Refractive-index changes in fused silica produced by heavy-ion implantation followed by photobleaching

1992 ◽  
Vol 17 (23) ◽  
pp. 1652 ◽  
Author(s):  
J. Albert ◽  
J. L. Brebner ◽  
R. Leonelli ◽  
B. Malo ◽  
K. O. Hill ◽  
...  
1998 ◽  
Vol 540 ◽  
Author(s):  
A. Meldrum ◽  
L.A. Boatner ◽  
C.W. White ◽  
D.O. Henderson

AbstractRadiation effects in nonmetals have been studied for well over a century by geologists, mineralogists, physicists, and materials scientists. The present work focuses on recent results of investigations of the ion-beam-induced amorphization of the ABO4 compounds – including the orthophosphates (LnPO4; Ln = lanthanides) and the orthosilicates: zircon (ZrSiO4), hafnon (HfSiO4), and thorite (ThSiO4). In the case of the orthosilicates, heavy-ion irradiation at elevated temperatures causes the precipitation of a nanocrystalline metal oxide. Electron irradiation effects in these amorphized insulating ceramics can produce localized recrystallization on a nanometer scale. Similar electron irradiation techniques were used to nucleate monodispersed compound semiconductor nanocrystals formed by ion implantation of the elemental components into fused silica. Methods for the formation of novel structural relationships between embedded nanocrystals and their hosts have been developed and the results presented here demonstrate the general flexibility of ion implantation and irradiation techniques for producing unique near-surface microstructures in ion-implanted host materials.


2021 ◽  
Author(s):  
Lin Zhang ◽  
Jiamin Liu ◽  
Zhicheng Zhong ◽  
Hao Jiang ◽  
Honggang Gu ◽  
...  

2007 ◽  
Vol 75 (19) ◽  
Author(s):  
Yi Jiang ◽  
Ke-Ming Wang ◽  
Xue-Lin Wang ◽  
Feng Chen ◽  
Chuan-Lei Jia ◽  
...  

2003 ◽  
Author(s):  
Bradley F. Chmelka ◽  
Earl Danielson ◽  
Michael D. Wyrsta

2011 ◽  
Vol 25 (07) ◽  
pp. 497-507 ◽  
Author(s):  
M. J. KARIMI ◽  
A. KESHAVARZ ◽  
A. POOSTFORUSH

In this work, the optical absorption coefficients and the refractive index changes for the infinite and finite semi-parabolic quantum well are calculated. Numerical calculations are performed for typical GaAs / Al x Ga 1-x As semi-parabolic quantum well. The energy eigenvalues and eigenfunctions of these systems are calculated numerically. Optical properties are obtained using the compact density matrix approach. Results show that the energy eigenvalues and the matrix elements of the infinite and finite cases are different. The calculations reveal that the resonant peaks of the optical properties of the finite case occur at lower values of the incident photon energy with respect to the infinite case. Results indicate that the maximum value of the refractive index changes for the finite case are greater than that of the infinite case. Our calculations also show that in contrast to the infinite case, the resonant peak value of the total absorption coefficient in the case of the finite well is a non-monotonic function of the semi-parabolic confinement frequency.


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