Fabrication of ultra-high aspect ratio silicon nanopores by electrochemical etching

2014 ◽  
Vol 105 (12) ◽  
pp. 123111 ◽  
Author(s):  
Torsten Schmidt ◽  
Miao Zhang ◽  
Shun Yu ◽  
Jan Linnros
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Electrochemical Etching

High-aspect ratio micro- and nanostructures enabled by photo-electrochemical etching for sensing and energy harvesting applications

2018 ◽  
Vol 8 (5) ◽  
pp. 1171-1177 ◽  
Author(s):  
Badriyah Alhalaili ◽  
Daniel M. Dryden ◽  
Ruxandra Vidu ◽  
Soroush Ghandiparsi ◽  
Hilal Cansizoglu ◽  
...  
Keyword(s):  
Energy Harvesting ◽  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Electrochemical Etching

Sharp Needles: Fabrication of Tungsten Nanotips by AC Electrochemical Etching and Laser Enhanced Etching for Nanoprobing on Interconnects of Advanced Technology Nodes.

2013 ◽  
Vol 1553 ◽  
Author(s):  
M. K. Dawood ◽  
Z.H. Mai ◽  
T. H. Ng ◽  
H. Tan ◽  
P.K. Tan ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Laser Irradiation ◽  
High Aspect Ratio ◽  
Electrochemical Etching ◽  
Etching Process ◽  
Advanced Technology ◽  
Radius Of Curvature ◽  
20 Nm ◽  
Technology Nodes ◽  
Contact Size

ABSTRACTSharper nanotips are required for application in nanoprobing systems due to a shrinking contact size with each new transistor technology node. We describe a two-step etching process to fabricate W nanotips with controllable tip dimensions. The first process is an optimized AC electrochemical etching in KOH to fabricate nanotips with a radius of curvature (ROC) down to 90 nm. This was followed by a secondary nanotip sharpening process by laser irradiation in KOH. High aspect ratio nanotips with ROC close to 20 nm were obtained. Finally we demonstrate the application of the fabricated nanotips for nanoprobing on advanced technology SRAM devices.

scholarly journals Excellent potential of photo-electrochemical etching for fabricating high-aspect-ratio deep trenches in gallium nitride

2018 ◽  
Vol 11 (9) ◽  
pp. 091001 ◽  
Author(s):  
Fumimasa Horikiri ◽  
Hiroshi Ohta ◽  
Naomi Asai ◽  
Yoshinobu Narita ◽  
Takehiro Yoshida ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Electrochemical Etching

scholarly journals Electrochemical nanostructuring of (111) oriented GaAs crystals: from porous structures to nanowires

2020 ◽  
Vol 11 ◽  
pp. 966-975
Author(s):  
Elena I Monaico ◽  
Eduard V Monaico ◽  
Veaceslav V Ursaki ◽  
Shashank Honnali ◽  
Vitalie Postolache ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Comparative Study ◽  
High Aspect Ratio ◽  
Electrochemical Etching ◽  
Aqueous Electrolytes ◽  
Porous Structures ◽  
Triangular Shape ◽  
Gaas Nanowires ◽  
One Step

A comparative study of the anodization processes occurring at the GaAs(111)A and GaAs(111)B surfaces exposed to electrochemical etching in neutral NaCl and acidic HNO3 aqueous electrolytes is performed in galvanostatic and potentiostatic anodization modes. Anodization in NaCl electrolytes was found to result in the formation of porous structures with porosity controlled either by current under the galvanostatic anodization, or by the potential under the potentiostatic anodization. Possibilities to produce multilayer porous structures are demonstrated. At the same time, one-step anodization in a HNO3 electrolyte is shown to lead to the formation of GaAs triangular shape nanowires with high aspect ratio (400 nm in diameter and 100 µm in length). The new data are compared to those previously obtained through anodizing GaAs(100) wafers in alkaline KOH electrolyte. An IR photodetector based on the GaAs nanowires is demonstrated.

Formation of High Aspect Ratio Macropore Array on N-Type Silicon

2013 ◽  
Vol 397-400 ◽  
pp. 47-51
Author(s):  
Guo Zheng Wang ◽  
Xiao Na Li ◽  
Feng Yuan Yu ◽  
Yao Zhang ◽  
Yong Zhao Liang ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Light Source ◽  
Anionic Surfactant ◽  
High Aspect Ratio ◽  
Response Curve ◽  
Electrochemical Etching ◽  
Spectral Response ◽  
Silicon Wafers ◽  
Type Silicon ◽  
Silicon Arrays

The fabrication of high aspect ratio macropore silicon arrays (MSA) on n-type silicon under optimum photo-electrochemical (PEC) etching (anodization) conditions was demonstrated. The depth of the MSA can reach 350 μm with an aspect ratio of more than 100. With the presence of AOS (a type of anionic surfactant) in the electrolyte, the pore walls solution is slowest, and is more suitable for the preparation of high aspect ratio n-type MSA. The etching voltage is critical for the formation of high aspect ratio MSA on n-type silicon. The relative spectral response curve was measured for silicon photo-electrochemical etching. An IR-LEDs (850 nm) array was proposed as light source for illumination of whole silicon wafers, which was proved available.

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