Optoelectronic properties of hydrogenated amorphous silicon films grown using a modified pulsed plasma discharge

C. Mukherjee; C. Anandan; Tanay Seth; P. N. Dixit; R. Bhattacharyya

doi:10.1063/1.116457

Optoelectronic properties of hydrogenated amorphous silicon films grown using a modified pulsed plasma discharge

Applied Physics Letters ◽

10.1063/1.116457 ◽

1996 ◽

Vol 68 (2) ◽

pp. 194-196 ◽

Cited By ~ 19

Author(s):

C. Mukherjee ◽

C. Anandan ◽

Tanay Seth ◽

P. N. Dixit ◽

R. Bhattacharyya

Keyword(s):

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Plasma Discharge ◽

Optoelectronic Properties ◽

Silicon Films ◽

Pulsed Plasma ◽

Hydrogenated Amorphous

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The influence of deposition temperature and annealing temperature on the optoelectronic properties of hydrogenated amorphous silicon films

Journal of Applied Physics ◽

10.1063/1.347444 ◽

1991 ◽

Vol 69 (12) ◽

pp. 8320-8328 ◽

Cited By ~ 22

Author(s):

M. Kunst ◽

H.‐C. Neitzert

Keyword(s):

Amorphous Silicon ◽

Deposition Temperature ◽

Annealing Temperature ◽

Hydrogenated Amorphous Silicon ◽

Optoelectronic Properties ◽

Silicon Films ◽

Hydrogenated Amorphous

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A Simple Modification of the Magnetron Sputtering Method for Deposition of Hydrogenated Amorphous Silicon Films with Improved Optoelectronic Properties

Japanese Journal of Applied Physics ◽

10.1143/jjap.27.l1806 ◽

1988 ◽

Vol 27 (Part 2, No. 10) ◽

pp. L1806-L1808 ◽

Cited By ~ 2

Author(s):

A. K. Batabyal ◽

Ratnabali Banerjee ◽

A. K. Bandyopadhyay ◽

A. K. Barua

Keyword(s):

Magnetron Sputtering ◽

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Optoelectronic Properties ◽

Silicon Films ◽

Simple Modification ◽

Hydrogenated Amorphous

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Preparation of doped hydrogenated amorphous silicon films by microwave electron‐cyclotron‐resonance plasma discharge deposition

Journal of Applied Physics ◽

10.1063/1.338013 ◽

1987 ◽

Vol 61 (5) ◽

pp. 2084-2087 ◽

Cited By ~ 8

Author(s):

M. Kitagawa ◽

K. Setsune ◽

Y. Manabe ◽

T. Hirao

Keyword(s):

Amorphous Silicon ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Hydrogenated Amorphous Silicon ◽

Plasma Discharge ◽

Electron Cyclotron ◽

Silicon Films ◽

Electron Cyclotron Resonance Plasma ◽

Hydrogenated Amorphous ◽

Resonance Plasma

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Optoelectronic properties of hydrogenated amorphous silicon films deposited under negative substrate bias

Journal of Applied Physics ◽

10.1063/1.348605 ◽

1991 ◽

Vol 69 (5) ◽

pp. 2942-2950 ◽

Cited By ~ 44

Author(s):

P. Roca i Cabarrocas ◽

P. Morin ◽

V. Chu ◽

J. P. Conde ◽

J. Z. Liu ◽

...

Keyword(s):

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Optoelectronic Properties ◽

Silicon Films ◽

Substrate Bias ◽

Hydrogenated Amorphous ◽

Negative Substrate Bias

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Effect of pulse parameters on the deposition rate of hydrogenated amorphous silicon in a modified pulsed plasma discharge

Applied Physics Letters ◽

10.1063/1.114154 ◽

1995 ◽

Vol 66 (1) ◽

pp. 85-87 ◽

Cited By ~ 20

Author(s):

C. Anandan ◽

C. Mukherjee ◽

Tanay Seth ◽

P. N. Dixit ◽

R. Bhattacharyya

Keyword(s):

Amorphous Silicon ◽

Deposition Rate ◽

Hydrogenated Amorphous Silicon ◽

Plasma Discharge ◽

Pulsed Plasma ◽

Pulse Parameters ◽

Hydrogenated Amorphous

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Drive‐level capacitance profiling: Its application to determining gap state densities in hydrogenated amorphous silicon films

Applied Physics Letters ◽

10.1063/1.96129 ◽

1985 ◽

Vol 47 (4) ◽

pp. 412-414 ◽

Cited By ~ 144

Author(s):

C. E. Michelson ◽

A. V. Gelatos ◽

J. D. Cohen

Keyword(s):

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Drive Level ◽

Silicon Films ◽

State Densities ◽

Hydrogenated Amorphous ◽

Gap State

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Catalytic doping of phosphorus and boron atoms on hydrogenated amorphous silicon films

Japanese Journal of Applied Physics ◽

10.7567/jjap.55.04es05 ◽

2016 ◽

Vol 55 (4S) ◽

pp. 04ES05 ◽

Cited By ~ 11

Author(s):

Junichi Seto ◽

Keisuke Ohdaira ◽

Hideki Matsumura

Keyword(s):

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Silicon Films ◽

Hydrogenated Amorphous

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Hydrogenated Amorphous Silicon Films Prepared By rf Sputtering In He/H2

10.1117/12.938346 ◽

1986 ◽

Author(s):

M L. Albers ◽

H R. Shanks ◽

J Shinar

Keyword(s):

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Rf Sputtering ◽

Silicon Films ◽

Hydrogenated Amorphous

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Effects of silicon–hydrogen bond characteristics on the crystallization of hydrogenated amorphous silicon films prepared by plasma enhanced chemical vapor deposition

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.582049 ◽

1999 ◽

Vol 17 (6) ◽

pp. 3240-3245 ◽

Cited By ~ 21

Author(s):

Hae-Yeol Kim ◽

Jae-Beom Choi ◽

Jai-Young Lee

Keyword(s):

Hydrogen Bond ◽

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Hydrogenated Amorphous Silicon ◽

Chemical Vapor ◽

Silicon Films ◽

Hydrogenated Amorphous ◽

Bond Characteristics

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Conductance fluctuations in undoped intrinsic hydrogenated amorphous silicon films prepared using several deposition techniques

Journal of Non-Crystalline Solids ◽

10.1016/s0022-3093(99)00840-6 ◽

2000 ◽

Vol 266-269 ◽

pp. 304-308 ◽

Cited By ~ 2

Author(s):

Mehmet Güneş ◽

Robert E Johanson ◽

S.O Kasap

Keyword(s):

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Silicon Films ◽

Conductance Fluctuations ◽

Hydrogenated Amorphous ◽

Deposition Techniques

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