Application of deep level transient spectroscopy to metal‐oxide‐semiconductor relaxation transients

1987 ◽  
Vol 62 (2) ◽  
pp. 576-581 ◽  
Author(s):  
N. O. Pearce ◽  
B. Hamilton ◽  
A. R. Peaker ◽  
R. A. Craven
Keyword(s):  
Metal Oxide ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Transient Spectroscopy

Near-interface Traps in n-type SiO2/SiC MOS Capacitors from Energy-resolved CCDLTS

2010 ◽  
Vol 1246 ◽  
Author(s):  
Alberto F Basile ◽  
Sarit Dhar ◽  
John Rozen ◽  
Xudong Chen ◽  
John Williams ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Electron Emission ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Traps ◽  
Emission Rates ◽  
Mos Capacitors ◽  
Transient Spectroscopy

AbstractSilicon Carbide (SiC) Metal-Oxide-Semiconductor (MOS) capacitors, having different nitridation times, were characterized by means of Constant Capacitance Deep Level Transient Spectroscopy (CCDLTS). Electron emission was investigated with respect to the temperature dependence of emission rates and the amplitude of the signal as a function of the filling voltage. The comparison between the emission activation energies of the dominant CCDLTS peaks and the filling voltages, led to the conclusion that the dominant trapping behavior originates in the Silicon-dioxide (SiO2) layer. Moreover, a model of electron capture via tunneling can explain the dependence of the CCDLTS signal on increasing filling voltage.

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