Microwave plasma source for high current ion beam neutralization

2000 ◽  
Vol 71 (2) ◽  
pp. 800-803 ◽  
Author(s):  
D. Korzec ◽  
A. Müller ◽  
J. Engemann
2005 ◽  
Vol 107 ◽  
pp. 21-24 ◽  
Author(s):  
M. Medhisuwakul ◽  
Thiraphat Vilaithong ◽  
Jürgen Engemann

A 13.56 MHz radio-frequency (rf) driven multicusp ion source has been constructed [1] to produce a high argon ion current density. Milliampere-range argon ion current can be extracted from the source. An in-waveguide microwave plasma source has been utilized as the ion beam neutralizer [2]. The neutralization source was placed 20 cm downstream from the extraction system. With the former extraction system, comprised of extraction electrodes and an Einzel lens, the electrons from the neutralizer were attracted to the high positive potential of the lens. Consequently, the potential of the lens drops and the beam is diverged. To suppress electrons from being accelerated to the Einzel lens a negatively biased electrode was placed before the last electrode, which is grounded, to produce a retarding electric field for electrons. The hole of the electrode was made small to make sure that the potential at the center is negative enough to suppress electrons. All simulations have been performed with the KOBRA3-INP simulation software. The results of the beam shape from the simulation will be presented.


2004 ◽  
Vol 75 (5) ◽  
pp. 1684-1686 ◽  
Author(s):  
M. Medhisuwakul ◽  
D. Boonyawan ◽  
T. Vilaithong ◽  
J. Engemann

1999 ◽  
Vol 14 (11) ◽  
pp. 4351-4357 ◽  
Author(s):  
Zoran Falkenstein ◽  
Kevin C. Walter ◽  
Michael A. Nastasi ◽  
Donald J. Rej ◽  
Nikolai V. Gavrilov

Results of ion implantation of nitrogen into electrodeposited hard chromium and pure aluminum by a high-dose ion-beam source are presented and compared to plasma-source ion implantation. The large-area, high current density ion-beam source can be characterized, with respect to surface modification use, by a uniform emitted dose rate in the range of 1016 to 5 × 1017 N cm−2 min−1 over an area of <100 cm2 and with acceleration energies of 10–50 keV. The implantation range and retained dose (measured using ion-beam analysis), the surface hardness, coefficient of friction, and the change in the wear coefficient (measured by nanohardness indentation and pin-on-disk wear testing) that were obtained with an applied dose rate of ∼1.7 × 1017 N cm−2 min−1 at 25 kV are given, and they are compared to results obtained with plasma-source ion implantation.


2006 ◽  
Vol 15 (3) ◽  
pp. 396-401 ◽  
Author(s):  
M Medhisuwakul ◽  
S Kytzia ◽  
J Engemann ◽  
T Vilaithong

2003 ◽  
Vol 26 (3) ◽  
pp. 285-295 ◽  
Author(s):  
J. Z. Gleizer ◽  
A. Krokhmal ◽  
Ya E. Krasik ◽  
J. Felsteiner

1977 ◽  
Vol 48 (5) ◽  
pp. 571-572 ◽  
Author(s):  
K. Yatsu ◽  
Y. Nozaki ◽  
S. Hagiwara ◽  
S. Miyoshi
Keyword(s):  
Ion Beam ◽  

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