Excimer laser crystallization and doping of source and drain regions in high quality amorphous silicon thin film transistors

1996 ◽  
Vol 69 (25) ◽  
pp. 3857-3859 ◽  
Author(s):  
E. A. Al‐Nuaimy ◽  
J. M. Marshall
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
Laser Crystallization ◽  
Silicon Thin Film ◽  
High Quality ◽  
Excimer Laser Crystallization

Noise performances in polycrystalline silicon thin-film transistors fabricated by excimer laser crystallization

1997 ◽  
Vol 71 (5) ◽  
pp. 578-580 ◽  
Author(s):  
R. Carluccio ◽  
A. Corradetti ◽  
G. Fortunato ◽  
C. Reita ◽  
P. Legagneux ◽  
...  
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Laser Crystallization ◽  
Silicon Thin Film ◽  
Excimer Laser Crystallization

High-Performance Recessed-Channel Germanium Thin-Film Transistors via Excimer Laser Crystallization

2018 ◽  
Vol 39 (3) ◽  
pp. 367-370 ◽  
Author(s):  
Chan-Yu Liao ◽  
Shih-Hung Chen ◽  
Wen-Hsien Huang ◽  
Chang-Hong Shen ◽  
Jia-Min Shieh ◽  
...  
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
High Performance ◽  
Laser Crystallization ◽  
Excimer Laser Crystallization ◽  
Recessed Channel

Carrier Transport in Polycrystalline and Amorphous Silicon Thin Film Transistors

1994 ◽  
Vol 358 ◽  
Author(s):  
T. Sameshima ◽  
M. Sekiya ◽  
M. Hara ◽  
N. Sano ◽  
A. Kohno
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Carrier Transport ◽  
Defect Density ◽  
Inversion Layer ◽  
Chemical Vapor ◽  
Laser Crystallization ◽  
Silicon Thin Film ◽  
Plasma Chemical Vapor Deposition

ABSTRACTThe technologies of laser crystallization and methods of SiO2 formation in remote plasma chemical vapor deposition or SiO evaporation with an oxygen ambient realize the fabrication of n-channel polycrystalline and amorphous silicon thin film transistors (poly-Si and a-Si TFTs) at a temperature lower than 300 °C. The defect density was achieved to be 2∼3×1011 cm−2eV−1 and threshold voltage was about IV for both TFTs. The maximum field effect mobility was 600 cm2/Vs for poly-Si TFTs and 2.6 cm2/Vs for a-Si TFTs. The mobility of poly-Si TFT decreased as the gate voltage increases. This is interpreted as that the electrons are confined in the narrow inversion layer and electron scattering with phonon is enhanced for higher normal electric field.

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