Graphene Oxides Derivatives Prepared by an Electrochemical Approach: Correlation between Structure and Properties

Graphene oxide (GO) can be defined as a single monolayer of graphite with oxygen-containing functionalities such as epoxides, alcohols, and carboxylic acids. It is an interesting alternative to graphene for many applications due to its exceptional properties and feasibility of functionalization. In this study, electrochemically exfoliated graphene oxides (EGOs) with different amounts of surface groups, hence level of oxidation, were prepared by an electrochemical two-stage approach using graphite as raw material. A complete characterization of the EGOs was carried out in order to correlate their surface topography, interlayer spacing, defect content, and specific surface area (SSA) with their electrical, thermal, and mechanical properties. It has been found that the SSA has a direct relationship with the d-spacing. The EGOs electrical resistance decreases with increasing SSA while rises with increasing the D/G band intensity ratio in the Raman spectra, hence the defect content. Their thermal stability under both nitrogen and dry air atmospheres depends on both their oxidation level and defect content. Their macroscopic mechanical properties, namely the Young’s modulus and tensile strength, are influenced by the defect content, while no correlation was found with their SSA or interlayer spacing. Young moduli values as high as 54 GPa have been measured, which corroborates that the developed method preserves the integrity of the graphene flakes. Understanding the structure-property relationships in these materials is useful for the design of modified GOs with controllable morphologies and properties for a wide range of applications in electrical/electronic devices.

Progress in Bulk 4H SiC Crystal Growth for 150 mm Wafer Production

The thermoelastic stress, mechanical properties and defect content of bulk 4H n-type SiC crystals were investigated following adjustments to the PVT growth cell configuration that led to a 40% increase in growth rate. The resulting 150 mm wafers were compared with wafers produced from a control process in terms of wafer bow and warp, and dislocation density. Wafer shape was found to be comparable among the processes, indicating minimal impact on internal stress. Threading edge and threading screw dislocation densities increased and decreased, respectively, while basal plane dislocation densities were unaffected by the increase in growth rate. Loss of wafer planar stability was observed in certain cases. The elastic modulus was measured to be in the range of approximately 420-450 GPa for selected stable and unstable wafers, and was found to correspond to resistivity.

Can Appropriate Thermal Post-Treatment Make Defect Content in as-Built Electron Beam Additively Manufactured Alloy 718 Irrelevant?

Electron beam melting (EBM) is gaining rapid popularity for production of complex customized parts. For strategic applications involving materials like superalloys (e.g., Alloy 718), post-treatments including hot isostatic pressing (HIPing) to eliminate defects, and solutionizing and aging to achieve the desired phase constitution are often practiced. The present study specifically explores the ability of the combination of the above post-treatments to render the as-built defect content in EBM Alloy 718 irrelevant. Results show that HIPing can reduce defect content from as high as 17% in as-built samples (intentionally generated employing increased processing speeds in this illustrative proof-of-concept study) to <0.3%, with the small amount of remnant defects being mainly associated with oxide inclusions. The subsequent solution and aging treatments are also found to yield virtually identical phase distribution and hardness values in samples with vastly varying as-built defect contents. This can have considerable implications in contributing to minimizing elaborate process optimization efforts as well as slightly enhancing production speeds to promote industrialization of EBM for applications that demand the above post-treatments.

The shape evolution process of two-dimensional CdSe nanocrystals altered by seed concentration

The content of CdSe quantum dots induced a change of shape and lattice defect content in CdSe 2D nanocrystals.

Effect of Powder Type and Particles Size on Microstructure of Selective Laser Sintered Parts

The goal of this work was to investigate microstructure of the selective laser sintering (SLS) produced parts evaluating effect of powder type and fraction size. Studies have shown that printed samples of 316L and GP1 metal powders had a higher defect content compared to printed components from MP1 powder material. From scanning electron microscopy (SEM), it was found that iron-based printed parts melted worse than Co-Cr alloy components. Iron-based 316L and GP1 metal powders did not get enough energy from laser to perform a better microwelding between particles. Surface roughness Ra numerical values for samples 316L, GP1, MP1 respectively are Ra = 13.7 μm; 11.4 μm; 3.0 μm. Stainless steel powder material contains particles which size varies between 20 – 120 μm. The Co-Cr alloy and the maraging steel powder materials are made of 10 – 80 μm particles. The chemical and elemental composition of powder materials were examined using SEM-EDS technology.

Performance and Reliability Impacts of Extended Epitaxial Defects on 4H-SiC Power Devices

This work explores the effects of extended epitaxial defects on 4H-SiC power devices. Advanced defect mapping techniques were used on large quantities of power device wafers, and data was aggregated to correlate device electrical characteristics to defect content. 1200 V class Junction Barrier Schottky (JBS) diodes and MOSFETs were examined in this manner; higher voltage 3.3 kV class devices were examined as well. 3C inclusions and triangular defects, as well as heavily decorated substrate scratches, were found to be device killing defects. Other defects were found to have negligible impacts on device yield, even in the case of extremely high threading dislocation content. Defect impacts on device reliability was explored on MOS-gate structures, as well as long-term device blocking tests on both MOSFETs and JBS diodes. Devices that passed on-wafer electrical parametric tests were found to operate reliably in these tests, regardless of defect content.

Defect-Mediated Mechanics in Non-Stoichiometric Oxide Films

ABSTRACTChemomechanical coupling is a hallmark of the functional oxides that are used widely for energy conversion and storage applications including solid oxide fuel cells (SOFCs). These oxides rely on the presence of oxygen vacancies to enable important properties including ionic conductivity and gas exchange reactivity. However, such defects can also facilitate chemical expansion, or coupling between material volume and defect content. Such chemomechanical coupling is particularly relevant with the recent interest in thin film SOFCs which have the potential to decrease operating temperatures and enable portable applications. Thin films present a particular challenge for modelling, as experimental results indicate that film defect chemistry can differ significantly from bulk counterparts under the same experimental conditions. In this study, we explore the influence of point defects, including oxygen vacancies and cation dopants, on the elastic properties of a model material, PrxCe1-xO2-δ (PCO), using density functional theory (DFT + U) simulations. Previously, we showed that PCO films exhibit a decrease in Young’s elastic modulus E due to chemical expansion, but that this decrease can be larger than predicted based on bulk defect models. Here, we apply DFT + U to show that the biaxial elastic modulus of PCO decreases with increased oxygen vacancy content in both bulk and membrane forms. We consider the relative influences of oxygen vacancies and cation dopants on this trend, and highlight local structural changes in the presence of such defects. By relating our computational and experimental results, we evaluate the relative importance of increased oxygen vacancy content and finite thickness on the mechanical properties of oxides that are subject to chemical expansion under operando conditions. This work informs the design of μ-SOFCs, emphasizing the need to characterize thin films separately from bulk counterparts and demonstrating how functional defect content can influence development of stress and strain in devices by changing both material volume and elastic properties.

Correlations between Defect Content, Mechanical Properties and Fractographic Investigation of AlSi9Cu3(Fe) Alloy Reference Castings

High Pressure Die Casting (HPDC) is a foundry process particularly suitable for high production rates and applied in several industrial fields, but the amount of scrap, caused by defects or incomplete filling, is sometimes very high. Thus it is important to know which are the main causes of defect formation and their effects on microstructure and mechanical properties. This paper presents, within the European MUSIC project, the qualitative and quantitative results of a study conducted on AlSi9Cu3(Fe) alloy castings, referred to as Horse-shoe Reference Castings, specifically designed to generate different kinds of defects with different severity levels. The work focuses on the correlations obtained between the casting mechanical properties, their defect content in terms of porosity and oxide films and the process parameters adopted, mainly second phase plunger velocity and intensification pressure. The three point bending test was carried out on the four specimens obtained from the two appendixes of the casting. The fracture surfaces were studied by scanning electron microscopy (SEM) and optical microscopy (OM) highlighting that the defect content is clearly correlated to the mechanical properties and the process parameter settings.