128X1 GaAs/AlGaAs multiple quantum well infrared detector array

1998 ◽  
Author(s):  
Mingfang Wan ◽  
Haijiang Ou ◽  
Xingquan Liu ◽  
Xiaoshuang Chen ◽  
Ning Li ◽  
...  
Keyword(s):  
Quantum Well ◽  
Infrared Detector ◽  
Multiple Quantum Well ◽  
Detector Array ◽  
Multiple Quantum ◽  
Infrared Detector Array

Multiple quantum well 10 μm GaAs/AlxGa1−xAs infrared detector with improved responsivity

1987 ◽  
Vol 50 (25) ◽  
pp. 1814-1816 ◽  
Author(s):  
K.‐K. Choi ◽  
B. F. Levine ◽  
C. G. Bethea ◽  
J. Walker ◽  
R. J. Malik
Keyword(s):  
Quantum Well ◽  
Infrared Detector ◽  
Multiple Quantum Well ◽  
Multiple Quantum

Processing and characterization of a 128 x 128 GaAs/GaAlAs quantum well infrared detector array

1995 ◽  
Author(s):  
Shmuel I. Borenstain ◽  
Uriel Arad ◽  
S. Afanasyev ◽  
I. Luybina ◽  
A. Segal
Keyword(s):  
Quantum Well ◽  
Infrared Detector ◽  
Detector Array ◽  
Infrared Detector Array

Normal incident InGaAs/GaAs multiple quantum well infrared detector using electron intersubband transitions

1995 ◽  
Vol 67 (18) ◽  
pp. 2600-2602 ◽  
Author(s):  
Gamani Karunasiri ◽  
Jin Suk Park ◽  
John Chen ◽  
Robert Shih ◽  
J. F. Scheihing ◽  
...  
Keyword(s):  
Quantum Well ◽  
Infrared Detector ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Intersubband Transitions

GaAs/AlGaAs Multiquantum Well Infrared Detector Array with 6.0 μm Response Width

1994 ◽  
Vol 340 ◽  
Author(s):  
Jin-Min Li ◽  
Hai-Qun Zheng ◽  
Yi-Ping Zeng ◽  
Mei-Ying Kong
Keyword(s):  
Quantum Well ◽  
Dark Current ◽  
Infrared Detector ◽  
Detector Array ◽  
Quantum Well Structures ◽  
Detector Arrays ◽  
Periodic Grating ◽  
Current Densities ◽  
Infrared Detector Array ◽  
Doubly Periodic Grating

ABSTRACTlO×16 GaAs/AlGaAs quantum well infrared detector arrays with peak responsivity at 9.3μm have been achieved with front-side normal illumination based on a waveguide of doubly periodic grating coupler. The detector array with a wideband response from 4.2μm to 10.3μm is demonstrated by optimizing the quantum well structures and device processes. A peak detectivity D*λ =2.9×1010 cmHz1/2 /W and high a responsivity Rp=0.37A/W have been obtained at λp=9.3μm and T=77K. The dark current densities of the detectors in the array were smaller than 6.2×10−6 A/cm2 with the detectors biased (Vb=3.2V) for maximum detectivity.

Si1−xGex/Si multiple quantum well infrared detector

1991 ◽  
Vol 59 (20) ◽  
pp. 2588-2590 ◽  
Author(s):  
R. P. G. Karunasiri ◽  
J. S. Park ◽  
K. L. Wang
Keyword(s):  
Quantum Well ◽  
Infrared Detector ◽  
Multiple Quantum Well ◽  
Multiple Quantum

MBE and MOCVD growth of AlGaAsAlAsGaAs double barrier multiple quantum well infrared detector

1995 ◽  
Vol 35 (1-3) ◽  
pp. 176-179 ◽  
Author(s):  
T. Osotchan ◽  
V.W.L. Chin ◽  
T.L. Tansley ◽  
B.F. Usher ◽  
A. Clark ◽  
...  
Keyword(s):  
Quantum Well ◽  
Infrared Detector ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Double Barrier ◽  
Mocvd Growth
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