SiC Precipitate Formation During High Dose Carbon Implantation Into Silicon

1996 ◽  
Vol 439 ◽  
Author(s):  
J. K. N. Lindner ◽  
K. Volz ◽  
B. Stritzker
Keyword(s):  
Density Distribution ◽  
Crystalline Silicon ◽  
Ion Beam ◽  
Host Lattice ◽  
High Dose ◽  
Carbon Ions ◽  
Precipitate Formation ◽  
Ion Beam Synthesis ◽  
High Dose Implantation ◽  
Precipitate Density

AbstractThe formation of SiC precipitates during the high-dose implantation of carbon ions into Si(100) is studied by means of TEM for implantation conditions, which are suitable for the ion beam synthesis of buried SiC layers in silicon. It is observed that in crystalline silicon nm-sized epitaxially oriented 3C-SiC precipitates are formed which are almost identical in size, nearly independent of the depth and dose (4 – 9 ×1017 C+/cm2). With increasing dose, it is mainly the density of precipitates which increases. Amorphization of the silicon host lattice leads to depth intervals with a strongly decreased density of oriented crystalline SiC precipitates. The irradiation induced formation of larger randomly oriented SiC crystallites is observed to occur in amorphized regions after prolonged implantation. Both the irradiation induced destruction and formation of SiC precipitates contribute to the generation of a nearly box-shaped precipitate density distribution at doses near the stoichiometry dose.

SiC Precipitate Formation During High Dose Carbon Implantation into Silicon

1996 ◽  
Vol 438 ◽  
Author(s):  
J. K. N. Lindner ◽  
K. Volz ◽  
B. Stritzker
Keyword(s):  
Density Distribution ◽  
Crystalline Silicon ◽  
Ion Beam ◽  
Host Lattice ◽  
High Dose ◽  
Carbon Ions ◽  
Precipitate Formation ◽  
Ion Beam Synthesis ◽  
High Dose Implantation ◽  
Precipitate Density

AbstractThe formation of SiC precipitates during the high-dose implantation of carbon ions into Si(100) is studied by means of TEM for implantation conditions, which are suitable for the ion beam synthesis of buried SiC layers in silicon. It is observed that in crystalline silicon nm-sized epitaxially oriented 3C-SiC precipitates are formed which are almost identical in size, nearly independent of the depth and dose (4 - 9 x 1017 C+/cm2 ). With increasing dose, it is mainly the density of precipitates which increases. Amorphization of the silicon host lattice leads to depth intervals with a strongly decreased density of oriented crystalline SiC precipitates. The irradiation induced formatLion of larger randomly oriented SiC crystallites is observed to occur in amorphized regions after prolonged implantation. Both the irradiation induced destruction and formation of SiC precipitates contribute to the generation of a nearly box-shaped precipitate density distribution at doses near the stoichiometry dose.

Formation of Buried Ternary Silicide Layers in Silicon by Ion Beam Synthesis (IBS)

1992 ◽  
Vol 279 ◽  
Author(s):  
D. Panknin ◽  
E. Wieser ◽  
W. Skorupa ◽  
G. Querner ◽  
H. Vöhse ◽  
...  
Keyword(s):  
Phase Composition ◽  
Depth Distribution ◽  
Ion Beam ◽  
High Dose ◽  
Intermediate Annealing ◽  
Layer System ◽  
Ion Beam Synthesis ◽  
Post Implantation ◽  
High Dose Implantation ◽  
Ternary Silicide

ABSTRACTA buried (Fe1−xCox) Si2 (x < 0.2) layer was formed by two step high dose implantation of Fe and Co into {100}-Si with as well as without intermediate annealing between the implantations. The suicide layer remains semiconducting if the temperature of the post implantation annealing is lower than 850°C. The depth distribution of Fe and Co, the phase composition as well as the microstructure of the layer system was investigated.

Ion Beam Synthesis of Silicon Carbide

2005 ◽  
Vol 107 ◽  
pp. 51-54 ◽  
Author(s):  
S. Intarasiri ◽  
Anders Hallén ◽  
A. Razpet ◽  
Somsorn Singkarat ◽  
G. Possnert
Keyword(s):  
Silicon Carbide ◽  
Silicon Substrate ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Ion Beam ◽  
Vacuum Furnace ◽  
Carbon Ions ◽  
Elastic Recoil ◽  
Near Surface ◽  
Ion Beam Synthesis

Formation and crystallization of a thin near-surface layer of silicon carbide on a silicon substrate, created by ion-beam synthesis (IBS), are discussed. 80 and 40 keV carbon ions were implanted into a (1 0 0) high-purity p-type silicon substrate at room temperature and 400 oC, respectively, using doses in excess of 1017 ions/cm2. Elastic recoil detection analysis (ERDA) technique, developed for routine atomic depth profiling at the Angstrom laboratory, Uppsala University, Sweden, was used to investigate the depth distributions of implanted-ions. Infrared transmittance measurement was used as an indication of SiC in the implanted Si substrate. For the samples implanted at high temperature, the results show the existence of a peak at 797 cm-1, indicating the presence of β-SiC, already directly formed during the implantation without postimplantation annealing. While for the samples implanted at room temperature, starting with the band of amorphous Si-C network, the crystalline SiC appears at the annealing temperature as low as 900 oC. In both cases, during further annealing in vacuum, the peak grows in height and narrows in width (according to the measured FWHM) with increasing annealing temperature, indicating a further growth of the SiC layer. However, for thermal annealing at 1000 oC in a vacuum furnace the SiC crystallization was not completed and crystal imperfection where still present. Complementary to IR, Raman scattering measurements were performed. Although no direct evidence of SiC vibrations were observed, the appearance and disappearance of both Si-Si and C-C related bands points out to the formation of silicon and carbon clusters in the implanted layer.

keV- and MeV- Ion Beam Synthesis of Buried SiC Layers in Silicon

1994 ◽  
Vol 354 ◽  
Author(s):  
J.K.N. Lindner ◽  
A. Frohnwieser ◽  
B. Rauschenbach ◽  
B. Stritzker
Keyword(s):  
Ion Implantation ◽  
Annealing Time ◽  
Annealing Temperature ◽  
Ion Beam ◽  
High Dose ◽  
Layer Formation ◽  
Substrate Orientation ◽  
Ion Beam Synthesis ◽  
Buried Layers ◽  
Precipitate Layer

AbstractHomogenous, epitaxial buried layers of 3C-SÍC have been formed in Si(100) and Si(lll) by ion beam synthesis (IBS) using 180 keV high dose C ion implantation. It is shown that an annealing temperature of 1250 °C and annealing times of 5 to 10 h are sufficient to achieve well-defined Si/SiC/Si layer systems with abrupt interfaces. The influence of dose, annealing time and temperature on the layer formation is studied. The favourable dose is observed to be dependent on the substrate orientation. IBS using 0.8 MeV C ions resulted in a buried SiC precipitate layer of variable composition.

Ion Beam Synthesis By Tungsten Implantation Into 6h-Silicon Carbide At Elevated Temperatures

1996 ◽  
Vol 423 ◽  
Author(s):  
Hannes Weishart ◽  
W. Matz ◽  
W. Skorupa
Keyword(s):  
Silicon Carbide ◽  
Tungsten Carbide ◽  
Elevated Temperatures ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Bimodal Distribution ◽  
High Dose ◽  
Electrically Conductive ◽  
Implantation Temperature ◽  
High Dose Implantation

AbstractWe studied high dose implantation of tungsten into 6H-silicon carbide in order to synthesize an electrically conductive layer. Implantation was performed at 200 keV with a dose of 1×1017 W+cm−2 at temperatures of 90°C and 500°C. The samples were subsequently annealed either at 950°C or 1100°C. The influence of implantation and annealing temperatures on the reaction of W with SiC was investigated. Rutherford backscattering spectrometry (RBS), x-ray diffiraction (XRD) and Auger electron spectroscopy (AES) contributed to study the structure and composition of the implanted layer as well as the chemical state of the elements. The implantation temperature influences the depth distribution of C, Si and W as well as the damage production in SiC. The W depth profile exhibits a bimodal distribution for high temperature implantation and a customary gaussian distribution for room temperature implantation. Formation of tungsten carbide and silicide was observed in each sample already in the as-implanted state. Implantation at 90°C and annealing at 950°C lead to crystallization of W2C; tungsten silicide, however, remains amorphous. After implantation at 500°C and subsequent annealing at 11007deg;C crystalline W5Si3 forms, while tungsten carbide is amorphous.

scholarly journals Ion-beam synthesis of InAs nanocrystals in crystalline silicon

2010 ◽  
Vol 74 (2) ◽  
pp. 252-255 ◽  
Author(s):  
F. F. Komarov ◽  
O. V. Mil’chanin ◽  
L. A. Vlasukova ◽  
W. Wesch ◽  
A. F. Komarov ◽  
...  
Keyword(s):  
Crystalline Silicon ◽  
Ion Beam ◽  
Ion Beam Synthesis

Ion beam assisted film growth by high dose implantation of carbon into a liquid medium

1996 ◽  
Vol 278 (1-2) ◽  
pp. 87-95
Author(s):  
R.R. Manory ◽  
R. Sahagian ◽  
S.N. Bunker ◽  
A.J. Armini
Keyword(s):  
Liquid Medium ◽  
Film Growth ◽  
Ion Beam ◽  
High Dose ◽  
High Dose Implantation

Formation of Crystalline SiC Buried Layer by High-Dose Implantation of MeV Carbon Ions at High Temperature

1993 ◽  
Vol 32 (Part 2, No. 9A) ◽  
pp. L1286-L1288 ◽  
Author(s):  
Akiyoshi Chayahara ◽  
Masato Kiuchi ◽  
Atsushi Kinomura ◽  
Yoshiaki Mokuno ◽  
Yuji Horino ◽  
...  
Keyword(s):  
High Temperature ◽  
High Dose ◽  
Carbon Ions ◽  
Buried Layer ◽  
High Dose Implantation
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