Multiple quantum well 10 μm GaAs/AlxGa1−xAs infrared detector with improved responsivity

1987 ◽  
Vol 50 (25) ◽  
pp. 1814-1816 ◽  
Author(s):  
K.‐K. Choi ◽  
B. F. Levine ◽  
C. G. Bethea ◽  
J. Walker ◽  
R. J. Malik
Keyword(s):  
Quantum Well ◽  
Infrared Detector ◽  
Multiple Quantum Well ◽  
Multiple Quantum

128X1 GaAs/AlGaAs multiple quantum well infrared detector array

1998 ◽  
Author(s):  
Mingfang Wan ◽  
Haijiang Ou ◽  
Xingquan Liu ◽  
Xiaoshuang Chen ◽  
Ning Li ◽  
...  
Keyword(s):  
Quantum Well ◽  
Infrared Detector ◽  
Multiple Quantum Well ◽  
Detector Array ◽  
Multiple Quantum ◽  
Infrared Detector Array

Normal incident InGaAs/GaAs multiple quantum well infrared detector using electron intersubband transitions

1995 ◽  
Vol 67 (18) ◽  
pp. 2600-2602 ◽  
Author(s):  
Gamani Karunasiri ◽  
Jin Suk Park ◽  
John Chen ◽  
Robert Shih ◽  
J. F. Scheihing ◽  
...  
Keyword(s):  
Quantum Well ◽  
Infrared Detector ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Intersubband Transitions

Si1−xGex/Si multiple quantum well infrared detector

1991 ◽  
Vol 59 (20) ◽  
pp. 2588-2590 ◽  
Author(s):  
R. P. G. Karunasiri ◽  
J. S. Park ◽  
K. L. Wang
Keyword(s):  
Quantum Well ◽  
Infrared Detector ◽  
Multiple Quantum Well ◽  
Multiple Quantum

MBE and MOCVD growth of AlGaAsAlAsGaAs double barrier multiple quantum well infrared detector

1995 ◽  
Vol 35 (1-3) ◽  
pp. 176-179 ◽  
Author(s):  
T. Osotchan ◽  
V.W.L. Chin ◽  
T.L. Tansley ◽  
B.F. Usher ◽  
A. Clark ◽  
...  
Keyword(s):  
Quantum Well ◽  
Infrared Detector ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Double Barrier ◽  
Mocvd Growth

RESONANT TUNNELING STUDIES OF VARIABLY SPACED MULTIPLE QUANTUM WELL STRUCTURES IN THE AlGaAs SYSTEM

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-457-C5-461
Author(s):  
C. J. SUMMERS ◽  
K. F. BRENNAN ◽  
A. TORABI ◽  
H. M. HARRIS ◽  
J. COMAS
Keyword(s):  
Quantum Well ◽  
Resonant Tunneling ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures

Low-Temperature Operation of Green, Blue and UV InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

2003 ◽  
Vol 764 ◽  
Author(s):  
X. A. Cao ◽  
S. F. LeBoeuf ◽  
J. L. Garrett ◽  
A. Ebong ◽  
L. B. Rowland ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Light Output ◽  
Localized States ◽  
Multiple Quantum ◽  
Nonradiative Recombination ◽  
Light Emitting ◽  
Temperature Range ◽  
Green Leds

Absract:Temperature-dependent electroluminescence (EL) of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with peak emission energies ranging from 2.3 eV (green) to 3.3 eV (UV) has been studied over a wide temperature range (5-300 K). As the temperature is decreased from 300 K to 150 K, the EL intensity increases in all devices due to reduced nonradiative recombination and improved carrier confinement. However, LED operation at lower temperatures (150-5 K) is a strong function of In ratio in the active layer. For the green LEDs, emission intensity increases monotonically in the whole temperature range, while for the blue and UV LEDs, a remarkable decrease of the light output was observed, accompanied by a large redshift of the peak energy. The discrepancy can be attributed to various amounts of localization states caused by In composition fluctuation in the QW active regions. Based on a rate equation analysis, we find that the densities of the localized states in the green LEDs are more than two orders of magnitude higher than that in the UV LED. The large number of localized states in the green LEDs are crucial to maintain high-efficiency carrier capture at low temperatures.

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