High aspect ratio submicron silicon pillars fabricated by photoassisted electrochemical etching and oxidation

1995 ◽  
Vol 67 (13) ◽  
pp. 1877-1879 ◽  
Author(s):  
H. W. Lau ◽  
G. J. Parker ◽  
R. Greef ◽  
M. Hölling
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Electrochemical Etching ◽  
Silicon Pillars

Fabrication of ultra-high aspect ratio silicon nanopores by electrochemical etching

2014 ◽  
Vol 105 (12) ◽  
pp. 123111 ◽  
Author(s):  
Torsten Schmidt ◽  
Miao Zhang ◽  
Shun Yu ◽  
Jan Linnros
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Electrochemical Etching

High-aspect ratio micro- and nanostructures enabled by photo-electrochemical etching for sensing and energy harvesting applications

2018 ◽  
Vol 8 (5) ◽  
pp. 1171-1177 ◽  
Author(s):  
Badriyah Alhalaili ◽  
Daniel M. Dryden ◽  
Ruxandra Vidu ◽  
Soroush Ghandiparsi ◽  
Hilal Cansizoglu ◽  
...  
Keyword(s):  
Energy Harvesting ◽  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Electrochemical Etching

Fabrication of high aspect ratio silicon pillars of <10 nm diameter

1993 ◽  
Vol 63 (8) ◽  
pp. 1116-1118 ◽  
Author(s):  
Wei Chen ◽  
Haroon Ahmed
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Silicon Pillars

Sharp Needles: Fabrication of Tungsten Nanotips by AC Electrochemical Etching and Laser Enhanced Etching for Nanoprobing on Interconnects of Advanced Technology Nodes.

2013 ◽  
Vol 1553 ◽  
Author(s):  
M. K. Dawood ◽  
Z.H. Mai ◽  
T. H. Ng ◽  
H. Tan ◽  
P.K. Tan ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Laser Irradiation ◽  
High Aspect Ratio ◽  
Electrochemical Etching ◽  
Etching Process ◽  
Advanced Technology ◽  
Radius Of Curvature ◽  
20 Nm ◽  
Technology Nodes ◽  
Contact Size

ABSTRACTSharper nanotips are required for application in nanoprobing systems due to a shrinking contact size with each new transistor technology node. We describe a two-step etching process to fabricate W nanotips with controllable tip dimensions. The first process is an optimized AC electrochemical etching in KOH to fabricate nanotips with a radius of curvature (ROC) down to 90 nm. This was followed by a secondary nanotip sharpening process by laser irradiation in KOH. High aspect ratio nanotips with ROC close to 20 nm were obtained. Finally we demonstrate the application of the fabricated nanotips for nanoprobing on advanced technology SRAM devices.

scholarly journals Excellent potential of photo-electrochemical etching for fabricating high-aspect-ratio deep trenches in gallium nitride

2018 ◽  
Vol 11 (9) ◽  
pp. 091001 ◽  
Author(s):  
Fumimasa Horikiri ◽  
Hiroshi Ohta ◽  
Naomi Asai ◽  
Yoshinobu Narita ◽  
Takehiro Yoshida ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Electrochemical Etching
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