Ion sources for dry etching: Aspects of reactive ion beam etching for Si technology (invited) (abstract)a)

1992 ◽  
Vol 63 (4) ◽  
pp. 2367-2367
Author(s):  
H.‐C. Scheer
Keyword(s):  
Ion Beam ◽  
Dry Etching ◽  
Ion Sources ◽  
Ion Beam Etching ◽  
Reactive Ion Beam Etching

Dry Etching of GaN Using Reactive Ion Beam Etching and Chemically Assisted Reactive Ion Beam Etching

1997 ◽  
Vol 468 ◽  
Author(s):  
Jae-Won Lee ◽  
Hyong-Soo Park ◽  
Yong-Jo Park ◽  
Myong-Cheol Yoo ◽  
Tae-Il Kim ◽  
...  
Keyword(s):  
Room Temperature ◽  
Volume Fraction ◽  
Ion Beam ◽  
Etching Rate ◽  
Dry Etching ◽  
Ion Beam Etching ◽  
Etching Profile ◽  
Etching Parameters ◽  
Etching Selectivity ◽  
Reactive Ion Beam Etching

ABSTRACTDry etching characteristics of GaN using reactive ion beam etching (RIBE) were studied. Etching profile, etching rate and etching selectivity to a photoresist (PR) mask were investigated as a function of various etching parameters. Characteristics of chemically assisted reactive ion beam etching (CARIBE) and RIBE were compared at varied mixtures of CH4 and Cl2. A highly anisotropie etching profile with a smooth surface was obtained for tilted RIBE with Ch at room temperature. Etching selectivity to a PR was dramatically improved in RIBE and CARIBE when a volume fraction of CH4 to the mixture of CH4 and Ch was larger than 0.83.

Optimization of Electron Cyclotron Resonance Reactive Ion Beam Etching Reactors for Dry Etching of GaAs with Cl2

1997 ◽  
Vol 144 (9) ◽  
pp. 3191-3197 ◽  
Author(s):  
K. Nishioka ◽  
M. Sugiyama ◽  
M. Nezuka ◽  
Y Shimogaki ◽  
Y. Nakano ◽  
...  
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Ion Beam ◽  
Dry Etching ◽  
Electron Cyclotron ◽  
Ion Beam Etching ◽  
Reactive Ion Beam Etching

Reactive Ion Beam Etching Using a Selective Gallium Doping Method

1989 ◽  
Vol 28 (Part 2, No. 9) ◽  
pp. L1671-L1672
Author(s):  
Kyusaku Nishioka ◽  
Hiroaki Morimoto ◽  
Yoji Mashiko ◽  
Tadao Kato
Keyword(s):  
Ion Beam ◽  
Ion Beam Etching ◽  
Gallium Doping ◽  
Reactive Ion Beam Etching

Vapor deposition polymerization and reactive ion beam etching of poly(p-xylylene) films for waveguide applications

1999 ◽  
Vol 12 (2-3) ◽  
pp. 229-233 ◽  
Author(s):  
Bernard Ratier ◽  
Yong Seok Jeong ◽  
André Moliton ◽  
Pierre Audebert
Keyword(s):  
Vapor Deposition ◽  
Ion Beam ◽  
Ion Beam Etching ◽  
Reactive Ion Beam Etching
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