Extraction of an ion beam from a diverter‐type plasma source

1977 ◽  
Vol 48 (5) ◽  
pp. 571-572 ◽  
Author(s):  
K. Yatsu ◽  
Y. Nozaki ◽  
S. Hagiwara ◽  
S. Miyoshi
Keyword(s):  
Ion Beam ◽  
Plasma Source

scholarly journals Ferroelectric Plasma Source for Heavy Ion Beam Charge Neutralization

2006 ◽  
Author(s):  
P.C. Efthimion ◽  
E.P. Gilson ◽  
L. Grisham ◽  
R.C. Davidson ◽  
S. Yu ◽  
...  
Keyword(s):  
Ion Beam ◽  
Plasma Source ◽  
Heavy Ion ◽  
Charge Neutralization ◽  
Heavy Ion Beam

scholarly journals Effect of permanent magnets on plasma confinement and ion beam properties in a double layer helicon plasma source

2019 ◽  
Vol 85 (3) ◽  
Author(s):  
Erik Varberg ◽  
Åshild Fredriksen
Keyword(s):  
Magnetic Field ◽  
Permanent Magnets ◽  
Ion Beam ◽  
Plasma Source ◽  
Diffusion Chamber ◽  
Plasma Potential ◽  
Field Energy ◽  
Plasma Confinement ◽  
Plasma Device ◽  
Field Lines

The work described in this article was carried out to investigate how permanent magnets (PM) affect the plasma confinement and ion beam properties in an inductively coupled plasma which expands from a helicon source. The cylindrical plasma device Njord has a 13 cm long and 20 cm wide stainless steel port connecting the source chamber and the diffusion chamber. The source chamber has an axial magnetic field produced by two coils, with magnetic field lines expanding into the diffusion chamber. Simulations have shown that the field lines leaving the edge of the source hit the port wall, causing a loss of electrons in this section. In the experiments performed in this work, PMs were added around the port walls near the exit of a plasma source and the effect was investigated experimentally by means of a retarding field energy analyser probe. The plasma potential, ion density and ion beam parameters were estimated, and the results with and without the PMs were compared. The results showed that the plasma density in the centre can in some cases be doubled, and the density at the edges of the plasma increased significantly with PMs in place. Although the plasma potential was slightly affected, and the beam velocity dropped by ${\sim}$ 10 %, the ion beam flux increased by a factor of 1.5.

Development of a compact permanent magnet helicon plasma source for ion beam bioengineering

2011 ◽  
Vol 82 (10) ◽  
pp. 103503 ◽  
Author(s):  
P. Kerdtongmee ◽  
D. Srinoum ◽  
M. Nisoa
Keyword(s):  
Permanent Magnet ◽  
Ion Beam ◽  
Plasma Source ◽  
Helicon Plasma

A New Design and Computer Simulation of a 5-Electrode Ion Extraction/Focusing System

2005 ◽  
Vol 107 ◽  
pp. 21-24 ◽  
Author(s):  
M. Medhisuwakul ◽  
Thiraphat Vilaithong ◽  
Jürgen Engemann
Keyword(s):  
Microwave Plasma ◽  
Ion Beam ◽  
Plasma Source ◽  
Ion Source ◽  
Simulation Software ◽  
Ion Current ◽  
Extraction System ◽  
Beam Shape ◽  
Ion Extraction ◽  
Argon Ion

A 13.56 MHz radio-frequency (rf) driven multicusp ion source has been constructed [1] to produce a high argon ion current density. Milliampere-range argon ion current can be extracted from the source. An in-waveguide microwave plasma source has been utilized as the ion beam neutralizer [2]. The neutralization source was placed 20 cm downstream from the extraction system. With the former extraction system, comprised of extraction electrodes and an Einzel lens, the electrons from the neutralizer were attracted to the high positive potential of the lens. Consequently, the potential of the lens drops and the beam is diverged. To suppress electrons from being accelerated to the Einzel lens a negatively biased electrode was placed before the last electrode, which is grounded, to produce a retarding electric field for electrons. The hole of the electrode was made small to make sure that the potential at the center is negative enough to suppress electrons. All simulations have been performed with the KOBRA3-INP simulation software. The results of the beam shape from the simulation will be presented.

Development of a 1-m plasma source for heavy ion beam charge neutralization

2005 ◽  
Vol 544 (1-2) ◽  
pp. 378-382 ◽  
Author(s):  
Philip C. Efthimion ◽  
Erik P. Gilson ◽  
Larry Grisham ◽  
Ronald C. Davidson ◽  
Simon Yu ◽  
...  
Keyword(s):  
Ion Beam ◽  
Plasma Source ◽  
Heavy Ion ◽  
Charge Neutralization ◽  
Heavy Ion Beam

Carbon Nitride Formation by Plasma Assisted Ion Beam Deposition

1995 ◽  
Vol 396 ◽  
Author(s):  
G.S. Tompa ◽  
I.H. Murzin ◽  
S.I. Kim ◽  
Y.O Ahn ◽  
B. Gallois ◽  
...  
Keyword(s):  
Beam Energy ◽  
Carbon Nitride ◽  
Ion Beam ◽  
Nitrogen Concentration ◽  
Plasma Source ◽  
Diagnostic Techniques ◽  
Rf Plasma ◽  
Ion Beam Deposition ◽  
Optical And Mechanical Properties ◽  
Beam Deposition

AbstractTheoretical works have indicated that carbon nitride, in a β-C4N4 phase, would have optical and mechanical properties comparable to or exceeding those of diamond. In this effort, the formation of carbon nitride thin films was investigated using a Plasma Assisted Ion Beam Deposition (PAIBD). In this technique, a C- ion beam combined with a N2 or NH3 RF plasma source is used to synthesize carbon nitride films. These films were investigated as a function of both C- ion beam energy and the power of the plasma source. The C- ion energy was found to be a key parameter in the formation of carbon nitride. The films were evaluated by a variety of diagnostic techniques including Raman, AES, XRD and FTIR. Analysis confirms high nitrogen concentration in the synthesized films and the major portion of carbon being single bonds in the sp3 bond configuration, which is a characteristic of the tetrahedral -C3N4 phase. Tribology tests confirmed that the friction coefficient and the wear rate are comparable to diamond. The results show that the higher C- ion beam energy (-150 eV) forms insulating films with the highest single bond percentages in the range studied. We believe beam energy control is critical to the types of bonds formed.

Preparation of DLC gradient biomaterials by means of plasma source ion implant-ion beam enhanced deposition

1999 ◽  
Vol 345 (1) ◽  
pp. 67-70 ◽  
Author(s):  
G.F Yin ◽  
J.M Luo ◽  
C.Q Zheng ◽  
H.H Tong ◽  
Y.F Huo ◽  
...  
Keyword(s):  
Ion Beam ◽  
Plasma Source

Materials Science Issues of Plasma Source Ion Implantation

1995 ◽  
Vol 396 ◽  
Author(s):  
M. Nastasi ◽  
A.A. Elmoursi ◽  
R.J. Faehl ◽  
A.H. Hamdi ◽  
I. Henins ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Materials Science ◽  
Ion Beam ◽  
Value Added ◽  
Plasma Source ◽  
Industrial Applications ◽  
Plasma Source Ion Implantation ◽  
Potential Applications ◽  
Surface Modification Techniques ◽  
Wear Coatings

AbstractIon beam processing, including ion implantation and ion beam assisted deposition (IBAD), are established surface modification techniques which have been used successfully to synthesize materials for a wide variety of tribological applications. In spite of the flexibility and promise of the technique, ion beam processing has been considered too expensive for mass production applications. However, an emerging technology, Plasma Source Ion Implantation (PSII), has the potential of overcoming these limitations to become an economically viable tool for mass industrial applications. In PSII, targets are placed directly in a plasma and then pulsed-biased to produce a non-line-of-sight process for intricate target geometries without complicated fixturing. If the bias is a relatively high negative potential (20-100kV) ion implantation will result. At lower voltages (50-1200V), deposition occurs. Potential applications for PSII are in low-value-added products such as tools used in manufacturing, orthopedic devices, and the production of wear coatings for hard disk media. This paper will focus on the technology and materials science associated with PSII.

Microwave plasma source for high current ion beam neutralization

2000 ◽  
Vol 71 (2) ◽  
pp. 800-803 ◽  
Author(s):  
D. Korzec ◽  
A. Müller ◽  
J. Engemann
Keyword(s):  
Microwave Plasma ◽  
Ion Beam ◽  
Plasma Source ◽  
High Current

Determination of refractive index and thickness of YbF3 thin films deposited at different bias voltages of APS ion source from spectrophotometric methods

2018 ◽  
Vol 7 (1-2) ◽  
pp. 33-37 ◽  
Author(s):  
Yinhua Zhang ◽  
Shengming Xiong ◽  
Wei Huang ◽  
Kepeng Zhang
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Bias Voltage ◽  
Dispersion Model ◽  
Ion Beam ◽  
Plasma Source ◽  
Ion Source ◽  
Monocrystalline Silicon ◽  
Silicon Substrates ◽  
Spectrophotometric Methods

AbstractYtterbium fluoride (YbF3) single thin films were prepared on sapphire and monocrystalline silicon substrates through conventional thermal evaporation and ion beam-assisted deposition (IAD), at bias voltages ranging from 50 to 160 V of the Leybold advanced plasma source (APS). By using the Cauchy dispersion model, the refractive index and thickness of the YbF3thin films were obtained by fitting the 400–2500 nm transmittance of the monolayer YbF3thin films on the sapphire substrate. At the same time, the refractive index and thickness of the YbF3thin films on the monocrystalline silicon substrates were also measured using the VASE ellipsometer at wavelength from 400 to 2200 nm. The results showed that the refractive index deviation of the YbF3thin films between the fitted values by the transmittance spectra and the measured values by the VASE ellipsometer was <0.02 and the relative deviation of the thickness was <1%. Furthermore, the refractive index of the YbF3thin films increased with increasing APS bias voltage. The conventional YbF3thin films and the IAD thin films deposited at low bias voltage revealed a negative inhomogeneity, and a higher bias voltage is beneficial for improving the homogeneity of YbF3thin films.

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