Formation of GaAs Ohmic Contacts by Using Ion Beam Mixing

1985 ◽  
Vol 54 ◽  
Author(s):  
S. Furukawa ◽  
T. Asano ◽  
T. Fukada ◽  
H. Ishiwara ◽  
K. Tsutsui
Keyword(s):  
Ohmic Contacts ◽  
Ion Beam ◽  
High Dose ◽  
Doped Semiconductors ◽  
Ion Beam Mixing ◽  
Mixing Effects ◽  
Annealing Step ◽  
Short Period ◽  
Constant Dose ◽  
Pt Films

ABSTRACTIon beam mixing effects on metals and highly doped semiconductors on GaAs for formation of ohmic contacts have been studied. In this study, we have principally selected Pt as metal and Ge as semiconductors electrodes for GaAs. In Pt/GaAs system, we observed alloying phenomena induced by Si+, Ar+, Ge+ ion mixing effects. The amount of GaAs reacted with Pt was found to be proportional to the mass of the incident ions for constant dose. Concernig with the formation of ohmic contacts, only in the case of Si implantation through Pt films, the conversion from Schottky- to ohmic-contact was observed due to ion beam mixing effects. In Ge/GaAs system, we observad the solid state epitaxy for implanted Ge layer by the first annealing at 450°C in the two step annealing, but no activation of the implanted species. For activating implanted species, the second annealing at 800°C was effective. Concerning with the formation of ohmic contacts, we observed that the ohmic I-V characteristics for Ge/GaAs system could be obtainable when the following conditions were satisfied at the same time: 1) high dose implantation of As+ into Ge layer, 2) low dose implantation of Si into Ge/GaAs boundary and 3) relatively short period annealing in the second annealing step. From such study, it is concluded that ion beam mixing in conjunction with rapid annealing would be most promising for forming stable and reproducible ohmic contacts.

Ion beam-mixing effects in nearly lattice-matched AlInN/GaN heterostructures by swift heavy ion irradiation

2012 ◽  
Vol 167 (7) ◽  
pp. 506-511 ◽  
Author(s):  
G. Devaraju ◽  
S. V.S. Nageswara Rao ◽  
N. Srinivasa Rao ◽  
V. Saikiran ◽  
T. K. Chan ◽  
...  
Keyword(s):  
Ion Irradiation ◽  
Ion Beam ◽  
Heavy Ion ◽  
Ion Beam Mixing ◽  
Swift Heavy Ion Irradiation ◽  
Heavy Ion Irradiation ◽  
Mixing Effects ◽  
Swift Heavy Ion ◽  
Lattice Matched

Diffusion of A Deposited GeSe Film in GaAs using Ion-Beam Mixing

1985 ◽  
Vol 45 ◽  
Author(s):  
N. J. Kepler ◽  
N. W. Cheung
Keyword(s):  
Integrated Circuits ◽  
Ohmic Contacts ◽  
Ion Beam ◽  
Threshold Temperature ◽  
Electrical Characteristics ◽  
Electrical Measurements ◽  
Furnace Annealing ◽  
Ion Beam Mixing ◽  
Heavily Doped ◽  
And Diffusion

ABSTRACTIon-beam mixing and rapid thermal annealing (RTA) techniques are used to form shallow and heavily-doped n+ layers in undoped GaAs. RTA reduces surface degradation and improves crystalline quality compared to lengthy thermal cycles, although furnace annealing producesidentical electrical characteristics. Ion-beam mixing has only a small effect on the diffusion of a deposited GeSe film, because the damage created by implantation is repaired during RTA before significant diffusion occurs. We define a threshold temperature representing the onset of significant electrical activation and/or diffusion, and propose a model relating the annealing, activation, and diffusion temperatures for the GeSe/GaAs system. RBS. SIMS, and electrical measurements show that extremely shallow layers with a sheet resistivity as low as 1480/El can be formed in GaAs by diffusion from a GeSe source. This technique has potential application to the formation of shallow ohmic contacts for GaAs integrated circuits.

Ion-beam mixing of Ni/Pd layers: I. Cascade mixing regime (low temperature)

1988 ◽  
Vol 3 (6) ◽  
pp. 1057-1062 ◽  
Author(s):  
U. G. Akano ◽  
D. A. Thompson ◽  
J. A. Davies ◽  
W. W. Smeltzer
Keyword(s):  
Thin Film ◽  
Ion Beam ◽  
Heavy Ion ◽  
Square Root ◽  
Ion Beam Mixing ◽  
Dose Comparison ◽  
Mixing Regime ◽  
Constant Dose ◽  
Constant Dose Rate

A tomic mixing resulting from heavy-ion bombardment of thin-film Ni/Pd bilayers and thin Pd markers sandwiched between Ni layers has been investigated. Mixing experiments were performed over a temperature range 40–473 K, using 120 keV Ar+ and 145 keV Kr+ ions at a constant dose rate of 5.5 × 1012 ions cm −2s−1 for doses up to 4 × 1016cm−2. The resulting interdiffusion was measured, in situ, using Rutherford backscattering with 2−2.8 MeV 4He+ ions. The results showed that, for both markers and bilayers, the amount of mixing is similar for both configurations and varies linearly with the square root of the ion dose. Comparison of the induced mixing per ion, following irradiation at 40 K, shows that the mixing is dependent on the damage energy FD deposited at the interface region. The mixing is essentially athermal.

Formation of ohmic contacts to n-GaAs by ion beam mixing and annealing

1988 ◽  
Vol 31 (4) ◽  
pp. 437-444 ◽  
Author(s):  
W.O. Barnard ◽  
J.B. Malherbe ◽  
B.M. Lacquet
Keyword(s):  
Ohmic Contacts ◽  
Ion Beam ◽  
Ion Beam Mixing

scholarly journals Mixing of Al Into Uranium Silicides Reactor Fuels

1996 ◽  
Vol 439 ◽  
Author(s):  
Fu-Rong Ding ◽  
R. C. Birtcher ◽  
B. J. Kestel ◽  
P. M. Baldo
Keyword(s):  
Ion Beam ◽  
High Dose ◽  
Ion Beam Mixing ◽  
Dose Irradiation ◽  
Fuel Burn ◽  
Fission Gas ◽  
Mixing Rates ◽  
Radiation Induced ◽  
And Diffusion ◽  
Swelling Behaviors

AbstractSEM observations have shown that irradiation induced interaction of the aluminum cladding with uranium silicide reactor fuels strongly affects both fission gas and fuel swelling behaviors during fuel burn-up. We have used ion beam mixing, by 1.5 MeV Kr, to study this phenomena. RBS and the 27 A1( p, γ) 28 Si resonance nuclear reaction to was used to measure radiation induced mixing of Al into U3Si and U3Si2 after irradiation at 300γ;C.Initially U mixes into the Al layer and Al mixes into the U3 Si. At a low doses, the Al layer is converted into Ual4 type compound while near the interface the phase U(Al93 Si. 07 )3 grows. Under irradiation, Al diffuses out of the Ual4 surface layer, and the lower density ternary, which is stable under irradiation, is the final product. Al mixing into U3 Si2 is slower than in U3 Si, but after high dose irradiation the Al concentration extends much father into the bulk. In both systems Al mixing and diffusion is controlled by phase formation and growth. The Al mixing rates into the two alloys are similar to that of Al into pure uranium where similar aluminide phases are formed.

Ion beam mixing effects on the high temperature oxidation resistance of iron and nickel

1985 ◽  
Vol 69 (2) ◽  
pp. 341-349 ◽  
Author(s):  
F. Giacomozzi ◽  
L. Guzman ◽  
A. Molinari ◽  
A. Tomasi ◽  
E. Voltolini ◽  
...  
Keyword(s):  
High Temperature ◽  
Oxidation Resistance ◽  
High Temperature Oxidation ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
Temperature Oxidation ◽  
Mixing Effects
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