Morphological Evolution with Layer Thickness in single crystal CeO2(110)/Si(100)

1994 ◽  
Vol 367 ◽  
Author(s):  
Tomoyasu Inoue ◽  
Yasuhiro Yamamoto ◽  
Masataka Satoh ◽  
Tetsu Ohsuna
Keyword(s):  
Layer Thickness ◽  
Morphological Evolution ◽  
High Energy ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Ion Channeling ◽  
Gable Roof ◽  
Atomic Force ◽  
Roof Shape ◽  
Sectional Shape

AbstractSurface morphology evolution of epitaxially grown CeO2(110) layers on Si(100) substrates is studied using atomic force microscopy (AFM) and reflection high energy electron diffraction (RHEED). The surface has a faceted structure; a stripe-appearance and triangular-shape in plan- and cross-sectional views, respectively. AFM measurements clarify that as the layer thickness increases, the cross-sectional shape changes from a gable roof shape toward trapezoidal, which is consistent with RHEED analyses. The width of the facet monotonically increases with the layer thickness, while its height saturates at ∼5 nm above 600 nm in thickness, which means that the surface approaches smooth morphology. Ion channeling analyses indicate that the thicker the layer, the better the crystalline quality at the surface.

Epitaxial layer thickness measurement by cross‐sectional atomic force microscopy

1996 ◽  
Vol 68 (23) ◽  
pp. 3353-3355 ◽  
Author(s):  
A. J. Howard ◽  
O. Blum ◽  
H. Chui ◽  
A. G. Baca ◽  
M. H. Crawford
Keyword(s):  
Atomic Force Microscopy ◽  
Layer Thickness ◽  
Epitaxial Layer ◽  
Thickness Measurement ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Atomic Force

Temperature Dependent Quasi-Periodic Facetting of AlAs Grown by MBE on (100) GaAs Substrates

1993 ◽  
Vol 312 ◽  
Author(s):  
Richard Mirin ◽  
Mohan Krishnamurthy ◽  
James Ibbetson ◽  
Arthur Gossard ◽  
John English ◽  
...  
Keyword(s):  
Growth Conditions ◽  
High Energy ◽  
High Energy Electron ◽  
Temperature Dependent ◽  
Cross Sectional ◽  
Mbe Growth ◽  
Atomic Force ◽  
Gaas Substrates ◽  
Transmission Electron ◽  
Facet Formation

AbstractHigh temperature (≥ 650°C) MBE growth of AlAs and AlAs/GaAs superlattices on (100) GaAs is shown to lead to quasi-periodic facetting. We demonstrate that the facetting is only due to the AlAs layers, and growth of GaAs on top of the facets replanarizes the surface. We show that the roughness between the AlAs and GaAs layers increases with increasing number of periods in the superlattice. The roughness increases to form distinct facets, which rapidly grow at the expense of the (100) surface. Within a few periods of the initial facet formation, the (100) surface has disappeared and only the facet planes are visible in cross-sectional transmission electron micrographs. At this point, the reflection high-energy electron diffraction pattern is spotty, and the specular spot is a distinct chevron. We also show that the facetting becomes more pronounced as the substrate temperature is increased from 620°C to 710°C. Atomic force micrographs show that the valleys enclosed by the facets can be several microns long, but they may also be only several nanometers long, depending on the growth conditions.

Cross-sectional atomic force microscopy of ZnMgSSe- and BeMgZnSe-based laser diodes

1999 ◽  
Vol 75 (17) ◽  
pp. 2626-2628 ◽  
Author(s):  
A. V. Ankudinov ◽  
A. N. Titkov ◽  
T. V. Shubina ◽  
S. V. Ivanov ◽  
P. S. Kop’ev ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Laser Diodes ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Atomic Force

Cross-sectional observation of NaClO stain-etched Al0.5Ga0.5As/GaAs multilayer by atomic force microscopy

1995 ◽  
Vol 30 (3) ◽  
pp. 678-682 ◽  
Author(s):  
Hee Jeen Kim ◽  
Jae Sung Kim ◽  
Yong Kim ◽  
Moo Sung Kim ◽  
Suk-Ki Min
Keyword(s):  
Atomic Force Microscopy ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Atomic Force

Characterization of X-ray irradiated graphene oxide coatings using X-ray diffraction, X-ray photoelectron spectroscopy, and atomic force microscopy

2013 ◽  
Vol 28 (2) ◽  
pp. 68-71 ◽  
Author(s):  
Thomas N. Blanton ◽  
Debasis Majumdar
Keyword(s):  
Atomic Force Microscopy ◽  
Graphene Oxide ◽  
Photoelectron Spectroscopy ◽  
High Energy ◽  
X Ray Diffraction ◽  
Carbon Phase ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Before And After

In an effort to study an alternative approach to make graphene from graphene oxide (GO), exposure of GO to high-energy X-ray radiation has been performed. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM) have been used to characterize GO before and after irradiation. Results indicate that GO exposed to high-energy radiation is converted to an amorphous carbon phase that is conductive.

Direct Measurement of Ion Beam Induced, Nanoscale Roughening of GaN

2005 ◽  
Vol 864 ◽  
Author(s):  
Bentao Cui ◽  
P. I. Cohen ◽  
A. M. Dabiran
Keyword(s):  
Ion Beam ◽  
High Energy ◽  
Surface Relaxation ◽  
Surface Roughening ◽  
High Energy Electron ◽  
Force Microscopy ◽  
Atomic Force ◽  
Continuum Equation ◽  
Argon Ions ◽  
Nanoscale Patterns

AbatractThe formation of ion induced nanoscale patterns such as ripple, dots or pores can be described by a linear continuum equation consisting of a surface roughening term due to curvature-dependent sputtering or asymmetric attachment of vacancies, and a surface smoothing term due to thermal or ion-induced diffusion. By studying ion-induced dimple volume change using atomic force microscopy, we show a method to measure the ion-roughening coefficient. Using this method, we found the roughening coefficient í was 45 nm2/sec at 730K for initial ion etchings with 300 eV Argon ions. Cathodoluminescence measurements indicated Ga-vacancy formation during ion bombardment. The activation energy for surface relaxation after ion etching was about 0.12 eV as measured by reflection high energy electron diffraction.

Imaging Electron Transport across Grain Boundaries in an Integrated Electron and Atomic Force Microscopy Platform: Application to Polycrystalline Silicon Solar Cells

2009 ◽  
Vol 1153 ◽  
Author(s):  
Manuel J Romero ◽  
Fude Liu ◽  
Oliver Kunz ◽  
Johnson Wong ◽  
Chun-Sheng Jiang ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Solar Cells ◽  
Electron Transport ◽  
Grain Boundaries ◽  
Polycrystalline Silicon ◽  
High Energy ◽  
Dominant Factor ◽  
Force Microscopy ◽  
Atomic Force

AbstractWe have investigated the local electron transport in polycrystalline silicon (pc-Si) thin-films by atomic force microscopy (AFM)-based measurements of the electron-beam-induced current (EBIC). EVA solar cells are produced at UNSW by <i>EVAporation</i> of a-Si and subsequent <i>solid-phase crystallization</i>–a potentially cost-effective approach to the production of pc-Si photovoltaics. A fundamental understanding of the electron transport in these pc-Si thin films is of prime importance to address the factors limiting the efficiency of EVA solar cells. EBIC measurements performed in combination with an AFM integrated inside an electron microscope can resolve the electron transport across individual grain boundaries. AFM-EBIC reveals that most grain boundaries present a high energy barrier to the transport of electrons for both p-type and n-type EVA thin-films. Furthermore, for p-type EVA pc-Si, in contrast with n-type, charged grain boundaries are seen. Recombination at grain boundaries seems to be the dominant factor limiting the efficiency of these pc-Si solar cells.

Epitaxial BaTiO3 Thin Films on Different Substrates for Optical Waveguide Applications

1999 ◽  
Vol 597 ◽  
Author(s):  
M. Siegert ◽  
Judit G. Lisoni ◽  
C. H. Lei ◽  
A. Eckau ◽  
W. Zander ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Waveguides ◽  
Rutherford Backscattering Spectrometry ◽  
Optical Data ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Ion Channeling ◽  
Atomic Force ◽  
Transmission Electron

AbstractIn the process of developing thin film electro-optical waveguides we investigated the influence of different substrates on the optical and structural properties of epitaxial BaTiO3 thin films. These films are grown by on-axis pulsed laser deposition (PLD) on MgO(100), MgAl2O4(100), SrTiO3(100) and MgO buffered A12O3(1102) substrates. The waveguide losses and the refractive indices were measured with a prism coupling setup. The optical data are correlated to the results of Rutherford backscattering spectrometry/ion channeling (RBS/C). X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy (TEM). BaTiO3 films on MgO(100) substrates show planar waveguide losses of 3 dB/cm and ridge waveguide losses of 5 dB/cm at a wavelength of 633 nm.

scholarly journals All chemical YBa2Cu3O7 superconducting multilayers: Critical role of CeO2 cap layer flatness

2009 ◽  
Vol 24 (4) ◽  
pp. 1446-1455 ◽  
Author(s):  
M. Coll ◽  
J. Gàzquez ◽  
R. Huhne ◽  
B. Holzapfel ◽  
Y. Morilla ◽  
...  
Keyword(s):  
Critical Role ◽  
High Energy ◽  
Buffer Layers ◽  
Solution Deposition ◽  
Ybco Films ◽  
Force Microscopy ◽  
Atomic Force ◽  
Current Densities ◽  
Atomically Flat

New advances toward microstructural improvement of epitaxial CeO2 films grown by chemical solution deposition and their use as buffer layers for YBa2Cu3O7 (YBCO) films are presented. We demonstrate that the degree of epitaxy and the fraction of (001) atomically flat surface area are controlled by the incorporation of tetravalent (Zr4+) or trivalent (Gd3+) cations into the ceria lattice. The degree of epitaxy has been investigated by means of Rutherford backscattering spectroscopy-channeling and reflection high-energy electron diffraction, and a new methodology is also presented to quantify the fraction of (001) atomically flat area from atomic force microscopy images. Results are further correlated with the superconducting properties, microstructure, and texture of YBCO films grown by the trifluoroacetate route. A comparison with pulsed laser deposition and YBCO films grown on the same ceria layers is also presented. This growth procedure has allowed us to obtain all chemical multilayer films with controlled microstructure and critical current densities above 4 MA cm−2 at 77 K.

Sign in / Sign up

Export Citation Format

Share Document