A large-area plasma source excited by a tunable surface wave cavity

1999 ◽  
Vol 70 (5) ◽  
pp. 2331-2337 ◽  
Author(s):  
T. J. Wu ◽  
C. S. Kou
Keyword(s):  
Surface Wave ◽  
Plasma Source ◽  
Large Area

Development of a large-area planar surface-wave plasma source with a cavity launcher driven by a 915 MHz UHF wave

2013 ◽  
Vol 22 (2) ◽  
pp. 025002 ◽  
Author(s):  
Xijiang Chang ◽  
Kazuki Kunii ◽  
Rongqing Liang ◽  
Masaaki Nagatsu
Keyword(s):  
Surface Wave ◽  
Plasma Source ◽  
Planar Surface ◽  
Large Area

A planar-type surface-wave plasma source with a subwavelength diffraction grating inclusion for large-area plasma applications

2009 ◽  
Vol 106 (1) ◽  
pp. 013314 ◽  
Author(s):  
Zhaoquan Chen ◽  
Minghai Liu ◽  
Liang Tang ◽  
Peng Hu ◽  
Xiwei Hu
Keyword(s):  
Surface Wave ◽  
Diffraction Grating ◽  
Plasma Source ◽  
Large Area ◽  
Plasma Applications

Deposition of diamond films at low pressure in a planar large-area microwave surface wave plasma source

2001 ◽  
Vol 19 (6) ◽  
pp. 2835 ◽  
Author(s):  
W. Y. Yeh ◽  
J. Hwang ◽  
T. J. Wu ◽  
W. J. Guan ◽  
C. S. Kou ◽  
...  
Keyword(s):  
Surface Wave ◽  
Diamond Films ◽  
Plasma Source ◽  
Low Pressure ◽  
Large Area

Pattern Writing by Implantation in a Large-Scale PSII System With Planar Inductively Coupled Plasma Source

2000 ◽  
Vol 624 ◽  
Author(s):  
Lingling Wu ◽  
Hongjun Gao ◽  
Dennis M. Manos
Keyword(s):  
Inductively Coupled Plasma ◽  
Large Scale ◽  
Lateral Diffusion ◽  
Plasma Source ◽  
Direct Writing ◽  
Large Area ◽  
Depth Profiles ◽  
Geometric Patterns ◽  
Planar Coil ◽  
Rf Antenna

ABSTRACTA large-scale plasma source immersion ion implantation (PSII) system with planar coil RFI plasma source has been used to study an inkless, deposition-free, mask-based surface conversion patterning as an alternative to direct writing techniques on large-area substrates by implantation. The apparatus has a 0.61 m ID and 0.51 m tall chamber, with a base pressure in the 10−8 Torr range, making it one of the largest PSII presently available. The system uses a 0.43 m ID planar rf antenna to produce dense plasma capable of large-area, uniform materials treatment. Metallic and semiconductor samples have been implanted through masks to produce small geometric patterns of interest for device manufacturing. Si gratings were also implanted to study application to smaller features. Samples are characterized by AES, TEM and variable-angle spectroscopic ellipsometry. Composition depth profiles obtained by AES and VASE are compared. Measured lateral and depth profiles are compared to the mask features to assess lateral diffusion, pattern transfer fidelity, and wall-effects. The paper also presents the results of MAGIC calculations of the flux and angle of ion trajectories through the boundary layer predicting the magnitude of flux as a function of 3-D location on objects in the expanding sheath

scholarly journals A Surface-Wave Plasma Source with Magnetic Multicusp Fields

1998 ◽  
Vol 118 (11) ◽  
pp. 1201-1208
Author(s):  
Mutumi Tuda ◽  
Kouichi Ono ◽  
Masaaki Tsuchihashi ◽  
Minoru Hanazaki ◽  
Toshio Komemura
Keyword(s):  
Surface Wave ◽  
Plasma Source

Low Inductance Antenna (LIA) plasma source and plasma-enhanced dual rotatable magnetron sputter assisted with LIA

2015 ◽  
Vol 2015 (1) ◽  
pp. 000757-000760
Author(s):  
Y. Takaya ◽  
Y. Tanioka ◽  
H. Yoshino ◽  
A. Osawa
Keyword(s):  
Inductively Coupled Plasma ◽  
Low Voltage ◽  
Polymer Surface ◽  
Plasma Source ◽  
Large Area ◽  
Plasma Damage ◽  
Inductively Coupled ◽  
Temperature Deposition ◽  
Magnetron Sputter ◽  
Plasma Profile

In recent years, both low plasma damage and low temperature deposition technic for polymer substrates (e.g. PCB, films and etc.) are often required. We have developed a plasma enhanced dual rotatable magnetron sputter source assisted with inductively coupled plasma (ICP) using low inductance antenna (LIA). LIA has same unique characteristics, a)low voltage high density plasma, b)well controllability of plasma profile to ensure uniformity over large area, c)ionization of sputtered particle and etc. when in being used as a plasma assistant, and besides, LIA can be used as a ICP source for polymer surface modification. We introduce a variety of the possibilities of whether this sputter source is usable for the process of the fabrication of PCB.

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