Effect of pulse parameters on the deposition rate of hydrogenated amorphous silicon in a modified pulsed plasma discharge

1995 ◽  
Vol 66 (1) ◽  
pp. 85-87 ◽  
Author(s):  
C. Anandan ◽  
C. Mukherjee ◽  
Tanay Seth ◽  
P. N. Dixit ◽  
R. Bhattacharyya
Keyword(s):  
Amorphous Silicon ◽  
Deposition Rate ◽  
Hydrogenated Amorphous Silicon ◽  
Plasma Discharge ◽  
Pulsed Plasma ◽  
Pulse Parameters ◽  
Hydrogenated Amorphous

Hydrogenated Amorphous Silicon Films Prepared by Mercury Sensitized Photochemical Vapor Deposition

1989 ◽  
Vol 149 ◽  
Author(s):  
Takaaki Kamimura ◽  
Hidetoshi Nozaki ◽  
Naoshi Sakuma ◽  
Mitsuo Nakajima ◽  
Hiroshi Ito
Keyword(s):  
Amorphous Silicon ◽  
Deposition Rate ◽  
Hydrogenated Amorphous Silicon ◽  
Gas Phase Reactions ◽  
Bond Density ◽  
Hydrogen Elimination ◽  
Photochemical Vapor Deposition ◽  
The Relationship ◽  
Hydrogenated Amorphous ◽  
Activation Type

ABSTRACTHydrogenated amorphous silicon (a-Si:H) films were prepared by mercury photosensitized decomposition of silane using a low-pressure mercury lamp. The deposition rate showed an activation type for substrate temperature (the activation energy: 0.13 eV), because the deposition rate would be determined by the rate of hydrogen elimination from the hydrogen saturated surface. Moreover, the relationship was found between the Si-H2 bond density in a- Si:H films and the gas phase reactions.

Effect of Annealing on Hydrogenated Amorphous Silicon Prepared at High Deposition Rate

1984 ◽  
Vol 23 (Part 2, No. 2) ◽  
pp. L81-L82 ◽  
Author(s):  
Toshihiko Hamasaki ◽  
Masato Ueda ◽  
Akiyoshi Chayahara ◽  
Masataka Hirose ◽  
Yukio Osaka
Keyword(s):  
Amorphous Silicon ◽  
Deposition Rate ◽  
Hydrogenated Amorphous Silicon ◽  
High Deposition Rate ◽  
Hydrogenated Amorphous
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