the effect of deposition temperature on the deposition rate, residual stress, and resistivity of in-situ nitrogen-doped (N-doped) polycrystalline 3C-SiC (poly-SiC) films deposited by low pressure chemical vapor deposition (LPCVD). N-doped poly-SiC films were deposited in a high-throughput, resistively-heated, horizontal LPCVD furnace capable of holding up to 150 mm-diameter substrates using SiH2Cl2 (100%) and C2H2 (5% in H2) precursors, with NH3 (5% in H2) as the doping gas. The deposition rate increased, while the residual stress decreased significantly as the deposition temperature increased from 825oC to 900°C. The resistivity of the films decreased significantly from 825°C to 850°C. Above 850°C, although the resistivity still decreased, the change was much smaller than at lower temperatures. XRD patterns indicated a polycrystalline (111) 3C-SiC texture for all films deposited in the temperature range studied. SIMS depth profiles indicated a constant nitrogen atom concentration of 2.6×1020/cm3 in the intentionally doped films deposited at 900°C. The nitrogen concentration of unintentionally doped films (i.e., when NH3 gas flow was zero) deposited at 900°C was on the order of 1017/cm3. The doped films deposited at 900°C exhibited a resistivity of 0.02 -cm and a tensile residual stress of 59 MPa, making them very suitable for use as a mechanical material supporting microelectromechanical systems (MEMS) device development.

Modeling of the elementary gas‐phase reaction during chemical vapor deposition of silicon carbide from CH 3 SiCl 3 /H 2

2020 ◽  
Vol 52 (6) ◽  
pp. 359-367
Author(s):  
Noboru Sato ◽  
Yuichi Funato ◽  
Yasuyuki Fukushima ◽  
Takeshi Momose ◽  
Mitsuo Koshi ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Phase Reaction ◽  
Gas Phase Reaction
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