Normal incident InGaAs/GaAs multiple quantum well infrared detector using electron intersubband transitions

1995 ◽  
Vol 67 (18) ◽  
pp. 2600-2602 ◽  
Author(s):  
Gamani Karunasiri ◽  
Jin Suk Park ◽  
John Chen ◽  
Robert Shih ◽  
J. F. Scheihing ◽  
...  
Keyword(s):  
Quantum Well ◽  
Infrared Detector ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Intersubband Transitions

Electroabsorption spectroscopy of intersubband transitions in multiple-quantum-well superlattices

2000 ◽  
Vol 61 (16) ◽  
pp. 10972-10977 ◽  
Author(s):  
J. Oiknine-Schlesinger ◽  
M. Gerling ◽  
D. Gershoni ◽  
E. Ehrenfreund ◽  
D. Ritter
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Intersubband Transitions ◽  
Electroabsorption Spectroscopy

Intersubband Transitions in In0.07Ga0.93As/Al0.4Ga0.6As Multiple Quantum Wells

1994 ◽  
Vol 299 ◽  
Author(s):  
F. Szmulowicz ◽  
M. O. Manasreh ◽  
C. Kutsche ◽  
C. E. Stutz
Keyword(s):  
Energy Level ◽  
Quantum Well ◽  
Quantum Wells ◽  
Excited States ◽  
Fermi Energy ◽  
Multiple Quantum Well ◽  
Energy Separation ◽  
Multiple Quantum ◽  
Fermi Energy Level ◽  
Intersubband Transitions

AbstractIntersubband transitions in a series of well-doped ([Si] = 2.0×1018cm−3) In0.07Ga0.93As/Al0.4Ga0.6As multiple quantum well samples were studied as a function of the well width by using the optical absorption technique. A single intersubband transition is observed in samples in which the Fermi energy level is between the ground and the first excited states in the quantum well. On the other hand, two intersubband transitions were recorded in samples where the Fermi energy level lies between the first and the second excited states. These two intersubband transitions were attributed to ground-to-first excited states and first-to-second excited states transitions. The energy separation between the latter two intersubband transitions was found to increase as the well width is increased. The fact that two intersubband transitions were observed in certain samples may suggest that specially designed quantum wells can be used for two color long wavelength infrared detectors.

Multiple quantum well 10 μm GaAs/AlxGa1−xAs infrared detector with improved responsivity

1987 ◽  
Vol 50 (25) ◽  
pp. 1814-1816 ◽  
Author(s):  
K.‐K. Choi ◽  
B. F. Levine ◽  
C. G. Bethea ◽  
J. Walker ◽  
R. J. Malik
Keyword(s):  
Quantum Well ◽  
Infrared Detector ◽  
Multiple Quantum Well ◽  
Multiple Quantum

Temperature-Insensitive Intersubband-Transitions in InGaAs/AlAsSb Multiple Quantum Well Designed for Optical Communication Wavelength*

2001 ◽  
Vol 40 (Part 2, No. 6A) ◽  
pp. L558-L560 ◽  
Author(s):  
Arup Neogi ◽  
Haruhiko Yoshida ◽  
Teruo Mozume ◽  
Nikholai Georgiev ◽  
Osamu Wada
Keyword(s):  
Quantum Well ◽  
Optical Communication ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Intersubband Transitions

128X1 GaAs/AlGaAs multiple quantum well infrared detector array

1998 ◽  
Author(s):  
Mingfang Wan ◽  
Haijiang Ou ◽  
Xingquan Liu ◽  
Xiaoshuang Chen ◽  
Ning Li ◽  
...  
Keyword(s):  
Quantum Well ◽  
Infrared Detector ◽  
Multiple Quantum Well ◽  
Detector Array ◽  
Multiple Quantum ◽  
Infrared Detector Array

scholarly journals Infrared optical absorbance of intersubband transitions in GaN/AlGaN multiple quantum well structures

2003 ◽  
Vol 93 (12) ◽  
pp. 10140-10142 ◽  
Author(s):  
Qiaoying Zhou ◽  
Jiayu Chen ◽  
B. Pattada ◽  
M. O. Manasreh ◽  
Faxian Xiu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Intersubband Transitions ◽  
Quantum Well Structures ◽  
Optical Absorbance
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