TAMEK—Sources and techniques for high‐dose implantation, ion beam mixing, and ion‐beam assisted deposition of metal ions

1994 ◽  
Vol 65 (4) ◽  
pp. 1322-1324 ◽  
Author(s):  
A. M. Tolopa
Keyword(s):  
Metal Ions ◽  
Ion Beam ◽  
High Dose ◽  
Ion Beam Mixing ◽  
Ion Beam Assisted Deposition ◽  
High Dose Implantation

Formation of GaAs Ohmic Contacts by Using Ion Beam Mixing

1985 ◽  
Vol 54 ◽  
Author(s):  
S. Furukawa ◽  
T. Asano ◽  
T. Fukada ◽  
H. Ishiwara ◽  
K. Tsutsui
Keyword(s):  
Ohmic Contacts ◽  
Ion Beam ◽  
High Dose ◽  
Doped Semiconductors ◽  
Ion Beam Mixing ◽  
Mixing Effects ◽  
Annealing Step ◽  
Short Period ◽  
Constant Dose ◽  
Pt Films

ABSTRACTIon beam mixing effects on metals and highly doped semiconductors on GaAs for formation of ohmic contacts have been studied. In this study, we have principally selected Pt as metal and Ge as semiconductors electrodes for GaAs. In Pt/GaAs system, we observed alloying phenomena induced by Si+, Ar+, Ge+ ion mixing effects. The amount of GaAs reacted with Pt was found to be proportional to the mass of the incident ions for constant dose. Concernig with the formation of ohmic contacts, only in the case of Si implantation through Pt films, the conversion from Schottky- to ohmic-contact was observed due to ion beam mixing effects. In Ge/GaAs system, we observad the solid state epitaxy for implanted Ge layer by the first annealing at 450°C in the two step annealing, but no activation of the implanted species. For activating implanted species, the second annealing at 800°C was effective. Concerning with the formation of ohmic contacts, we observed that the ohmic I-V characteristics for Ge/GaAs system could be obtainable when the following conditions were satisfied at the same time: 1) high dose implantation of As+ into Ge layer, 2) low dose implantation of Si into Ge/GaAs boundary and 3) relatively short period annealing in the second annealing step. From such study, it is concluded that ion beam mixing in conjunction with rapid annealing would be most promising for forming stable and reproducible ohmic contacts.

SiC Precipitate Formation During High Dose Carbon Implantation Into Silicon

1996 ◽  
Vol 439 ◽  
Author(s):  
J. K. N. Lindner ◽  
K. Volz ◽  
B. Stritzker
Keyword(s):  
Density Distribution ◽  
Crystalline Silicon ◽  
Ion Beam ◽  
Host Lattice ◽  
High Dose ◽  
Carbon Ions ◽  
Precipitate Formation ◽  
Ion Beam Synthesis ◽  
High Dose Implantation ◽  
Precipitate Density

AbstractThe formation of SiC precipitates during the high-dose implantation of carbon ions into Si(100) is studied by means of TEM for implantation conditions, which are suitable for the ion beam synthesis of buried SiC layers in silicon. It is observed that in crystalline silicon nm-sized epitaxially oriented 3C-SiC precipitates are formed which are almost identical in size, nearly independent of the depth and dose (4 – 9 ×1017 C+/cm2). With increasing dose, it is mainly the density of precipitates which increases. Amorphization of the silicon host lattice leads to depth intervals with a strongly decreased density of oriented crystalline SiC precipitates. The irradiation induced formation of larger randomly oriented SiC crystallites is observed to occur in amorphized regions after prolonged implantation. Both the irradiation induced destruction and formation of SiC precipitates contribute to the generation of a nearly box-shaped precipitate density distribution at doses near the stoichiometry dose.

Change in elemental composition and structural-phase transformations in molybdenum with the high-dose implantation of metal ions

1996 ◽  
Vol 39 (9) ◽  
pp. 858-866
Author(s):  
A. N. Tyumentsev ◽  
A. D. Korotaev ◽  
O. V. Panin ◽  
A. F. Safarov ◽  
Yu. P. Pinzhin ◽  
...  
Keyword(s):  
Metal Ions ◽  
Phase Transformations ◽  
Elemental Composition ◽  
Structural Phase ◽  
High Dose ◽  
High Dose Implantation ◽  
Structural Phase Transformations

Ion Beam Synthesis By Tungsten Implantation Into 6h-Silicon Carbide At Elevated Temperatures

1996 ◽  
Vol 423 ◽  
Author(s):  
Hannes Weishart ◽  
W. Matz ◽  
W. Skorupa
Keyword(s):  
Silicon Carbide ◽  
Tungsten Carbide ◽  
Elevated Temperatures ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Bimodal Distribution ◽  
High Dose ◽  
Electrically Conductive ◽  
Implantation Temperature ◽  
High Dose Implantation

AbstractWe studied high dose implantation of tungsten into 6H-silicon carbide in order to synthesize an electrically conductive layer. Implantation was performed at 200 keV with a dose of 1×1017 W+cm−2 at temperatures of 90°C and 500°C. The samples were subsequently annealed either at 950°C or 1100°C. The influence of implantation and annealing temperatures on the reaction of W with SiC was investigated. Rutherford backscattering spectrometry (RBS), x-ray diffiraction (XRD) and Auger electron spectroscopy (AES) contributed to study the structure and composition of the implanted layer as well as the chemical state of the elements. The implantation temperature influences the depth distribution of C, Si and W as well as the damage production in SiC. The W depth profile exhibits a bimodal distribution for high temperature implantation and a customary gaussian distribution for room temperature implantation. Formation of tungsten carbide and silicide was observed in each sample already in the as-implanted state. Implantation at 90°C and annealing at 950°C lead to crystallization of W2C; tungsten silicide, however, remains amorphous. After implantation at 500°C and subsequent annealing at 11007deg;C crystalline W5Si3 forms, while tungsten carbide is amorphous.

scholarly journals Mixing of Al Into Uranium Silicides Reactor Fuels

1996 ◽  
Vol 439 ◽  
Author(s):  
Fu-Rong Ding ◽  
R. C. Birtcher ◽  
B. J. Kestel ◽  
P. M. Baldo
Keyword(s):  
Ion Beam ◽  
High Dose ◽  
Ion Beam Mixing ◽  
Dose Irradiation ◽  
Fuel Burn ◽  
Fission Gas ◽  
Mixing Rates ◽  
Radiation Induced ◽  
And Diffusion ◽  
Swelling Behaviors

AbstractSEM observations have shown that irradiation induced interaction of the aluminum cladding with uranium silicide reactor fuels strongly affects both fission gas and fuel swelling behaviors during fuel burn-up. We have used ion beam mixing, by 1.5 MeV Kr, to study this phenomena. RBS and the 27 A1( p, γ) 28 Si resonance nuclear reaction to was used to measure radiation induced mixing of Al into U3Si and U3Si2 after irradiation at 300γ;C.Initially U mixes into the Al layer and Al mixes into the U3 Si. At a low doses, the Al layer is converted into Ual4 type compound while near the interface the phase U(Al93 Si. 07 )3 grows. Under irradiation, Al diffuses out of the Ual4 surface layer, and the lower density ternary, which is stable under irradiation, is the final product. Al mixing into U3 Si2 is slower than in U3 Si, but after high dose irradiation the Al concentration extends much father into the bulk. In both systems Al mixing and diffusion is controlled by phase formation and growth. The Al mixing rates into the two alloys are similar to that of Al into pure uranium where similar aluminide phases are formed.

Ion beam assisted film growth by high dose implantation of carbon into a liquid medium

1996 ◽  
Vol 278 (1-2) ◽  
pp. 87-95
Author(s):  
R.R. Manory ◽  
R. Sahagian ◽  
S.N. Bunker ◽  
A.J. Armini
Keyword(s):  
Liquid Medium ◽  
Film Growth ◽  
Ion Beam ◽  
High Dose ◽  
High Dose Implantation

Silicon Nitride Layers on Tool Steel Produced by Ion Beam Mixing and Ion Beam Assisted Deposition

1989 ◽  
Vol 112 (2) ◽  
pp. 533-539 ◽  
Author(s):  
E. Hensel ◽  
H. Sommer ◽  
P. Knothe ◽  
E. Richter
Keyword(s):  
Silicon Nitride ◽  
Tool Steel ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
Ion Beam Assisted Deposition ◽  
Nitride Layers

Ion beam mixing of metal thin films with energetic metal ions

1996 ◽  
pp. 719-723
Author(s):  
F.J. Paoloni ◽  
P. J. Evans ◽  
K.M. Yu ◽  
Z. Wang ◽  
I.G. Brown
Keyword(s):  
Thin Films ◽  
Metal Ions ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
Metal Thin Films
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