High quality 4H‐SiC epitaxial layers grown by chemical vapor deposition

1995 ◽  
Vol 66 (11) ◽  
pp. 1373-1375 ◽  
Author(s):  
O. Kordina ◽  
A. Henry ◽  
J. P. Bergman ◽  
N. T. Son ◽  
W. M. Chen ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Epitaxial Layers ◽  
High Quality

High quality Ge epitaxial layers on Si by ultrahigh vacuum chemical vapor deposition

2009 ◽  
Vol 517 (14) ◽  
pp. 3990-3994 ◽  
Author(s):  
Hyun-Woo Kim ◽  
Keun Wook Shin ◽  
Gun-Do Lee ◽  
Euijoon Yoon
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Epitaxial Layers ◽  
High Quality

RTP-CVD of Si Materials and Devices for ULSI Applications

1991 ◽  
Vol 220 ◽  
Author(s):  
D. L. Kwong ◽  
T. Y. Hsieh ◽  
K. H. Jung
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thermal Exposure ◽  
Epitaxial Layers ◽  
High Quality ◽  
Si Epitaxy ◽  
Optical Waveguiding

ABSTRACTRapid thermal processing chemical vapor deposition (RTP-CVD) has received considerable attention because of its ability to reduce many of the processing problems associated with thermal exposure in conventional chemical vapor deposition, while still retaining the ability to grow high quality epitaxial layers. In this paper, the principles of the RTP-CVD system are described, followed by results of experiments on in-situ cleaning, undoped Si epitaxy and in-situ doped Si epitaxy, and selective Si deposition using oxide masks. Our results show that RTP-CVD is capable of growing high quality, epitaxial layers with sharp, dopant transition profiles. Selective deposition was achieved without the use of HC1. We also studied the growth and characterization of GexSi1−x films for optical waveguiding.

High quality Si1−x−yGexCy epitaxial layers grown on (100) Si by rapid thermal chemical vapor deposition using methylsilane

1995 ◽  
Vol 67 (2) ◽  
pp. 259-261 ◽  
Author(s):  
J. Mi ◽  
P. Warren ◽  
P. Letourneau ◽  
M. Judelewicz ◽  
M. Gailhanou ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Epitaxial Layers ◽  
High Quality ◽  
Thermal Chemical Vapor Deposition

Low Temperature Preparation of High-Quality Pb(Zr,Ti)O3 Films by Metal Organic Chemical Vapor Deposition with High Reproducibility

2001 ◽  
Vol 688 ◽  
Author(s):  
Hiroshi Funakubo ◽  
Kuniharu Nagashima ◽  
Masanori Aratani ◽  
Kouji Tokita ◽  
Takahiro Oikawa ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Process Window ◽  
High Quality ◽  
Low Temperature Preparation

AbstractPb(Zr,Ti)O3 (PZT) is one of the most promising materials for ferroelectric random access memory (FeRAM) application. Among the various preparation methods, metalorganic chemical vapor deposition (MOCVD) has been recognized as a most important one to realize high density FeRAM because of its potential of high-step-coverage and large-area-uniformity of the film quality.In the present study, pulsed-MOCVD was developed in which a mixture of the source gases was pulsed introduced into reaction chamber with interval. By using this deposition technique, simultaneous improvements of the crystallinity, surface smoothness, and electrical property of the film have been reached by comparing to the conventional continuous gas-supplied MOCVD. Moreover, this film had larger remanent polarization (Pr) and lower leakage current density. This is owing to reevaporation of excess Pb element from the film and increase of migration on the surface of substrate during the interval time.This process is also very effective to decrease the deposition temperature of the film having high quality. In fact, the Pr and the leakage current density of polycrystalline Pb(Zr0.35Ti0.65)O3 film deposited at 415 °C were 41.4 μC/cm2 and on the order of 10−7 A/cm2 at 200 kV/cm. This Pr value was almost the same as that of the epitaxially grown film deposited at 415 °C with the same composition corrected for the orientation difference. This suggests that the polycrystalline PZT film prepared by pulsed-MOCVD had the epitaxial-grade ferroelectric properties even through the deposition temperature was as low as 415 °C. Moreover, large “process window” comparable to the process window at 580 °C, above 150 °C higher temperature and was widely used condition, was achieved even at 395°C by the optimization of the deposition condition.

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