Ion sources for dry etching: Aspects of reactive ion beam etching for Si technology (invited)a)

1992 ◽  
Vol 63 (5) ◽  
pp. 3050-3057 ◽  
Author(s):  
H. ‐C. Scheer
1997 ◽  
Vol 468 ◽  
Author(s):  
Jae-Won Lee ◽  
Hyong-Soo Park ◽  
Yong-Jo Park ◽  
Myong-Cheol Yoo ◽  
Tae-Il Kim ◽  
...  

ABSTRACTDry etching characteristics of GaN using reactive ion beam etching (RIBE) were studied. Etching profile, etching rate and etching selectivity to a photoresist (PR) mask were investigated as a function of various etching parameters. Characteristics of chemically assisted reactive ion beam etching (CARIBE) and RIBE were compared at varied mixtures of CH4 and Cl2. A highly anisotropie etching profile with a smooth surface was obtained for tilted RIBE with Ch at room temperature. Etching selectivity to a PR was dramatically improved in RIBE and CARIBE when a volume fraction of CH4 to the mixture of CH4 and Ch was larger than 0.83.


1997 ◽  
Vol 144 (9) ◽  
pp. 3191-3197 ◽  
Author(s):  
K. Nishioka ◽  
M. Sugiyama ◽  
M. Nezuka ◽  
Y Shimogaki ◽  
Y. Nakano ◽  
...  

1989 ◽  
Vol 28 (Part 2, No. 9) ◽  
pp. L1671-L1672
Author(s):  
Kyusaku Nishioka ◽  
Hiroaki Morimoto ◽  
Yoji Mashiko ◽  
Tadao Kato

1999 ◽  
Vol 12 (2-3) ◽  
pp. 229-233 ◽  
Author(s):  
Bernard Ratier ◽  
Yong Seok Jeong ◽  
André Moliton ◽  
Pierre Audebert

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