Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena

1996 ◽  
Vol 68 (3) ◽  
pp. 409-411 ◽  
Author(s):  
M. Jaraiz ◽  
G. H. Gilmer ◽  
J. M. Poate ◽  
T. D. de la Rubia
Keyword(s):  
Ion Implantation ◽  
Point Defect ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Atomistic Calculations ◽  
Diffusion Phenomena

Suppression of transient enhanced diffusion following in situ photoexcitation during boron ion implantation

1995 ◽  
Vol 67 (15) ◽  
pp. 2158-2160 ◽  
Author(s):  
J. Ravi ◽  
Yu. Erokhin ◽  
G. A. Rozgonyi ◽  
C. W. White
Keyword(s):  
Ion Implantation ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion

A Comprehensive Model for Carbon Suppression of Boron Transient Enhanced Diffusion

2001 ◽  
Vol 669 ◽  
Author(s):  
Julie L. Ngau ◽  
Peter B. Griffin ◽  
James D. Plummer
Keyword(s):  
Point Defect ◽  
Recent Work ◽  
Comprehensive Model ◽  
Pairing Mechanism ◽  
Diffusion Behavior ◽  
Interstitial Carbon ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Single Temperature ◽  
Carbon Interstitial

ABSTRACTIn this work, the time evolution of B transient enhanced diffusion (TED) suppression due to the incorporation of 0.018% substitutional carbon in silicon was studied. The combination of having low C concentrations, which reduce B TED without completely eliminating it, and having diffused B profiles for several times at a single temperature provides much data upon which various models for the suppression of B TED can be tested. Recent work in the literature has indicated that the suppression of B TED in C-rich Si is caused by non-equilibrium Si point defect concentrations, specifically the undersaturation of Si self-interstitials, that result from the coupled out-diffusion of carbon interstitials via the kick-out and Frank-Turnbull reactions. Attempts to model our data with these two reactions revealed that the time evolved diffusion behavior of B was not accurately simulated and that an additional reaction that further reduces the Si self-inter- stitial concentration was necessary. In this work, we incorporate a carbon interstitial, carbon substitutional (CiCs) pairing mechanism into a comprehensive model that includes the C kick-out reaction, C Frank-Turnbull reaction, {311} defects, and boron interstitial clusters (BICs) and demonstrate that this model successfully simulates C suppression of B TED at 750 °C for anneal times ranging from 10 s to 60 min.

Modeling of TED Point Defect Paramater Extraction

2002 ◽  
Vol 717 ◽  
Author(s):  
Heidi Meyer ◽  
Scott T. Dunham
Keyword(s):  
Point Defect ◽  
Diffusion Capacity ◽  
Enhanced Diffusion ◽  
Self Diffusion ◽  
Transient Enhanced Diffusion ◽  
Two Factors

AbstractThe work investigates simple transient enhanced diffusion (TED) behavior, which is a reflection of the interstitial behavior in the system. The analysis shows that TED depends mainly on two factors: the intial demage profiles and the DICI product. We find that, based on these two inputs, the extent of TED can be accurately diffusion capacity (DICI) which is compared to values previously extracted from diffcusion and silicon self-diffusion experiments.

Transient enhanced diffusion of aluminum in SiC during high temperature ion implantation

1999 ◽  
Vol 86 (11) ◽  
pp. 6039-6042 ◽  
Author(s):  
I. O. Usov ◽  
A. A. Suvorova ◽  
V. V. Sokolov ◽  
Y. A. Kudryavtsev ◽  
A. V. Suvorov
Keyword(s):  
High Temperature ◽  
Ion Implantation ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion

Junction Depth Reduction of ion Implanted Boron in Silicon Through Fluorine ion Implantation

2000 ◽  
Vol 610 ◽  
Author(s):  
L. S. Robertson ◽  
P. N. Warnes ◽  
K. S. Jones ◽  
S. K. Earles ◽  
M. E. Law ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Secondary Ion Mass Spectrometry ◽  
Chemical Species ◽  
Amorphous Layer ◽  
Experimental Conditions ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Transmission Electron ◽  
Species Effect ◽  
Boron Diffusivity

AbstractThe interaction between boron and excess silicon interstitials caused by ion implantation hinders the formation of ultra-shallow, low resistivity junctions. Previous studies have shown that fluorine reduces boron transient enhanced diffusion, however it is unclear whether this observed phenomenon is due to the fluorine interacting with the boron atoms or silicon self-interstitials. Amorphization of a n-type Czochralski wafer was achieved with a 70 keV Si+ implantation at a dose of 1×1015/cm2. The Si+ implant produced a 1500Å deep amorphous layer, which was then implanted with 1.12 keV 1×1015/cm2 B+. The samples were then implanted with a dose of 2×1015/cm2F+ at various energies ranging from 2 keV to 36 keV. Ellipsometry measurements showed no increase in the amorphous layer thickness from either the boron or fluorine implants. The experimental conditions allowed the chemical species effect to be studied independent of the implant damage caused by the fluorine implant. Post-implantation anneals were performed in a tube furnace at 750° C. Secondary ion mass spectrometry was used to monitor the dopant diffusion after annealing. Transmission electron microscopy (TEM) was used to study the end-of-range defect evolution. The addition of fluorine reduces the boron transient enhanced diffusion for all fluorine energies. It was observed that both the magnitude of the boron diffusivity and the concentration gradient of the boron profile vary as a function of fluorine energy.

Point defect Supersaturation and Enhanced Diffusion in SPE Regrown Silicon.

1983 ◽  
Vol 27 ◽  
Author(s):  
S. J. Pennycook ◽  
J. Narayan ◽  
O. W. Holland
Keyword(s):  
Activation Energy ◽  
Point Defect ◽  
Solid Phase ◽  
High Concentration ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Migration Enthalpy

ABSTRACTTransient, greatly enhanced diffusion has been observed on annealing solid-phase-epitaxial (SPE) grown Si-Sb alloys. This is shown to be due to a high concentration of interstitials being trapped during SPE regrowth. The migration enthalpy, for diffusion of Sb by an interstitialcy mechanism was measured as 1.8 ± 0.2 eV. The interstitials eventually condensed into loops, marking the end of the transient. In a SPE grown Si-Bi alloy a similar transient enhanced diffusion was observed, with an activation energy of 2.0 ± 0.2 eV, but no loops formed.

Transient enhanced diffusion from decaborane molecular ion implantation

1998 ◽  
Vol 73 (14) ◽  
pp. 2015-2017 ◽  
Author(s):  
Aditya Agarwal ◽  
H.-J. Gossmann ◽  
D. C. Jacobson ◽  
D. J. Eaglesham ◽  
M. Sosnowski ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Molecular Ion ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion

Reduction of boron transient enhanced diffusion in silicon by low-energy cluster ion implantation

1998 ◽  
Vol 54 (1-3) ◽  
pp. 80-83 ◽  
Author(s):  
Norihiro Shimada ◽  
Takaaki Aoki ◽  
Jiro Matsuo ◽  
Isao Yamada ◽  
Kenichi Goto ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Low Energy ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Cluster Ion ◽  
Energy Cluster

Fundamental Modeling of Transient Enhanced Diffusion through Extended Defect Evolution

1997 ◽  
Vol 469 ◽  
Author(s):  
A. H. Gencer ◽  
S. Chakravarthi ◽  
I. Clejan ◽  
S. T. Dunham
Keyword(s):  
Point Defect ◽  
Extended Defects ◽  
Dislocation Loops ◽  
Extended Defect ◽  
Enhanced Diffusion ◽  
Fundamental Model ◽  
Transient Enhanced Diffusion ◽  
Defect Evolution

Prediction of transient enhanced diffusion (TED) requires modeling of extended defects of many types, such as {311} defects, dislocation loops, boron-interstitial clusters, arsenic precipitates, etc. These extended defects not only form individually, but they also interact with each other through changes in point defect and solute concentrations. We have developed a fundamental model which can account for the behavior of a broad range of extended defects, as well as their interactions with each other. We have successfully applied and parameterized our model to a range of systems and conditions, some of which are presented in this paper.

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