Multicusp sources for ion beam projection lithography

1998 ◽  
Vol 69 (2) ◽  
pp. 877-879 ◽  
Author(s):  
Y. Lee ◽  
R. A. Gough ◽  
W. B. Kunkel ◽  
K. N. Leung ◽  
J. Vujic ◽  
...  
Keyword(s):  
Ion Beam ◽  
Projection Lithography ◽  
Beam Projection

In-Plane Gravity Loading of a Circular Membrane

2000 ◽  
Vol 67 (4) ◽  
pp. 837-839 ◽  
Author(s):  
R. O. Tejeda ◽  
E. G. Lovell ◽  
R. L. Engelstad
Keyword(s):  
Displacement Field ◽  
Ion Beam ◽  
Stress And Strain ◽  
Circular Membrane ◽  
Next Generation ◽  
Projection Lithography ◽  
Beam Projection ◽  
Lithographic Masks

This paper develops the displacement field for a circular membrane which is statically loaded by gravity acting in its plane. Coupled to the displacements are the stress and strain distributions. The solution is applicable to the modeling of next generation lithographic masks, ion-beam projection lithography masks in particular. [S0021-8936(00)00803-5]

Stress relief structures for ion-beam projection lithography masks

1999 ◽  
Vol 46 (1-4) ◽  
pp. 481-484 ◽  
Author(s):  
R. Tejeda ◽  
R. Engelstad ◽  
E. Lovell ◽  
E. Haugeneder ◽  
H. Löschner
Keyword(s):  
Ion Beam ◽  
Stress Relief ◽  
Projection Lithography ◽  
Beam Projection

Simulation of latent image formation for ion beam projection lithography

2001 ◽  
Vol 57-58 ◽  
pp. 335-342 ◽  
Author(s):  
G. Mladenov ◽  
K. Vutova ◽  
I. Raptis ◽  
P. Argitis ◽  
I. Rangelow
Keyword(s):  
Ion Beam ◽  
Image Formation ◽  
Latent Image ◽  
Projection Lithography ◽  
Beam Projection

Development of data conversion system for electron beam projection lithography

2002 ◽  
Vol 20 (6) ◽  
pp. 2672 ◽  
Author(s):  
Kokoro Kato ◽  
Kuninori Nishizawa ◽  
Tamae Haruki ◽  
Tadao Inoue ◽  
Koichi Kamijo ◽  
...  
Keyword(s):  
Electron Beam ◽  
Data Conversion ◽  
Projection Lithography ◽  
Conversion System ◽  
Beam Projection

Characterization of CMOS programmable multi-beam blanking arrays as used for programmable multi-beam projection lithography and resistless nanopatterning

2011 ◽  
Vol 21 (4) ◽  
pp. 045038 ◽  
Author(s):  
Stefan Eder Kapl ◽  
Hans Loeschner ◽  
Walter Piller ◽  
Martin Witt ◽  
Wolfgang Pilz ◽  
...  
Keyword(s):  
Projection Lithography ◽  
Beam Projection

scholarly journals Beyond grayscale lithography: inherently three-dimensional patterning by Talbot effect

2019 ◽  
Vol 8 (3-4) ◽  
pp. 233-240
Author(s):  
Roberto Fallica
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Three Dimensional ◽  
Talbot Effect ◽  
Large Area ◽  
Projection Lithography ◽  
Main Technique ◽  
Direct Laser ◽  
The Cost ◽  
Diffraction Effects

Abstract There are a growing number of applications where three-dimensional patterning is needed for the fabrication of micro- and nanostructures. Thus far, grayscale lithography is the main technique for obtaining a thickness gradient in a resist material that is exploited for pattern transfer by anisotropic etch. However, truly three-dimensional structures can only be produced by unconventional lithography methods such as direct laser writing, focused ion beam electrodeposition, colloidal sphere lithography, and tilted multiple-pass projection lithography, but at the cost of remarkable complexity and lengthiness. In this work, the three-dimensional shape of light, which is formed by Talbot effect diffraction, was exploited to produce inherently three-dimensional patterns in a photosensitive polymer. Using light in the soft X-ray wavelength, periodic three-dimensional structures of lateral period 600 nm were obtained. The position at which the sample has to be located to be in the Fresnel regime was simulated using an analytical implementation of the Fresnel integrals approach. Exploiting the light shape forming in diffraction effects thus enables the patterning of high-resolution three-dimensional nanostructures over a large area and with a single exposure pass – which would be otherwise impossible with conventional lithographic methods.

ION BEAM LITHOGRAPHY AND NANOFABRICATION: A REVIEW

2005 ◽  
Vol 04 (03) ◽  
pp. 269-286 ◽  
Author(s):  
F. WATT ◽  
A. A. BETTIOL ◽  
J. A. VAN KAN ◽  
E. J. TEO ◽  
M. B. H. BREESE
Keyword(s):  
Mass Production ◽  
Large Scale ◽  
Focused Ion Beam ◽  
Extreme Ultraviolet ◽  
Ion Beam ◽  
Large Area ◽  
Near Surface ◽  
X Ray ◽  
Projection Lithography ◽  
New Generation

To overcome the diffraction constraints of traditional optical lithography, the next generation lithographies (NGLs) will utilize any one or more of EUV (extreme ultraviolet), X-ray, electron or ion beam technologies to produce sub-100 nm features. Perhaps the most under-developed and under-rated is the utilization of ions for lithographic purposes. All three ion beam techniques, FIB (Focused Ion Beam), Proton Beam Writing (p-beam writing) and Ion Projection Lithography (IPL) have now breached the technologically difficult 100 nm barrier, and are now capable of fabricating structures at the nanoscale. FIB, p-beam writing and IPL have the flexibility and potential to become leading contenders as NGLs. The three ion beam techniques have widely different attributes, and as such have their own strengths, niche areas and application areas. The physical principles underlying ion beam interactions with materials are described, together with a comparison with other lithographic techniques (electron beam writing and EUV/X-ray lithography). IPL follows the traditional lines of lithography, utilizing large area masks through which a pattern is replicated in resist material which can be used to modify the near-surface properties. In IPL, the complete absence of diffraction effects coupled with ability to tailor the depth of ion penetration to suit the resist thickness or the depth of modification are prime characteristics of this technique, as is the ability to pattern a large area in a single brief irradiation exposure without any wet processing steps. p-beam writing and FIB are direct write (maskless) processes, which for a long time have been considered too slow for mass production. However, these two techniques may have some distinct advantages when used in combination with nanoimprinting and pattern transfer. FIB can produce master stamps in any material, and p-beam writing is ideal for producing three-dimensional high-aspect ratio metallic stamps of precise geometry. The transfer of large scale patterns using nanoimprinting represents a technique of high potential for the mass production of a new generation of high area, high density, low dimensional structures. Finally a cross section of applications are chosen to demonstrate the potential of these new generation ion beam nanolithographies.

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