scholarly journals Ion implantation‐induced strong photosensitivity in high‐purity fused silica: Correlation of index changes with VUV color centers

1996 ◽  
Vol 68 (22) ◽  
pp. 3084-3086 ◽  
Author(s):  
M. Verhaegen ◽  
J. L. Brebner ◽  
L. B. Allard ◽  
J. Albert
Keyword(s):  
Ion Implantation ◽  
High Purity ◽  
Fused Silica ◽  
Color Centers ◽  
Index Changes

Engineering of nitrogen-vacancy color centers in high purity diamond by ion implantation and annealing

2011 ◽  
Vol 109 (8) ◽  
pp. 083530 ◽  
Author(s):  
J. O. Orwa ◽  
C. Santori ◽  
K. M. C. Fu ◽  
B. Gibson ◽  
D. Simpson ◽  
...  
Keyword(s):  
Ion Implantation ◽  
High Purity ◽  
Nitrogen Vacancy ◽  
Color Centers

Refractive-index changes in fused silica produced by heavy-ion implantation followed by photobleaching

1992 ◽  
Vol 17 (23) ◽  
pp. 1652 ◽  
Author(s):  
J. Albert ◽  
J. L. Brebner ◽  
R. Leonelli ◽  
B. Malo ◽  
K. O. Hill ◽  
...  
Keyword(s):  
Refractive Index ◽  
Ion Implantation ◽  
Heavy Ion ◽  
Fused Silica ◽  
Index Changes

Effects of ion implantation on the brazing properties of high purity alumina

2012 ◽  
Vol 206 (8-9) ◽  
pp. 2098-2104 ◽  
Author(s):  
Haiyang Xia ◽  
Aiping Wu ◽  
Yinglong Fan ◽  
Guisheng Zou ◽  
Jialie Ren
Keyword(s):  
Ion Implantation ◽  
High Purity

High-purity Zirconium under Niobium ion implantation: possibility of a dynamic precipitation?

2015 ◽  
Vol 95 (33) ◽  
pp. 3727-3744 ◽  
Author(s):  
A.K. Revelly ◽  
H.W. Becker ◽  
B. Vishwanadh ◽  
K.V. Mani Krishna ◽  
R. Tewari ◽  
...  
Keyword(s):  
Ion Implantation ◽  
High Purity ◽  
Dynamic Precipitation

Numerical study of silicon vacancy color centers in silicon carbide by helium ion implantation and subsequent annealing

2021 ◽  
Author(s):  
Yexin Fan ◽  
ying song ◽  
zongwei xu ◽  
jintong wu ◽  
rui zhu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ion Implantation ◽  
Color Center ◽  
Md Simulation ◽  
Subsequent Annealing ◽  
Atomic Scale ◽  
New Method ◽  
Color Centers ◽  
Silicon Vacancy ◽  
Helium Ion

Abstract Molecular dynamics (MD) simulation is adopted to discover the underlying mechanism of silicon vacancy color center and damage evolution during helium ions implanted four-hexagonal silicon carbide (4H-SiC) and subsequent annealing. The atomic-scale mechanism of silicon vacancy color centers in the process of He ion implantation into 4H-SiC can be described more accurately by incorporating electron stopping power for He ion implantation. We present a new method for calculating the silicon vacancy color center numerically, which considers the structure around the color center and makes the statistical results more accurate than the Wigner-Seitz defect analysis method. At the same time, photoluminescence (PL) spectroscopy of silicon vacancy color center under different helium ion doses is also characterized for validating the numerical analysis. The MD simulation of the optimal annealing temperature of silicon vacancy color center is predicted by the proposed new method.

Properties of Waveguide in Fused Silica and Quartz Crystal Fabricated by Cu2+ Ion Implantation

2017 ◽  
Vol 46 (4) ◽  
pp. 413001 ◽  
Author(s):  
刘秀红 LIU Xiu-hong ◽  
韩海燕 HAN Hai-yan ◽  
朱巧芬 ZHU Qiao-fen ◽  
黄艳宾 HUANG Yan-bin ◽  
董昭 DONG Zhao
Keyword(s):  
Ion Implantation ◽  
Quartz Crystal ◽  
Fused Silica
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