Transient enhanced diffusion from decaborane molecular ion implantation

1998 ◽  
Vol 73 (14) ◽  
pp. 2015-2017 ◽  
Author(s):  
Aditya Agarwal ◽  
H.-J. Gossmann ◽  
D. C. Jacobson ◽  
D. J. Eaglesham ◽  
M. Sosnowski ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Molecular Ion ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion

Suppression of transient enhanced diffusion following in situ photoexcitation during boron ion implantation

1995 ◽  
Vol 67 (15) ◽  
pp. 2158-2160 ◽  
Author(s):  
J. Ravi ◽  
Yu. Erokhin ◽  
G. A. Rozgonyi ◽  
C. W. White
Keyword(s):  
Ion Implantation ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion

Transient enhanced diffusion of aluminum in SiC during high temperature ion implantation

1999 ◽  
Vol 86 (11) ◽  
pp. 6039-6042 ◽  
Author(s):  
I. O. Usov ◽  
A. A. Suvorova ◽  
V. V. Sokolov ◽  
Y. A. Kudryavtsev ◽  
A. V. Suvorov
Keyword(s):  
High Temperature ◽  
Ion Implantation ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion

Junction Depth Reduction of ion Implanted Boron in Silicon Through Fluorine ion Implantation

2000 ◽  
Vol 610 ◽  
Author(s):  
L. S. Robertson ◽  
P. N. Warnes ◽  
K. S. Jones ◽  
S. K. Earles ◽  
M. E. Law ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Secondary Ion Mass Spectrometry ◽  
Chemical Species ◽  
Amorphous Layer ◽  
Experimental Conditions ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Transmission Electron ◽  
Species Effect ◽  
Boron Diffusivity

AbstractThe interaction between boron and excess silicon interstitials caused by ion implantation hinders the formation of ultra-shallow, low resistivity junctions. Previous studies have shown that fluorine reduces boron transient enhanced diffusion, however it is unclear whether this observed phenomenon is due to the fluorine interacting with the boron atoms or silicon self-interstitials. Amorphization of a n-type Czochralski wafer was achieved with a 70 keV Si+ implantation at a dose of 1×1015/cm2. The Si+ implant produced a 1500Å deep amorphous layer, which was then implanted with 1.12 keV 1×1015/cm2 B+. The samples were then implanted with a dose of 2×1015/cm2F+ at various energies ranging from 2 keV to 36 keV. Ellipsometry measurements showed no increase in the amorphous layer thickness from either the boron or fluorine implants. The experimental conditions allowed the chemical species effect to be studied independent of the implant damage caused by the fluorine implant. Post-implantation anneals were performed in a tube furnace at 750° C. Secondary ion mass spectrometry was used to monitor the dopant diffusion after annealing. Transmission electron microscopy (TEM) was used to study the end-of-range defect evolution. The addition of fluorine reduces the boron transient enhanced diffusion for all fluorine energies. It was observed that both the magnitude of the boron diffusivity and the concentration gradient of the boron profile vary as a function of fluorine energy.

Reduction of boron transient enhanced diffusion in silicon by low-energy cluster ion implantation

1998 ◽  
Vol 54 (1-3) ◽  
pp. 80-83 ◽  
Author(s):  
Norihiro Shimada ◽  
Takaaki Aoki ◽  
Jiro Matsuo ◽  
Isao Yamada ◽  
Kenichi Goto ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Low Energy ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Cluster Ion ◽  
Energy Cluster

Species and dose dependence of ion implantation damage induced transient enhanced diffusion

1996 ◽  
Vol 79 (5) ◽  
pp. 2352-2363 ◽  
Author(s):  
H. S. Chao ◽  
S. W. Crowder ◽  
P. B. Griffin ◽  
J. D. Plummer
Keyword(s):  
Ion Implantation ◽  
Dose Dependence ◽  
Enhanced Diffusion ◽  
Implantation Damage ◽  
Transient Enhanced Diffusion

On the Influence of Boron-Interstitial Complexes on Transient Enhanced Diffusion

1999 ◽  
Vol 568 ◽  
Author(s):  
D. Stiebel ◽  
P. Pichler ◽  
H. Ryssel
Keyword(s):  
Ion Implantation ◽  
Experimental Results ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Dopant Atoms ◽  
Insight Into

ABSTRACTWe present new experimental results on the transient enhanced diffusion (TED) of boron after ion implantation. The investigation is focussed on effects that influence TED of shallow profiles in the absence of {311}-defects. Under these conditions, TED is mainly determined by the formation of boron-interstitial complexes (BIC). In addition, effects from the proximity of the surface become more and more important. Insight into the behavior of the dopant atoms is obtained by the comparison with simulations.

Transient Enhanced Diffusion for Ultra Low Energy Boron, Phosphorus, and Arsenic Implantation in Silicon

1998 ◽  
Vol 532 ◽  
Author(s):  
Ning Yu ◽  
Amitabh Jain ◽  
Doug Mercer
Keyword(s):  
Ion Implantation ◽  
Process Development ◽  
Cmos Technology ◽  
Low Energy ◽  
Defect Engineering ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Ultra Shallow Junctions ◽  
Technology Nodes ◽  
The Impact

ABSTRACTThe SIA roadmap predicts that junction depths of 500 angstroms are required for CMOS technology nodes of 0.18 μm or beyond by the year 2001. There are several ultra-shallow junction doping techniques currently under investigation. These include beamline ion implantation, plasma immersion ion implantation, and gas immersion laser doping. This study was based on beamline ion implantation of B, P, and As into single-crystal Si wafers at 0.25-2 keV to doses of (2- 10)×1014 at./cm2 with minimized beam energy contamination. Rapid thermal annealing was applied to the implanted wafers at 1000-1050 °C for 10-15 sec at ramp rates of 35- 50 °C/s in a N2 ambient. Transient enhanced diffusion was observed for all three implant species. For example, the depth of 0.25 keV B measured by SIMS increases from 250 to 520 A at a concentration level of l×1017 at./cm3 upon RTA. To minimize the TED, several schemes of defect engineering were applied prior to low energy implantation, including pre-amorphization and implantation of other species. A comparison of TED for different implantation conditions is given with the aim of process development for minimizing TED. The impact of energy contamination on ultra shallow junctions is also addressed.

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