Epitaxial layer thickness measurement by cross‐sectional atomic force microscopy

1996 ◽  
Vol 68 (23) ◽  
pp. 3353-3355 ◽  
Author(s):  
A. J. Howard ◽  
O. Blum ◽  
H. Chui ◽  
A. G. Baca ◽  
M. H. Crawford
Keyword(s):  
Atomic Force Microscopy ◽  
Layer Thickness ◽  
Epitaxial Layer ◽  
Thickness Measurement ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Atomic Force

Cross-sectional atomic force microscopy of ZnMgSSe- and BeMgZnSe-based laser diodes

1999 ◽  
Vol 75 (17) ◽  
pp. 2626-2628 ◽  
Author(s):  
A. V. Ankudinov ◽  
A. N. Titkov ◽  
T. V. Shubina ◽  
S. V. Ivanov ◽  
P. S. Kop’ev ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Laser Diodes ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Atomic Force

Cross-sectional observation of NaClO stain-etched Al0.5Ga0.5As/GaAs multilayer by atomic force microscopy

1995 ◽  
Vol 30 (3) ◽  
pp. 678-682 ◽  
Author(s):  
Hee Jeen Kim ◽  
Jae Sung Kim ◽  
Yong Kim ◽  
Moo Sung Kim ◽  
Suk-Ki Min
Keyword(s):  
Atomic Force Microscopy ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Atomic Force

Chemical and Structural Analysis of Nitridated Sapphire

1997 ◽  
Vol 482 ◽  
Author(s):  
Y. Cho ◽  
S. Rouvimov ◽  
Y. Kim ◽  
Z. Liliental-Weber ◽  
E. R. Weber
Keyword(s):  
Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Structural Analysis ◽  
Photoelectron Spectroscopy ◽  
High Resolution Electron Microscopy ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Sapphire Substrates ◽  
Atomic Force ◽  
Resolution Electron

AbstractThe incorporation of nitrogen into sapphire substrates during nitridation was studied by xray photoelectron spectroscopy (XPS). An increase in the intensity of nitrogen 1s peak in XPS was observed upon longer nitridation. The surface morphology of the substrates was characterized by atomic force microscopy (AFM). High resolution electron microscopy (HREM) was employed for structural analysis. The cross sectional TEM showed a thin layer of AlN buried between amorphous AlNxO1−x and sapphire. This is the first direct observation of AlN on sapphire. The TEM images show a deeper penetration depth of nitrogen into a longer nitridated sapphire.

Morphological Evolution with Layer Thickness in single crystal CeO2(110)/Si(100)

1994 ◽  
Vol 367 ◽  
Author(s):  
Tomoyasu Inoue ◽  
Yasuhiro Yamamoto ◽  
Masataka Satoh ◽  
Tetsu Ohsuna
Keyword(s):  
Layer Thickness ◽  
Morphological Evolution ◽  
High Energy ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Ion Channeling ◽  
Gable Roof ◽  
Atomic Force ◽  
Roof Shape ◽  
Sectional Shape

AbstractSurface morphology evolution of epitaxially grown CeO2(110) layers on Si(100) substrates is studied using atomic force microscopy (AFM) and reflection high energy electron diffraction (RHEED). The surface has a faceted structure; a stripe-appearance and triangular-shape in plan- and cross-sectional views, respectively. AFM measurements clarify that as the layer thickness increases, the cross-sectional shape changes from a gable roof shape toward trapezoidal, which is consistent with RHEED analyses. The width of the facet monotonically increases with the layer thickness, while its height saturates at ∼5 nm above 600 nm in thickness, which means that the surface approaches smooth morphology. Ion channeling analyses indicate that the thicker the layer, the better the crystalline quality at the surface.

Electron-Beam-Induced Carbon Contamination on Silicon: Characterization Using Raman Spectroscopy and Atomic Force Microscopy

2009 ◽  
Vol 16 (1) ◽  
pp. 13-20 ◽  
Author(s):  
Deborah Lau ◽  
Anthony E. Hughes ◽  
Tim H. Muster ◽  
Timothy J. Davis ◽  
A. Matthew Glenn
Keyword(s):  
Raman Spectroscopy ◽  
Atomic Force Microscopy ◽  
Electron Beam ◽  
Prolonged Exposure ◽  
Carbon Film ◽  
Field Enhancement ◽  
Film Deposition ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Atomic Force

AbstractElectron-beam-induced carbon film deposition has long been recognized as a side effect of scanning electron microscopy. To characterize the nature of this type of contamination, silicon wafers were subjected to prolonged exposure to 15 kV electron beam energy with a probe current of ∼300 pA. Using Raman spectroscopy, the deposited coating was identified as an amorphous carbon film with an estimated crystallite size of 125 Å. Using atomic force microscopy, the cross-sectional profile of the coating was found to be raised and textured, indicative of the beam raster pattern. A map of the Raman intensity across the coating showed increased intensity along the edges and at the corner of the film. The intensity profile was in excess of that which could be explained by thickness alone. The enhancement was found to correspond with a modeled local field enhancement induced by the coating boundary and showed that the deposited carbon coating generated a localized disturbance in the opto-electrical properties of the substrate, which is compared and contrasted with Raman edge enhancement that is produced by surface structure in silicon.

scholarly journals Thin Film Thickness and Grain Structure Determination of Ferroelectric SrBi2Ta2O9 with Cross-Sectional Atomic Force Microscopy

2002 ◽  
Vol 8 (S02) ◽  
pp. 774-775
Author(s):  
D.L. Pechkis ◽  
C. Caragianis-Broadbridge ◽  
A.H. Lehman ◽  
K. L. Klein ◽  
J.-P. Han ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Force Microscopy ◽  
Film Thickness ◽  
Structure Determination ◽  
Grain Structure ◽  
Thin Film Thickness ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Atomic Force
Sign in / Sign up

Export Citation Format

Share Document