scholarly journals Rapid dephasing related to intersubband transitions induced by exciton quantum beats observed by a pump-probe technique in a GaAs/AlAs multiple quantum well

2015 ◽  
Vol 91 (12) ◽  
Author(s):  
Osamu Kojima ◽  
Kenta Kojima ◽  
Takashi Kita ◽  
Kouichi Akahane
2000 ◽  
Vol 61 (16) ◽  
pp. 10972-10977 ◽  
Author(s):  
J. Oiknine-Schlesinger ◽  
M. Gerling ◽  
D. Gershoni ◽  
E. Ehrenfreund ◽  
D. Ritter

1994 ◽  
Vol 299 ◽  
Author(s):  
F. Szmulowicz ◽  
M. O. Manasreh ◽  
C. Kutsche ◽  
C. E. Stutz

AbstractIntersubband transitions in a series of well-doped ([Si] = 2.0×1018cm−3) In0.07Ga0.93As/Al0.4Ga0.6As multiple quantum well samples were studied as a function of the well width by using the optical absorption technique. A single intersubband transition is observed in samples in which the Fermi energy level is between the ground and the first excited states in the quantum well. On the other hand, two intersubband transitions were recorded in samples where the Fermi energy level lies between the first and the second excited states. These two intersubband transitions were attributed to ground-to-first excited states and first-to-second excited states transitions. The energy separation between the latter two intersubband transitions was found to increase as the well width is increased. The fact that two intersubband transitions were observed in certain samples may suggest that specially designed quantum wells can be used for two color long wavelength infrared detectors.


1993 ◽  
Vol 62 (11) ◽  
pp. 1253-1255 ◽  
Author(s):  
D. L. Green ◽  
J. A. Skidmore ◽  
D. G. Lishan ◽  
E. L. Hu ◽  
P. M. Petroff

2001 ◽  
Vol 40 (Part 2, No. 6A) ◽  
pp. L558-L560 ◽  
Author(s):  
Arup Neogi ◽  
Haruhiko Yoshida ◽  
Teruo Mozume ◽  
Nikholai Georgiev ◽  
Osamu Wada

1997 ◽  
Vol 9 (5) ◽  
pp. 642-644
Author(s):  
Jian-Jang Huang ◽  
Ding-Wei Huang ◽  
Chung-Yen Chao ◽  
Jiun-Haw Li ◽  
C.C. Yang ◽  
...  

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