Engineering of nitrogen-vacancy color centers in high purity diamond by ion implantation and annealing

2011 ◽  
Vol 109 (8) ◽  
pp. 083530 ◽  
Author(s):  
J. O. Orwa ◽  
C. Santori ◽  
K. M. C. Fu ◽  
B. Gibson ◽  
D. Simpson ◽  
...  
Keyword(s):  
Ion Implantation ◽  
High Purity ◽  
Nitrogen Vacancy ◽  
Color Centers

On the efficiency of combined ion implantation for the creation of near-surface nitrogen-vacancy centers in diamond

2016 ◽  
Vol 213 (8) ◽  
pp. 2044-2050 ◽  
Author(s):  
Felipe Fávaro de Oliveira ◽  
Seyed Ali Momenzadeh ◽  
Denis Antonov ◽  
Helmut Fedder ◽  
Andrej Denisenko ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Nitrogen Vacancy ◽  
Near Surface ◽  
Nitrogen Vacancy Centers ◽  
The Creation

Effects of ion implantation on the brazing properties of high purity alumina

2012 ◽  
Vol 206 (8-9) ◽  
pp. 2098-2104 ◽  
Author(s):  
Haiyang Xia ◽  
Aiping Wu ◽  
Yinglong Fan ◽  
Guisheng Zou ◽  
Jialie Ren
Keyword(s):  
Ion Implantation ◽  
High Purity

Dependence of nitrogen-vacancy color centers on nitrogen concentration in synthetic diamond

2021 ◽  
Author(s):  
Yong Li ◽  
Xiaozhou Chen ◽  
Maowu Ran ◽  
Yanchao She ◽  
Zhengguo Xiao ◽  
...  
Keyword(s):  
Synthetic Diamond ◽  
Nitrogen Concentration ◽  
Nitrogen Vacancy ◽  
Color Centers

High-purity Zirconium under Niobium ion implantation: possibility of a dynamic precipitation?

2015 ◽  
Vol 95 (33) ◽  
pp. 3727-3744 ◽  
Author(s):  
A.K. Revelly ◽  
H.W. Becker ◽  
B. Vishwanadh ◽  
K.V. Mani Krishna ◽  
R. Tewari ◽  
...  
Keyword(s):  
Ion Implantation ◽  
High Purity ◽  
Dynamic Precipitation

Numerical study of silicon vacancy color centers in silicon carbide by helium ion implantation and subsequent annealing

2021 ◽  
Author(s):  
Yexin Fan ◽  
ying song ◽  
zongwei xu ◽  
jintong wu ◽  
rui zhu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ion Implantation ◽  
Color Center ◽  
Md Simulation ◽  
Subsequent Annealing ◽  
Atomic Scale ◽  
New Method ◽  
Color Centers ◽  
Silicon Vacancy ◽  
Helium Ion

Abstract Molecular dynamics (MD) simulation is adopted to discover the underlying mechanism of silicon vacancy color center and damage evolution during helium ions implanted four-hexagonal silicon carbide (4H-SiC) and subsequent annealing. The atomic-scale mechanism of silicon vacancy color centers in the process of He ion implantation into 4H-SiC can be described more accurately by incorporating electron stopping power for He ion implantation. We present a new method for calculating the silicon vacancy color center numerically, which considers the structure around the color center and makes the statistical results more accurate than the Wigner-Seitz defect analysis method. At the same time, photoluminescence (PL) spectroscopy of silicon vacancy color center under different helium ion doses is also characterized for validating the numerical analysis. The MD simulation of the optimal annealing temperature of silicon vacancy color center is predicted by the proposed new method.

scholarly journals Versatile multicolor nanodiamond probes for intracellular imaging and targeted labeling

2018 ◽  
Vol 6 (19) ◽  
pp. 3078-3084 ◽  
Author(s):  
Kerem Bray ◽  
Leonard Cheung ◽  
Khondker Rufaka Hossain ◽  
Igor Aharonovich ◽  
Stella M. Valenzuela ◽  
...  
Keyword(s):  
Nitrogen Vacancy ◽  
Color Centers ◽  
Intracellular Imaging ◽  
Bio Imaging

We report on the first demonstration of FNDs containing either silicon or nitrogen vacancy color centers for multi-color bio-imaging.

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