Mechanisms for fluorocarbon reactive ion beam etching of SiO2by simultaneous Auger electron spectroscopy measurements

1985 ◽  
Vol 46 (11) ◽  
pp. 1103-1104 ◽  
Author(s):  
D. J. Thomson ◽  
C. R. Helms
Keyword(s):  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Ion Beam ◽  
Ion Beam Etching ◽  
Reactive Ion Beam Etching

Search for Ion Induced Mixing in Ceramic-Ceramic Systems

1995 ◽  
Vol 396 ◽  
Author(s):  
K.R. Padmanabhan
Keyword(s):  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Ion Beam ◽  
Epitaxial Films ◽  
Ion Beam Mixing ◽  
Ceramic Substrates ◽  
Ion Channeling ◽  
Ceramic Films ◽  
Dose Dependent

AbstractThin sputtered ceramic films deposited on ceramic substrates were subjected to either Kr+ or Xe+ ion bombardment for ion beam mixing studies in ceramic-ceramic systems. The amount of mixing if any was evaluated from Rutherford backscattering and Auger electron spectroscopy. In some instances ceramic films were deposited on epitaxial films or single crystal substrates for ion channeling analysis. No significant mixing was observed in any of the systems with ZrC. However, analysis of the interface in Si3N4/ SiC system indicates appreciable mixing and ion beam induced damage to the substrate. The mixing appears to be dose dependent for heavier ions.

scholarly journals The Effect of Stress in the Density of States of Amorphous Carbon Films Determined by X-Ray Excited Auger Electron Spectroscopy

2017 ◽  
Vol 2017 ◽  
pp. 1-5 ◽  
Author(s):  
P. F. Barbieri ◽  
F. C. Marques
Keyword(s):  
Auger Electron Spectroscopy ◽  
Density Of States ◽  
Amorphous Carbon ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Ion Beam ◽  
Carbon Films ◽  
Film Stress ◽  
Amorphous Carbon Films ◽  
X Ray

Amorphous carbon films can be prepared with a large variety of structure and have been used in a number of technological applications. Many of their properties have been determined, but very little is known concerning the effect of pressure on their properties. In this work we investigate the influence of pressure of graphite-like amorphous carbon films on the density of states (DOS) using X-ray Excited Auger Electron Spectroscopy (XAES) and the second derivate method of the XAES. The films were deposited by ion beam deposition and simultaneously bombarded with argon, which is responsible for the variation of the film stress, reaching extremely high values (4.5 GPa). Marked variations of the density of states of the pπ, pσ, sp, and s components were observed with increasing stress.

scholarly journals Silicon-Based Coatings on Niobium Metal

1989 ◽  
Vol 170 ◽  
Author(s):  
P. D. Stupik ◽  
T. R. Jervis ◽  
M. Nastasi ◽  
M. M. Donovan ◽  
A. R. Barron
Keyword(s):  
Auger Electron Spectroscopy ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Ion Beam ◽  
Rutherford Backscattering ◽  
X Ray ◽  
Silicon Based

AbstractSilicon coatings on niobium substrates were subjected to thermal, ion beam and laser mixing, and the effectiveness of the different methods for the synthesis of graded interfaces was compared. The resulting metal/silicon interfaces were characterized by X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and Rutherford backscattering (RBS).

Focused Ion Beam Grounding to Alleviate Sample Charging for Scanning Auger Electron Spectroscopy

2006 ◽  
Author(s):  
Carolyn F. H. Gondran ◽  
Emily Morales
Keyword(s):  
Electron Beam ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Contrast Analysis ◽  
Voltage Contrast

Abstract It is shown that a focused ion beam (FIB) grounding technique can be used to alleviate charge buildup on samples that would otherwise charge in the electron beam to the point where analysis by Auger electron spectroscopy (AES) was limited or impossible. FIB grounding alleviates the sample charging and permits AES analysis. The grounding technique is quick, easy and well understood as it has been used extensively for voltage-contrast analysis. The technique is shown to be useful for enabling analysis on electrically isolated conductive features as well as insulating samples.

Ion-beam-induced modification of Ni silicides investigated by Auger-electron spectroscopy

1983 ◽  
Vol 28 (8) ◽  
pp. 4277-4283 ◽  
Author(s):  
S. Valeri ◽  
U. del Pennino ◽  
P. Sassaroli ◽  
G. Ottaviani
Keyword(s):  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Ion Beam ◽  
Ni Silicides

Structural And Compositional Modifications of III–V Ternary and Quaternary Compounds Induced by Ion Bombardment

1991 ◽  
Vol 223 ◽  
Author(s):  
A. di Bona ◽  
A. Facchini ◽  
S. Valeri ◽  
G. Ottaviani ◽  
A. Piccirillo
Keyword(s):  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Ion Beam ◽  
Surface Damage ◽  
Subsurface Region ◽  
Quaternary Compounds ◽  
Outermost Surface ◽  
Etched Surface ◽  
Diffraction Effects

ABSTRACTThe effect of low energy (0.5 to 5 keV) Ar+ beams on the surface structure and composition of monocrystalline ternary In0.53Ga0.47As and quaternary In0.70Ga0.30As0.64P0.36 films epitaxially grown by MO-VPE on InP (100) substrate has been investigated. Quantitative Auger electron spectroscopy has been used with the elemental standard method taking into account the electron diffraction effects. For both semiconductors, the outermost surface layer has been found to be Ga and In enriched. In the subsurface region, the Ga enrichment is even larger, at the expense of As and In. In the quaternary film, P is depleted in the surface as well in the subsurface region. Angular Resolved Auger Electron Spectroscopy is applied to the structural study of the sputter-etched surface. The nature and spatial extension of the ion-induced surface damage have been investigated at different energies, and doses of the primary ion beam. Is has been found that the resistance to the amorphization is strongly enhanced in InGaAs with respect to GaAs.

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